Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBU8J

KBU8J

BRIDGE RECT 1PHASE 600V 8A KBU

GeneSiC Semiconductor
3,310 -

RFQ

KBU8J

Ficha técnica

Bulk - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC2508W

GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

GeneSiC Semiconductor
2,131 -

RFQ

GBPC2508W

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 1.2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBU8D

GBU8D

BRIDGE RECT 1PHASE 200V 8A GBU

GeneSiC Semiconductor
2,759 -

RFQ

GBU8D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 8 A 1.1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J

GBU8J

BRIDGE RECT 1PHASE 600V 8A GBU

GeneSiC Semiconductor
2,414 -

RFQ

GBU8J

Ficha técnica

Bulk - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B

GBU8B

BRIDGE RECT 1PHASE 100V 8A GBU

GeneSiC Semiconductor
3,791 -

RFQ

GBU8B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 8 A 1.1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBU6M

KBU6M

BRIDGE RECT 1PHASE 1KV 6A KBU

GeneSiC Semiconductor
3,130 -

RFQ

KBU6M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU6B

KBU6B

BRIDGE RECT 1PHASE 100V 6A KBU

GeneSiC Semiconductor
2,154 -

RFQ

KBU6B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8M

KBU8M

BRIDGE RECT 1PHASE 1KV 8A KBU

GeneSiC Semiconductor
3,380 -

RFQ

KBU8M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU8G

KBU8G

BRIDGE RECT 1PHASE 400V 8A KBU

GeneSiC Semiconductor
2,437 -

RFQ

KBU8G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
BR62

BR62

BRIDGE RECT 1PHASE 200V 6A BR-6

GeneSiC Semiconductor
2,044 -

RFQ

BR62

Ficha técnica

Bulk - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 10 µA @ 200 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-6
KBPC5010T

KBPC5010T

BRIDGE RECT 1P 1KV 50A KBPC-T

GeneSiC Semiconductor
798 -

RFQ

KBPC5010T

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, KBPC-T
GBPC3508W

GBPC3508W

BRIDGE RECT 1P 800V 35A GBPC-W

GeneSiC Semiconductor
2,497 -

RFQ

GBPC3508W

Ficha técnica

Bulk - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3502T

GBPC3502T

BRIDGE RECT 1P 200V 35A GBPC-T

GeneSiC Semiconductor
805 -

RFQ

GBPC3502T

Ficha técnica

Bulk - Active Single Phase Standard 200 V 35 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-T
GBPC3504T

GBPC3504T

BRIDGE RECT 1P 400V 35A GBPC-T

GeneSiC Semiconductor
564 -

RFQ

GBPC3504T

Ficha técnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC-T
DB103G

DB103G

BRIDGE RECT 1PHASE 200V 1A DB

GeneSiC Semiconductor
3,060 -

RFQ

DB103G

Ficha técnica

Bulk - Active Single Phase Standard 200 V 1 A 1.1 V @ 1 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
GBU4G

GBU4G

BRIDGE RECT 1PHASE 400V 4A GBU

GeneSiC Semiconductor
3,063 -

RFQ

GBU4G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G

GBU8G

BRIDGE RECT 1PHASE 400V 8A GBU

GeneSiC Semiconductor
2,199 -

RFQ

GBU8G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU10D

GBU10D

BRIDGE RECT 1PHASE 200V 10A GBU

GeneSiC Semiconductor
3,984 -

RFQ

GBU10D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 10 A 1.1 V @ 10 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBPC2504W

GBPC2504W

BRIDGE RECT 1P 400V 25A GBPC-W

GeneSiC Semiconductor
3,196 -

RFQ

GBPC2504W

Ficha técnica

Bulk - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2508T

GBPC2508T

BRIDGE RECT 1PHASE 800V 25A GBPC

GeneSiC Semiconductor
3,107 -

RFQ

GBPC2508T

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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