Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP15N65M5

STP15N65M5

MOSFET N CH 650V 11A TO220

STMicroelectronics
1,000 -

RFQ

STP15N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 340mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 810 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
NVHL050N65S3HF

NVHL050N65S3HF

MOSFET N-CH 650V 58A TO247-3

onsemi
100 -

RFQ

NVHL050N65S3HF

Ficha técnica

Tube Automotive, AEC-Q101, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 119 nC @ 10 V ±30V 4880 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,553 -

RFQ

TK31Z60X,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
NTHLD040N65S3HF

NTHLD040N65S3HF

MOSFET N-CH 650V 65A TO247

onsemi
2,685 -

RFQ

NTHLD040N65S3HF

Ficha técnica

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 159 nC @ 10 V ±30V 5945 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW58N60DM2AG

STW58N60DM2AG

MOSFET N-CH 600V 50A TO247

STMicroelectronics
2,523 -

RFQ

STW58N60DM2AG

Ficha técnica

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 90 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N95K3

STP7N95K3

MOSFET N-CH 950V 7.2A TO220-3

STMicroelectronics
320 -

RFQ

STP7N95K3

Ficha técnica

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 7.2A (Tc) 10V 1.35Ohm @ 3.6A, 10V 5V @ 100µA 34 nC @ 10 V ±30V 1031 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW35N60C3FKSA1

SPW35N60C3FKSA1

MOSFET N-CH 650V 34.6A TO247-3

Infineon Technologies
3,156 -

RFQ

SPW35N60C3FKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R107M1HXKSA1

IMZA65R107M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
307 -

RFQ

Tube - Active - - - 20A (Tc) - - - - - - - - - -
APT34F60B

APT34F60B

MOSFET N-CH 600V 36A TO247

Microchip Technology
3,422 -

RFQ

APT34F60B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34M60S

APT34M60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
2,876 -

RFQ

APT34M60S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMZA65R072M1HXKSA1

IMZA65R072M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
288 -

RFQ

Tube - Active - - - 28A (Tc) - - - - - - - - - -
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,802 -

RFQ

TK62Z60X,S1F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
APT5010LFLLG

APT5010LFLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology
3,811 -

RFQ

APT5010LFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR64N50P

IXFR64N50P

MOSFET N-CH 500V 35A ISOPLUS247

IXYS
3,533 -

RFQ

IXFR64N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 95mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL033N65S3HF

NTHL033N65S3HF

MOSFET N-CH 650V 70A TO247-3

onsemi
3,103 -

RFQ

NTHL033N65S3HF

Ficha técnica

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 2.5mA 188 nC @ 10 V ±30V 6720 pF @ 400 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F120B

APT7F120B

MOSFET N-CH 1200V 7A TO247

Microchip Technology
3,635 -

RFQ

APT7F120B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.9Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120S

MSC040SMA120S

SICFET N-CH 1200V 64A TO268

Microchip Technology
2,862 -

RFQ

MSC040SMA120S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W -55°C ~ 175°C (TJ) Surface Mount
IXFX20N120P

IXFX20N120P

MOSFET N-CH 1200V 20A PLUS247-3

IXYS
2,775 -

RFQ

IXFX20N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1201R2BLLG

APT1201R2BLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology
3,474 -

RFQ

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.2Ohm @ 6A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 3100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL100N50P

IXFL100N50P

MOSFET N-CH 500V 70A ISOPLUS264

IXYS
2,885 -

RFQ

IXFL100N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 70A (Tc) 10V 52mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 42446 Record«Prev12345...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario

Tipsχ