Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
FGH75N60UFTU

FGH75N60UFTU

IGBT 600V 150A 452W TO247

onsemi
2,624 -

RFQ

FGH75N60UFTU

Ficha técnica

Tube - Obsolete Field Stop 600 V 150 A 225 A 2.4V @ 15V, 75A 452 W 3.05mJ (on), 1.35mJ (off) Standard 250 nC 27ns/128ns 400V, 75A, 3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGB18N40LZ-1

STGB18N40LZ-1

IGBT 420V 30A 150W I2PAK

STMicroelectronics
3,451 -

RFQ

STGB18N40LZ-1

Ficha técnica

Tube PowerMESH™ Obsolete - 420 V 30 A 40 A 1.7V @ 4.5V, 10A 150 W - Logic 29 nC 650ns/13.5µs 300V, 10A, 5V - -55°C ~ 175°C (TJ) Through Hole
STGW45NC60WD

STGW45NC60WD

IGBT 600V 90A 285W TO247

STMicroelectronics
3,382 -

RFQ

STGW45NC60WD

Ficha técnica

Tube PowerMESH™ Obsolete - 600 V 90 A 230 A 2.6V @ 15V, 30A 285 W 302µJ (on), 349µJ (off) Standard 126 nC 33ns/168ns 390V, 30A, 10Ohm, 15V 45 ns -55°C ~ 150°C (TJ) Through Hole
STGD18N40LZ-1

STGD18N40LZ-1

IGBT 420V 25A 125W IPAK

STMicroelectronics
2,559 -

RFQ

STGD18N40LZ-1

Ficha técnica

Tube PowerMESH™ Obsolete - 420 V 25 A 40 A 1.7V @ 4.5V, 10A 125 W - Logic 29 nC 650ns/13.5µs 300V, 10A, 5V - -55°C ~ 175°C (TJ) Through Hole
IXGA24N120C3

IXGA24N120C3

IGBT 1200V 48A 250W TO263

IXYS
2,646 -

RFQ

IXGA24N120C3

Ficha técnica

Tube GenX3™ Active PT 1200 V 48 A 96 A 4.2V @ 15V, 20A 250 W 1.16mJ (on), 470µJ (off) Standard 79 nC 16ns/93ns 600V, 20A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT50GS60BRG

APT50GS60BRG

IGBT 600V 93A 415W TO247

Microchip Technology
3,553 -

RFQ

APT50GS60BRG

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 93 A 195 A 3.15V @ 15V, 50A 415 W 755µJ (off) Standard 235 nC 16ns/225ns 400V, 50A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGA50N100BNTD2

FGA50N100BNTD2

IGBT 1000V 50A 156W TO3P

onsemi
3,829 -

RFQ

FGA50N100BNTD2

Ficha técnica

Tube - Obsolete NPT and Trench 1000 V 50 A 200 A 2.9V @ 15V, 60A 156 W - Standard 257 nC 34ns/243ns 600V, 60A, 10Ohm, 15V 75 ns -55°C ~ 150°C (TJ) Through Hole
FGA50N100BNTTU

FGA50N100BNTTU

IGBT 1000V 50A 156W TO3P

onsemi
2,486 -

RFQ

FGA50N100BNTTU

Ficha técnica

Tube - Obsolete NPT and Trench 1000 V 50 A 200 A 2.9V @ 15V, 60A 156 W - Standard 257 nC 34ns/243ns 600V, 60A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGA60N60UFDTU

FGA60N60UFDTU

IGBT 600V 120A 298W TO3P

onsemi
2,941 -

RFQ

FGA60N60UFDTU

Ficha técnica

Tube - Obsolete Field Stop 600 V 120 A 180 A 2.4V @ 15V, 60A 298 W 1.81mJ (on), 810µJ (off) Standard 188 nC 23ns/130ns 400V, 60A, 5Ohm, 15V 47 ns -55°C ~ 150°C (TJ) Through Hole
FGH40N65UFDTU

