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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SF2004PT C0GDIODE GEN PURP 200V 20A TO247AD Taiwan Semiconductor Corporation |
3,192 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 20A | -55°C ~ 150°C | 1.1 V @ 20 A | |
|
|
SF2005PT C0GDIODE GEN PURP 300V 20A TO247AD Taiwan Semiconductor Corporation |
3,505 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 20A | -55°C ~ 150°C | 1.5 V @ 20 A | |
|
|
SF2006PT C0GDIODE GEN PURP 400V 20A TO247AD Taiwan Semiconductor Corporation |
2,469 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 20A | -55°C ~ 150°C | 1.5 V @ 20 A | |
|
SFAF808G C0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
2,727 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
HER603GDIODE GEN PURP 6A 200V R-6 Taiwan Semiconductor Corporation |
2,160 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 6A (DC) | -55°C ~ 150°C | 1 V @ 6 A | ||
|
S12MCHDIODE GEN PURP 1KV 12A DO214AB Taiwan Semiconductor Corporation |
2,399 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
SRAF530DIODE SCHOTTKY 30V 5A ITO220AC Taiwan Semiconductor Corporation |
2,882 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A (DC) | -55°C ~ 125°C | 550 mV @ 5 A | ||
|
|
S12KCHDIODE GEN PURP 800V 12A DO214AB Taiwan Semiconductor Corporation |
2,469 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
ES1GLHR3GDIODE GEN PURP 400V 1A SUB SMA Taiwan Semiconductor Corporation |
3,934 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
S12GCHDIODE GEN PURP 400V 12A DO214AB Taiwan Semiconductor Corporation |
2,855 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
|
ES1BLHRUGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,852 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
S12JCHDIODE GEN PURP 600V 12A DO214AB Taiwan Semiconductor Corporation |
3,771 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 12A (DC) | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
|
ES1DLHRUGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,172 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SF2008PT C0GDIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation |
2,117 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A | -55°C ~ 150°C | 1.9 V @ 20 A | |
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|
SRAS20150HMNGDIODE SCHOTTKY 150V 20A TO263AB Taiwan Semiconductor Corporation |
2,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.02 V @ 20 A |
|
S12GC V7GDIODE GEN PURP 400V 12A DO214AB Taiwan Semiconductor Corporation |
2,213 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
|
S12JC V7GDIODE GEN PURP 600V 12A DO214AB Taiwan Semiconductor Corporation |
3,198 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
SR1203DIODE SCHOTTKY 12A 30V DO-201AD Taiwan Semiconductor Corporation |
2,795 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 12A (DC) | -55°C ~ 150°C | 550 mV @ 12 A | ||
|
|
S12KC V7GDIODE GEN PURP 800V 12A DO214AB Taiwan Semiconductor Corporation |
3,116 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 78pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 12A | -55°C ~ 150°C | 1.1 V @ 12 A | |
|
TSPB15U45S S1GDIODE SCHOTTKY 45V 15A SMPC4.0 Taiwan Semiconductor Corporation |
3,747 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 560 mV @ 15 A |
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