Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGX120N120A3

IXGX120N120A3

IGBT 1200V 240A 830W PLUS247

IXYS
2,048 -

RFQ

IXGX120N120A3

Ficha técnica

Tube GenX3™ Active PT 1200 V 240 A 600 A 2.2V @ 15V, 100A 830 W 10mJ (on), 33mJ (off) Standard 420 nC 40ns/490ns 960V, 100A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGF25N250

IXGF25N250

IGBT 2500V 30A 114W I4-PAK

IXYS
3,989 -

RFQ

IXGF25N250

Ficha técnica

Tube - Active NPT 2500 V 30 A 200 A 5.2V @ 15V, 75A 114 W - Standard 75 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXGP20N120B3

IXGP20N120B3

IGBT 1200V 36A 180W TO220

IXYS
3,318 -

RFQ

IXGP20N120B3

Ficha técnica

Tube GenX3™ Active PT 1200 V 36 A 80 A 3.1V @ 15V, 16A 180 W 920µJ (on), 560µJ (off) Standard 51 nC 16ns/150ns 600V, 16A, 15Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGQ85N33PCD1

IXGQ85N33PCD1

IGBT 330V 85A 150W TO3P

IXYS
3,519 -

RFQ

IXGQ85N33PCD1

Ficha técnica

Tube Polar™ Active - 330 V 85 A - 3V @ 15V, 100A 150 W - Standard 80 nC - - 250 ns -55°C ~ 150°C (TJ) Through Hole
IXYH120N65A5

IXYH120N65A5

IGBT 650V 120A X5 XPT TO-247

IXYS
3,569 -

RFQ

IXYH120N65A5

Ficha técnica

Tube XPT™, GenX5™ Active PT 650 V 290 A 790 A 1.35V @ 15V, 75A 830 W 1.25mJ (on), 3.2mJ (off) Standard 314 nC 45ns/370ns 400V, 60A, 3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYP20N65C3D1

IXYP20N65C3D1

IGBT 650V 18A 50W TO220

IXYS
3,487 -

RFQ

IXYP20N65C3D1

Ficha técnica

Tube GenX3™, XPT™ Active PT 650 V 50 A 105 A 2.5V @ 15V, 20A 200 W 430µJ (on), 350µJ (off) Standard 30 nC 19ns/80ns 400V, 20A, 20Ohm, 15V 135 ns -55°C ~ 175°C (TJ) Through Hole
IXXX160N65C4

IXXX160N65C4

IGBT 650V 290A 940W PLUS247

IXYS
2,435 -

RFQ

IXXX160N65C4

Ficha técnica

Tube GenX4™, XPT™ Active PT 650 V 290 A 800 A 2.1V @ 15V, 160A 940 W 3.5mJ (on), 1.3mJ (off) Standard 422 nC 52ns/197ns 400V, 80A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYK110N120C4

IXYK110N120C4

IGBT 1200V 110A GEN4 XPT TO264

IXYS
2,343 -

RFQ

IXYK110N120C4

Ficha técnica

Tube XPT™ Active - 1200 V 310 A 740 A 2.4V @ 15V, 110A 1360 W 3.6mJ (on), 1.9mJ (off) Standard 330 nC 40ns/320ns 600V, 50A, 2Ohm, 15V 48 ns -55°C ~ 175°C (TJ) Through Hole
IXYK110N120B4

IXYK110N120B4

IGBT 1200V 110A GEN4 XPT TO264

IXYS
2,064 -

RFQ

IXYK110N120B4

Ficha técnica

Tube XPT™ Active - 1200 V 340 A 800 A 2.1V @ 15V, 110A 1360 W 3.6mJ (on), 3.85mJ (off) Standard 340 nC 45ns/390ns 600V, 50A, 2Ohm, 15V 50 ns -55°C ~ 175°C (TJ) Through Hole
IXA4I1200UC-TUB

IXA4I1200UC-TUB

DISC IGBT XPT-GENX3 TO-252D

IXYS
3,473 -

RFQ

Tube XPT™ Active PT 1200 V 9 A - 2.1V @ 15V, 3A 45 W 400µJ (on), 300µJ (off) Standard 12 nC 70ns/250ns 600V, 3A, 330Ohm, 15V - - Surface Mount
IXGP48N60A3

