Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GA50JT12-247

GA50JT12-247

TRANS SJT 1200V 100A TO247AB

GeneSiC Semiconductor
2,107 -

RFQ

GA50JT12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) - 25mOhm @ 50A - - - 7209 pF @ 800 V - 583W (Tc) 175°C (TJ) Through Hole
G3R350MT12D

G3R350MT12D

SIC MOSFET N-CH 11A TO247-3

GeneSiC Semiconductor
2,555 -

RFQ

G3R350MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 74W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R160MT12D

G3R160MT12D

SIC MOSFET N-CH 22A TO247-3

GeneSiC Semiconductor
1,787 -

RFQ

G3R160MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 15V 192mOhm @ 10A, 15V 2.69V @ 5mA 28 nC @ 15 V ±15V 730 pF @ 800 V - 123W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R75MT12D

G3R75MT12D

SIC MOSFET N-CH 41A TO247-3

GeneSiC Semiconductor
2,658 -

RFQ

G3R75MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc) -55°C ~ 175°C (TJ) Through Hole
G2R50MT33K

G2R50MT33K

3300V 50M TO-247-4 SIC MOSFET

GeneSiC Semiconductor
3,394 -

RFQ

G2R50MT33K

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 3300 V 63A (Tc) 20V 50mOhm @ 40A, 20V 3.5V @ 10mA (Typ) 340 nC @ 20 V +25V, -10V 7301 pF @ 1000 V Standard 536W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R60MT07D

G3R60MT07D

750V 60M TO-247-3 G3R SIC MOSFET

GeneSiC Semiconductor
2,704 -

RFQ

G3R60MT07D

Ficha técnica

Tube G3R™ Active - SiCFET (Silicon Carbide) 750 V - - - - - - - - - - Through Hole
G3R60MT07J

G3R60MT07J

750V 60M TO-263-7 G3R SIC MOSFET

GeneSiC Semiconductor
2,444 -

RFQ

G3R60MT07J

Ficha técnica

Tube G3R™ Active - SiCFET (Silicon Carbide) 750 V - - - - - - - - - - Surface Mount
G2R1000MT33J

G2R1000MT33J

SIC MOSFET N-CH 4A TO263-7

GeneSiC Semiconductor
3,983 -

RFQ

G2R1000MT33J

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 3300 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 3.5V @ 2mA 21 nC @ 20 V +20V, -5V 238 pF @ 1000 V - 74W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GA10JT12-263

GA10JT12-263

TRANS SJT 1200V 25A

GeneSiC Semiconductor
3,481 -

RFQ

GA10JT12-263

Ficha técnica

Tube - Active - SiC (Silicon Carbide Junction Transistor) 1200 V 25A (Tc) - 120mOhm @ 10A - - - 1403 pF @ 800 V - 170W (Tc) 175°C (TJ) Surface Mount
GA05JT03-46

GA05JT03-46

TRANS SJT 300V 9A TO46

GeneSiC Semiconductor
3,602 -

RFQ

GA05JT03-46

Ficha técnica

Bulk - Not For New Designs - SiC (Silicon Carbide Junction Transistor) 300 V 9A (Tc) - 240mOhm @ 5A - - - - - 20W (Tc) -55°C ~ 225°C (TJ) Through Hole
GA04JT17-247

GA04JT17-247

TRANS SJT 1700V 4A TO247AB

GeneSiC Semiconductor
3,634 -

RFQ

GA04JT17-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 4A (Tc) (95°C) - 480mOhm @ 4A - - - - - 106W (Tc) 175°C (TJ) Through Hole
GA16JT17-247

GA16JT17-247

TRANS SJT 1700V 16A TO247AB

GeneSiC Semiconductor
2,413 -

RFQ

GA16JT17-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 16A (Tc) (90°C) - 110mOhm @ 16A - - - - - 282W (Tc) 175°C (TJ) Through Hole
2N7635-GA

2N7635-GA

TRANS SJT 650V 4A TO257

GeneSiC Semiconductor
3,165 -

RFQ

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 4A (Tc) (165°C) - 415mOhm @ 4A - - - 324 pF @ 35 V - 47W (Tc) -55°C ~ 225°C (TJ) Through Hole
2N7636-GA

2N7636-GA

TRANS SJT 650V 4A TO276

GeneSiC Semiconductor
2,583 -

RFQ

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 4A (Tc) (165°C) - 415mOhm @ 4A - - - 324 pF @ 35 V - 125W (Tc) -55°C ~ 225°C (TJ) Surface Mount
2N7637-GA

2N7637-GA

TRANS SJT 650V 7A TO257

GeneSiC Semiconductor
3,422 -

RFQ

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 7A (Tc) (165°C) - 170mOhm @ 7A - - - 720 pF @ 35 V - 80W (Tc) -55°C ~ 225°C (TJ) Through Hole
2N7638-GA

2N7638-GA

TRANS SJT 650V 8A TO276

GeneSiC Semiconductor
3,359 -

RFQ

2N7638-GA

Ficha técnica

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 8A (Tc) (158°C) - 170mOhm @ 8A - - - 720 pF @ 35 V - 200W (Tc) -55°C ~ 225°C (TJ) Surface Mount
2N7639-GA

2N7639-GA

TRANS SJT 650V 15A TO257

GeneSiC Semiconductor
2,531 -

RFQ

2N7639-GA

Ficha técnica

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 15A (Tc) (155°C) - 105mOhm @ 15A - - - 1534 pF @ 35 V - 172W (Tc) -55°C ~ 225°C (TJ) Through Hole
2N7640-GA

2N7640-GA

TRANS SJT 650V 16A TO276

GeneSiC Semiconductor
2,578 -

RFQ

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 650 V 16A (Tc) (155°C) - 105mOhm @ 16A - - - 1534 pF @ 35 V - 330W (Tc) -55°C ~ 225°C (TJ) Surface Mount
GA03JT12-247

GA03JT12-247

TRANS SJT 1200V 3A TO247AB

GeneSiC Semiconductor
2,914 -

RFQ

GA03JT12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 3A (Tc) (95°C) - 460mOhm @ 3A - - - - - 15W (Tc) 175°C (TJ) Through Hole
GA06JT12-247

GA06JT12-247

TRANS SJT 1200V 6A TO247AB

GeneSiC Semiconductor
2,672 -

RFQ

GA06JT12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 6A (Tc) (90°C) - 220mOhm @ 6A - - - - - - 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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