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Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
TST20L100CW C0G DIODE SCHOTTKY 100V 10A TO220AB Taiwan Semiconductor Corporation	895	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	10A	-55°C ~ 150°C	840 mV @ 10 A
SS34L RUG DIODE SCHOTTKY 40V 3A SUB SMA Taiwan Semiconductor Corporation	2,844	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	3A	-55°C ~ 125°C	500 mV @ 3 A
SS36L RUG DIODE SCHOTTKY 60V 3A SUB SMA Taiwan Semiconductor Corporation	2,594	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 60 V	60 V	3A	-55°C ~ 150°C	750 mV @ 3 A
SK810CH DIODE SCHOTTKY 100V 8A DO214AB Taiwan Semiconductor Corporation	2,518	-	RFQ		Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 100 V	100 V	8A (DC)	-55°C ~ 150°C	900 mV @ 8 A
TST20L120CW C0G DIODE SCHOTTKY 120V 10A TO220AB Taiwan Semiconductor Corporation	857	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 120 V	120 V	10A	-55°C ~ 150°C	930 mV @ 10 A
FR103G A0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	1,720	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
HS2MAL M3G 75NS, 2A, 1000V, HIGH EFFICIENT Taiwan Semiconductor Corporation	1,625	-	RFQ		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	12pF @ 4V, 1MHz	75 ns	1 µA @ 1000 V	1000 V	2A	-55°C ~ 150°C	1.7 V @ 2 A
S3M R7G DIODE GEN PURP 1KV 3A DO214AB Taiwan Semiconductor Corporation	1,530	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	-	10 µA @ 1000 V	1000 V	3A	-55°C ~ 150°C	1.15 V @ 3 A
TST10L200CW C0G DIODE SCHOTTKY 200V 10A TO220AB Taiwan Semiconductor Corporation	901	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	50 µA @ 200 V	200 V	10A	-55°C ~ 150°C	900 mV @ 10 A
RS1GLW RVG DIODE GEN PURP 400V 1A SOD123W Taiwan Semiconductor Corporation	1,040	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 175°C	1.3 V @ 1 A
UG8J C0G DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	987	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	30 µA @ 600 V	600 V	8A	-55°C ~ 150°C	2.9 V @ 8 A
TST20U100C C0G DIODE SCHOTTKY 100V 10A TO220AB Taiwan Semiconductor Corporation	944	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 100 V	100 V	10A	-55°C ~ 150°C	790 mV @ 10 A
RSFDL RVG DIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation	3,788	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	500mA	-55°C ~ 150°C	1.3 V @ 500 mA
TST20H120CW C0G DIODE SCHOTTKY 120V 10A TO220AB Taiwan Semiconductor Corporation	920	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 120 V	120 V	10A	-55°C ~ 150°C	900 mV @ 10 A
TST30L100CW C0G DIODE SCHOTTKY 100V 15A TO220AB Taiwan Semiconductor Corporation	886	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	200 µA @ 100 V	100 V	15A	-55°C ~ 150°C	820 mV @ 15 A
TST20H200CW C0G DIODE SCHOTTKY 200V 10A TO220AB Taiwan Semiconductor Corporation	947	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	10A	-55°C ~ 150°C	930 mV @ 10 A
TST20H150CW C0G DIODE SCHOTTKY 150V 10A TO220AB Taiwan Semiconductor Corporation	919	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	10A	-55°C ~ 150°C	900 mV @ 10 A
TST30L200CW C0G DIODE SCHOTTKY 200V 15A TO220AB Taiwan Semiconductor Corporation	824	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	15A	-55°C ~ 150°C	960 mV @ 15 A
SR310 A0G DIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation	3,655	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	3A	-55°C ~ 150°C	850 mV @ 3 A
SR320 A0G DIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation	3,555	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A