Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
DB106G

DB106G

BRIDGE RECT 1PHASE 800V 1A DB

GeneSiC Semiconductor
2,259 -

RFQ

DB106G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 1 A 1.1 V @ 1 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB107G

DB107G

BRIDGE RECT 1PHASE 1KV 1A DB

GeneSiC Semiconductor
3,600 -

RFQ

DB107G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
KBP201G

KBP201G

BRIDGE RECT 1PHASE 50V 2A KBP

GeneSiC Semiconductor
3,429 -

RFQ

KBP201G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 2 A 1.1 V @ 2 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP202G

KBP202G

BRIDGE RECT 1PHASE 100V 2A KBP

GeneSiC Semiconductor
3,095 -

RFQ

KBP202G

Ficha técnica

Bulk - Active Single Phase Standard 100 V 2 A 1.1 V @ 2 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP204G

KBP204G

BRIDGE RECT 1PHASE 400V 2A KBP

GeneSiC Semiconductor
3,185 -

RFQ

KBP204G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 2 A 1.1 V @ 2 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP206G

KBP206G

BRIDGE RECT 1PHASE 600V 2A KBP

GeneSiC Semiconductor
2,643 -

RFQ

KBP206G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 2 A 1.1 V @ 2 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP208G

KBP208G

BRIDGE RECT 1PHASE 800V 2A KBP

GeneSiC Semiconductor
3,657 -

RFQ

KBP208G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 2 A 1.1 V @ 2 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
KBP210G

KBP210G

BRIDGE RECT 1PHASE 1KV 2A KBP

GeneSiC Semiconductor
2,359 -

RFQ

KBP210G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 2 A 1.1 V @ 2 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBP
DB151G

DB151G

BRIDGE RECT 1PHASE 50V 1.5A DB

GeneSiC Semiconductor
2,447 -

RFQ

DB151G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB152G

DB152G

BRIDGE RECT 1PHASE 100V 1.5A DB

GeneSiC Semiconductor
2,146 -

RFQ

DB152G

Ficha técnica

Bulk - Active Single Phase Standard 100 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB153G

DB153G

BRIDGE RECT 1PHASE 200V 1.5A DB

GeneSiC Semiconductor
3,392 -

RFQ

DB153G

Ficha técnica

Bulk - Active Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB154G

DB154G

BRIDGE RECT 1PHASE 400V 1.5A DB

GeneSiC Semiconductor
2,522 -

RFQ

DB154G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB155G

DB155G

BRIDGE RECT 1PHASE 600V 1.5A DB

GeneSiC Semiconductor
2,434 -

RFQ

DB155G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB156G

DB156G

BRIDGE RECT 1PHASE 800V 1.5A DB

GeneSiC Semiconductor
2,602 -

RFQ

DB156G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 1.5 A 1.1 V @ 1.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
DB157G

DB157G

BRIDGE RECT 1PHASE 1KV 1.5A DB

GeneSiC Semiconductor
3,708 -

RFQ

DB157G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 1.5 A 1.1 V @ 1.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.321, 8.15mm)
GBU8K

GBU8K

BRIDGE RECT 1PHASE 800V 8A GBU

GeneSiC Semiconductor
3,171 -

RFQ

GBU8K

Ficha técnica

Bulk - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BR305

BR305

BRIDGE RECT 1PHASE 50V 3A BR-3

GeneSiC Semiconductor
3,483 -

RFQ

BR305

Ficha técnica

Bulk - Active Single Phase Standard 50 V 3 A 1 V @ 1.5 A 10 µA @ 50 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-3
BR31

BR31

BRIDGE RECT 1PHASE 100V 3A BR-3

GeneSiC Semiconductor
3,901 -

RFQ

BR31

Ficha técnica

Bulk - Active Single Phase Standard 100 V 3 A 1 V @ 1.5 A 10 µA @ 100 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-3
BR310

BR310

BRIDGE RECT 1PHASE 1KV 3A BR-3

GeneSiC Semiconductor
3,058 -

RFQ

BR310

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3 A 1 V @ 1.5 A 10 µA @ 1000 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-3
BR32

BR32

BRIDGE RECT 1PHASE 200V 3A BR-3

GeneSiC Semiconductor
3,586 -

RFQ

BR32

Ficha técnica

Bulk - Active Single Phase Standard 200 V 3 A 1 V @ 1.5 A 10 µA @ 200 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-3
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1800+
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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