Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UF4SC120023K4S

UF4SC120023K4S

1200V/23MOHM SIC STACKED FAST CA

UnitedSiC
574 -

RFQ

UF4SC120023K4S

Ficha técnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 53A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1430 pF @ 800 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C120150K3S

UF3C120150K3S

SICFET N-CH 1200V 18.4A TO247-3

UnitedSiC
2,449 -

RFQ

UF3C120150K3S

Ficha técnica

Tube - Obsolete N-Channel SiCFET (Cascode SiCJFET) 1200 V 18.4A (Tc) - - - - - - - - - Through Hole
UF3SC065030D8S

UF3SC065030D8S

SICFET N-CH 650V 18A 4DFN

UnitedSiC
2,985 -

RFQ

UF3SC065030D8S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel SiCFET (Cascode SiCJFET) 650 V 18A (Tc) 12V 42mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UF3SC065040D8S

UF3SC065040D8S

SICFET N-CH 650V 18A 4DFN

UnitedSiC
3,578 -

RFQ

UF3SC065040D8S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel SiCFET (Cascode SiCJFET) 650 V 18A (Tc) 12V 58mOhm @ 20A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075044B7S

UJ4C075044B7S

750V/44MOHM, N-OFF SIC CASCODE

UnitedSiC
198 -

RFQ

UJ4C075044B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 35.6A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 181W (Tc) -55°C ~ 175°C (TJ)
UJ4C075023B7S

UJ4C075023B7S

750V/23MOHM, N-OFF SIC CASCODE

UnitedSiC
200 -

RFQ

UJ4C075023B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 64A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 278W (Tc) -55°C ~ 175°C (TJ)
UJ4SC075018B7S

UJ4SC075018B7S

750V/18MOHM, N-OFF SIC STACK CAS

UnitedSiC
200 -

RFQ

UJ4SC075018B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 72A (Tc) 12V 23mOhm @ 50A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1414 pF @ 400 V - 259W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UJ4SC075011B7S

UJ4SC075011B7S

750V/11MOHM, N-OFF SIC STACK CAS

UnitedSiC
197 -

RFQ

UJ4SC075011B7S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel SiCFET (Silicon Carbide) 750 V 104A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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