FGH40N65UFDTU

IGBT FIELD STOP 650V 80A TO247-3

onsemi
3,246 -

RFQ

Bulk,Tube - Obsolete Field Stop 650 V 80 A 120 A 2.4V @ 15V, 40A 290 W 1.19mJ (on), 460µJ (off) Standard 120 nC 24ns/112ns 400V, 40A, 10Ohm, 15V 45 ns -55°C ~ 150°C (TJ) Through Hole
GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC

Toshiba Semiconductor and Storage
3,408 -

RFQ

GT10G131(TE12L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete - 400 V - 200 A 2.3V @ 4V, 200A 1 W - Standard - 3.1µs/2µs - - 150°C (TJ) Surface Mount
GT10J312(Q)

GT10J312(Q)

IGBT 600V 10A 60W TO220SM

Toshiba Semiconductor and Storage
3,301 -

RFQ

GT10J312(Q)

Ficha técnica

Tube - Obsolete - 600 V 10 A 20 A 2.7V @ 15V, 10A 60 W - Standard - 400ns/400ns 300V, 10A, 100Ohm, 15V 200 ns 150°C (TJ) Surface Mount
GT60N321(Q)

GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

Toshiba Semiconductor and Storage
2,282 -

RFQ

GT60N321(Q)

Ficha técnica

Tube - Obsolete - 1000 V 60 A 120 A 2.8V @ 15V, 60A 170 W - Standard - 330ns/700ns - 2.5 µs 150°C (TJ) Through Hole
GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

IGBT 400V 600MW 8TSSOP

Toshiba Semiconductor and Storage
3,508 -

RFQ

GT8G133(TE12L,Q)

Ficha técnica

Tape & Reel (TR) - Obsolete - 400 V - 150 A 2.9V @ 4V, 150A 600 mW - Standard - 1.7µs/2µs - - 150°C (TJ) Surface Mount
GT50J121(Q)

GT50J121(Q)

IGBT 600V 50A 240W TO3P LH

Toshiba Semiconductor and Storage
2,694 -

RFQ

GT50J121(Q)

Ficha técnica

Tube - Obsolete - 600 V 50 A 100 A 2.45V @ 15V, 50A 240 W 1.3mJ (on), 1.34mJ (off) Standard - 90ns/300ns 300V, 50A, 13Ohm, 15V - 150°C (TJ) Through Hole
STGF14N60D

STGF14N60D

IGBT 600V 11A 33W TO220FP

STMicroelectronics
2,945 -

RFQ

STGF14N60D

Ficha técnica

Tube PowerMESH™ Obsolete - 600 V 11 A 50 A 2.1V @ 15V, 7A 33 W - Standard - - 390V, 7A, 10Ohm, 15V 37 ns - Through Hole
STGP14N60D

STGP14N60D

IGBT 600V 25A 95W TO220

STMicroelectronics
2,644 -

RFQ

STGP14N60D

Ficha técnica

Tube PowerMESH™ Obsolete - 600 V 25 A 50 A 2.1V @ 15V, 7A 95 W - Standard - - 390V, 7A, 10Ohm, 15V 37 ns - Through Hole
STGDL6NC60DIT4

STGDL6NC60DIT4

IGBT 600V 13A 50W DPAK

STMicroelectronics
2,386 -

RFQ

STGDL6NC60DIT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerMESH™ Obsolete - 600 V 13 A 18 A 2.9V @ 15V, 3A 50 W 32µJ (on), 24µJ (off) Standard 12 nC 6.7ns/46ns 390V, 3A, 10Ohm, 15V 23 ns -55°C ~ 150°C (TJ) Surface Mount
IRG6I330U-110P

IRG6I330U-110P

IGBT 330V 28A 43W TO220ABFP

Infineon Technologies
3,999 -

RFQ

IRG6I330U-110P

Ficha técnica

Tube - Obsolete - 330 V 28 A - 1.55V @ 15V, 28A 43 W - Standard - 39ns/120ns - - - Through Hole
IRG6I330U-111P

IRG6I330U-111P

IGBT 330V 28A 43W TO220ABFP

Infineon Technologies
2,836 -

RFQ

IRG6I330U-111P

Ficha técnica

Tube - Obsolete - 330 V 28 A - 1.55V @ 15V, 28A 43 W - Standard - 39ns/120ns - - - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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