Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT34N80B2C3G

APT34N80B2C3G

MOSFET N-CH 800V 34A T-MAX

Microchip Technology
2,210 -

RFQ

APT34N80B2C3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 145mOhm @ 22A, 10V 3.9V @ 2mA 355 nC @ 10 V ±20V 4510 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34F60B

APT34F60B

MOSFET N-CH 600V 36A TO247

Microchip Technology
3,422 -

RFQ

APT34F60B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34M60S

APT34M60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
2,876 -

RFQ

APT34M60S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5010LFLLG

APT5010LFLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology
3,811 -

RFQ

APT5010LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F120B

APT7F120B

MOSFET N-CH 1200V 7A TO247

Microchip Technology
3,635 -

RFQ

APT7F120B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.9Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120S

MSC040SMA120S

SICFET N-CH 1200V 64A TO268

Microchip Technology
2,862 -

RFQ

MSC040SMA120S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W -55°C ~ 175°C (TJ) Surface Mount
APT1201R2BLLG

APT1201R2BLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology
3,474 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.2Ohm @ 6A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 3100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14M120S

APT14M120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology
3,890 -

RFQ

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.1Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSC70SM120JCU3

MSC70SM120JCU3

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology
2,772 -

RFQ

MSC70SM120JCU3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSCSM120DAM31CTBL1NG

MSCSM120DAM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology
3,495 -

RFQ

MSCSM120DAM31CTBL1NG

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) Chassis Mount
APT10M19SVRG

APT10M19SVRG

MOSFET N-CH 100V 75A D3PAK

Microchip Technology
2,536 -

RFQ

APT10M19SVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 19mOhm @ 500mA, 10V 4V @ 1mA 300 nC @ 10 V - 6120 pF @ 25 V - - - Surface Mount
APT6025BVRG

APT6025BVRG

MOSFET N-CH 600V 25A TO247

Microchip Technology
3,243 -

RFQ

APT6025BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) - 250mOhm @ 500mA, 10V 4V @ 1mA 275 nC @ 10 V - 5160 pF @ 25 V - - - Through Hole
APT38F80B2

APT38F80B2

MOSFET N-CH 800V 41A T-MAX

Microchip Technology
2,446 -

RFQ

APT38F80B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 41A (Tc) 10V 240mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT10050LVRG

APT10050LVRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology
2,653 -

RFQ

APT10050LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
APT5010JVR

APT5010JVR

MOSFET N-CH 500V 44A ISOTOP

Microchip Technology
2,899 -

RFQ

APT5010JVR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Chassis Mount
MSC035SMA170S

MSC035SMA170S

MOSFET SIC 1700V 35 MOHM TO-268

Microchip Technology
2,622 -

RFQ

MSC035SMA170S

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1700 V 59A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC080SMA120JS15

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology
3,594 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
APT50M50JVFR

APT50M50JVFR

MOSFET N-CH 500V 77A ISOTOP

Microchip Technology
3,166 -

RFQ

APT50M50JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - Chassis Mount
APT37M100B2

APT37M100B2

MOSFET N-CH 1000V 37A T-MAX

Microchip Technology
2,943 -

RFQ

APT37M100B2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT47M60J

APT47M60J

MOSFET N-CH 600V 49A ISOTOP

Microchip Technology
3,336 -

RFQ

APT47M60J

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 10V 90mOhm @ 33A, 10V 5V @ 2.5mA 330 nC @ 10 V ±30V 13190 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
Total 697 Record«Prev1234...35Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario