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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
S1BL RVG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	108	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	9pF @ 4V, 1MHz	1.8 µs	5 µA @ 100 V	100 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
MBR1060 C0G DIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation	706	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
SF2005PTHC0G DIODE GEN PURP 300V 20A TO247AD Taiwan Semiconductor Corporation	2,681	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	20A	-55°C ~ 150°C	1.5 V @ 20 A
SF2006PTHC0G DIODE GEN PURP 400V 20A TO247AD Taiwan Semiconductor Corporation	3,390	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	20A	-55°C ~ 150°C	1.5 V @ 20 A
TST40L150CW C0G DIODE SCHOTTKY 150V 20A TO220AB Taiwan Semiconductor Corporation	2,248	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	20A	-55°C ~ 150°C	860 mV @ 20 A
SFF1604G C0G DIODE GEN PURP 200V 16A ITO220AB Taiwan Semiconductor Corporation	962	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	16A	-55°C ~ 150°C	975 mV @ 16 A
ES1FL RVG DIODE GEN PURP 300V 1A SUB SMA Taiwan Semiconductor Corporation	2,930	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFAF504G C0G DIODE GEN PURP 200V 5A ITO220AC Taiwan Semiconductor Corporation	932	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 150°C	975 mV @ 5 A
SFF2005G C0G DIODE GEN PURP 300V 20A ITO220AB Taiwan Semiconductor Corporation	960	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	90pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	20A	-55°C ~ 150°C	1.3 V @ 10 A
SFA808G C0G DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	270	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
6A10G DIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation	3,452	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	-	10 µA @ 100 V	100 V	6A	-55°C ~ 150°C	1.1 V @ 6 A
S12MC V7G DIODE GEN PURP 1KV 12A DO214AB Taiwan Semiconductor Corporation	5,100	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	78pF @ 4V, 1MHz	-	1 µA @ 1000 V	1000 V	12A	-55°C ~ 150°C	1.1 V @ 12 A
RS2DAL M3G 150NS, 2A, 200V, FAST RECOVERY R Taiwan Semiconductor Corporation	6,880	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	11pF @ 4V, 1MHz	150 ns	1 µA @ 200 V	200 V	2A (DC)	-55°C ~ 150°C	1.02 V @ 2 A
SS1H15LW RVG DIODE SCHOTTKY 150V 1A SOD123W Taiwan Semiconductor Corporation	2,989	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 nA @ 150 V	150 V	1A	-55°C ~ 175°C	850 mV @ 1 A
S1DLWHRVG DIODE GEN PURP 200V 1A SOD123W Taiwan Semiconductor Corporation	2,611	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	1 µA @ 200 V	200 V	1A	-55°C ~ 175°C	1.1 V @ 1 A
RS2JAL M3G 250NS, 2A, 600V, FAST RECOVERY R Taiwan Semiconductor Corporation	2,200	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	11pF @ 4V, 1MHz	250 ns	1 µA @ 600 V	600 V	2A (DC)	-55°C ~ 150°C	1.3 V @ 2 A
TST20L150CW C0G DIODE SCHOTTKY 150V 10A TO220AB Taiwan Semiconductor Corporation	971	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	960 mV @ 10 A
TST10H150CW C0G DIODE SCHOTTKY 150V 5A TO220AB Taiwan Semiconductor Corporation	953	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	5A	-55°C ~ 150°C	880 mV @ 5 A
TST10H200CW C0G DIODE SCHOTTKY 200V 5A TO220AB Taiwan Semiconductor Corporation	950	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	5A	-55°C ~ 150°C	910 mV @ 5 A
TST20L200CW C0G DIODE SCHOTTKY 200V 10A TO220AB Taiwan Semiconductor Corporation	902	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	990 mV @ 10 A