Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBPC2506T

GBPC2506T

BRIDGE RECT 1PHASE 600V 25A GBPC

GeneSiC Semiconductor
930 -

RFQ

GBPC2506T

Ficha técnica

Bulk - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBPC3504W

GBPC3504W

BRIDGE RECT 1P 400V 35A GBPC-W

GeneSiC Semiconductor
2,420 -

RFQ

GBPC3504W

Ficha técnica

Bulk - Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2504T

GBPC2504T

BRIDGE RECT 1PHASE 400V 25A GBPC

GeneSiC Semiconductor
101 -

RFQ

GBPC2504T

Ficha técnica

Bulk - Active Single Phase Standard 400 V 25 A 1.1 V @ 12.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal 4-Square, GBPC
GBU6J

GBU6J

BRIDGE RECT 1PHASE 600V 6A GBU

GeneSiC Semiconductor
3,883 -

RFQ

GBU6J

Ficha técnica

Bulk - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M

GBU8M

BRIDGE RECT 1PHASE 1KV 8A GBU

GeneSiC Semiconductor
3,239 -

RFQ

GBU8M

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BR81

BR81

BRIDGE RECT 1PHASE 100V 8A BR-8

GeneSiC Semiconductor
455 -

RFQ

BR81

Ficha técnica

Bulk - Active Single Phase Standard 100 V 8 A 1.1 V @ 4 A 10 µA @ 100 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
GBU6B

GBU6B

BRIDGE RECT 1PHASE 100V 6A GBU

GeneSiC Semiconductor
383 -

RFQ

GBU6B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 6 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A

GBU4A

BRIDGE RECT 1PHASE 50V 4A GBU

GeneSiC Semiconductor
353 -

RFQ

GBU4A

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BR88

BR88

BRIDGE RECT 1PHASE 800V 8A BR-8

GeneSiC Semiconductor
378 -

RFQ

BR88

Ficha técnica

Bulk - Active Single Phase Standard 800 V 8 A 1.1 V @ 4 A 10 µA @ 600 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
GBL005

GBL005

BRIDGE RECT 1PHASE 50V 4A GBL

GeneSiC Semiconductor
186 -

RFQ

GBL005

Ficha técnica

Bulk - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBPC2510W

GBPC2510W

BRIDGE RECT 1P 1KV 25A GBPC-W

GeneSiC Semiconductor
2,908 -

RFQ

GBPC2510W

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.1 V @ 12.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC3510W

GBPC3510W

BRIDGE RECT 1P 1KV 35A GBPC-W

GeneSiC Semiconductor
2,170 -

RFQ

GBPC3510W

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
KBU6D

KBU6D

BRIDGE RECT 1PHASE 200V 6A KBU

GeneSiC Semiconductor
2,308 -

RFQ

KBU6D

Ficha técnica

Bulk - Active Single Phase Standard 200 V 6 A 1 V @ 6 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
GBPC2506W

GBPC2506W

BRIDGE RECT 1P 600V 25A GBPC-W

GeneSiC Semiconductor
3,386 -

RFQ

GBPC2506W

Ficha técnica

Bulk - Active Single Phase Standard 600 V 25 A 1.1 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBPC2502W

GBPC2502W

BRIDGE RECT 1P 200V 25A GBPC-W

GeneSiC Semiconductor
3,077 -

RFQ

GBPC2502W

Ficha técnica

Bulk - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-W
GBU4B

GBU4B

BRIDGE RECT 1PHASE 100V 4A GBU

GeneSiC Semiconductor
3,057 -

RFQ

GBU4B

Ficha técnica

Bulk - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
DB101G

DB101G

BRIDGE RECT 1PHASE 50V 1A DB

GeneSiC Semiconductor
3,380 -

RFQ

DB101G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 1 A 1.1 V @ 1 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB102G

DB102G

BRIDGE RECT 1PHASE 100V 1A DB

GeneSiC Semiconductor
3,088 -

RFQ

DB102G

Ficha técnica

Bulk - Active Single Phase Standard 100 V 1 A 1.1 V @ 1 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB104G

DB104G

BRIDGE RECT 1PHASE 400V 1A DB

GeneSiC Semiconductor
3,299 -

RFQ

DB104G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 1 A 1.1 V @ 1 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB105G

DB105G

BRIDGE RECT 1PHASE 600V 1A DB

GeneSiC Semiconductor
3,231 -

RFQ

DB105G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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