IXGP48N60A3

DISC IGBT PT-LOW FREQUENCY TO-22

IXYS
3,294 -

RFQ

Tube GenX3™ Active PT 600 V 120 A 300 A 1.35V @ 15V, 32A 300 W 950µJ (on), 2.9mJ (off) Standard 110 nC 25ns/334ns 480V, 32A, 5Ohm, 15V 30 ns -55°C ~ 150°C (TJ) Through Hole
IXYH55N120C4

IXYH55N120C4

IGBT 1200V 55A GEN4 XPT TO247

IXYS
2,063 -

RFQ

IXYH55N120C4

Ficha técnica

Tube XPT™ Active - 1200 V 140 A 290 A 2.5V @ 15V, 55A 650 W 3.5mJ (on), 1.34mJ (off) Standard 114 nC 20ns/180ns 600V, 40A, 5Ohm, 15V 50 ns -55°C ~ 175°C (TJ) Through Hole
IXXH150N60C3

IXXH150N60C3

IGBT 600V TO247

IXYS
3,277 -

RFQ

IXXH150N60C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 300 A 150 A 2.5V @ 15V, 150A 1360 W 3.4mJ (on), 1.8mJ (off) Standard 200 nC 34ns/120ns 400V, 75A, 2Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXGH10N170

IXGH10N170

IGBT 1700V 20A 110W TO247

IXYS
3,604 -

RFQ

IXGH10N170

Ficha técnica

Tube - Active NPT 1700 V 20 A 70 A 4V @ 15V, 10A 110 W - Standard 32 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXBH6N170

IXBH6N170

IGBT 1700V 12A 75W TO247AD

IXYS
3,344 -

RFQ

IXBH6N170

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 12 A 36 A 3.4V @ 15V, 6A 75 W - Standard 17 nC - - 1.08 µs -55°C ~ 150°C (TJ) Through Hole
IXXH75N60C3D1

IXXH75N60C3D1

IGBT 600V 150A 750W TO247

IXYS
2,172 -

RFQ

IXXH75N60C3D1

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 150 A 300 A 2.3V @ 15V, 60A 750 W 1.6mJ (on), 800µJ (off) Standard 107 nC 35ns/90ns 400V, 60A, 5Ohm, 15V 25 ns -55°C ~ 175°C (TJ) Through Hole
IXGH16N170A

IXGH16N170A

IGBT 1700V 16A 190W TO247

IXYS
3,407 -

RFQ

IXGH16N170A

Ficha técnica

Tube - Active NPT 1700 V 16 A 40 A 5V @ 15V, 11A 190 W 900µJ (off) Standard 65 nC 36ns/160ns 850V, 16A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH30N120C3D1

IXYH30N120C3D1

IGBT 1200V 66A 416W TO247

IXYS
2,519 -

RFQ

IXYH30N120C3D1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 66 A 133 A 3.3V @ 15V, 30A 416 W 2.6mJ (on), 1.1mJ (off) Standard 69 nC 19ns/130ns 600V, 30A, 10Ohm, 15V 195 ns -55°C ~ 150°C (TJ) Through Hole
IXYH85N120C4

IXYH85N120C4

IGBT 1200V 85A GEN4 XPT TO247

IXYS
2,377 -

RFQ

IXYH85N120C4

Ficha técnica

Tube XPT™ Active - 1200 V 240 A 420 A 2.5V @ 15V, 85A 1150 W 4.3mJ (on), 2mJ (off) Standard 192 nC 35ns/280ns 600V, 50A, 5Ohm, 15V 60 ns -55°C ~ 175°C (TJ) Through Hole
IXYH75N65C3D1

IXYH75N65C3D1

DISC IGBT XPT-GENX3 TO-247AD

IXYS
2,492 -

RFQ

Tube XPT™, GenX3™ Active PT 650 V 175 A 360 A 2.3V @ 15V, 60A 750 W 2mJ (on), 950µJ (off) Standard 122 nC 26ns/93ns 400V, 60A, 3Ohm, 15V 65 ns -55°C ~ 175°C (TJ) Through Hole
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