Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
MMIX1Y100N120C3H1

MMIX1Y100N120C3H1

IGBT 1200V 92A 400W SMPD

IXYS
3,524 -

RFQ

MMIX1Y100N120C3H1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 92 A 440 A 3.5V @ 15V, 100A 400 W 6.5mJ (on), 2.9mJ (off) Standard 270 nC 48ns/123ns 600V, 100A, 1Ohm, 15V 420 ns -55°C ~ 175°C (TJ) Surface Mount
IXGF20N300

IXGF20N300

IGBT 3000V 22A 100W I4-PAK

IXYS
3,349 -

RFQ

IXGF20N300

Ficha técnica

Tube - Active - 3000 V 22 A 103 A 3.2V @ 15V, 20A 100 W - Standard 31 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXGT6N170

IXGT6N170

IGBT 1700V 12A 75W TO268

IXYS
2,909 -

RFQ

IXGT6N170

Ficha técnica

Tube - Active NPT 1700 V 12 A 24 A 4V @ 15V, 6A 75 W 1.5mJ (off) Standard 20 nC 40ns/250ns 1360V, 6A, 33Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXGX320N60B3

IXGX320N60B3

IGBT 600V 500A 1700W PLUS247

IXYS
3,814 -

RFQ

Tube GenX3™ Active PT 600 V 500 A 1200 A 1.6V @ 15V, 100A 1700 W 2.7mJ (on), 3.5mJ (off) Standard 585 nC 44ns/250ns 480V, 100A, 1Ohm, 15V - - Through Hole
IXYH8N250CV1HV

IXYH8N250CV1HV

IGBT 2500V 29A TO247HV

IXYS
2,758 -

RFQ

IXYH8N250CV1HV

Ficha técnica

Tube XPT™ Active - 2500 V 29 A 70 A 4V @ 15V, 8A 280 W 2.6mJ (on), 1.07mJ (off) Standard 45 nC 11ns/180ns 1250V, 8A, 15Ohm, 15V 5 ns -55°C ~ 175°C (TJ) Through Hole
IXYH12N250CV1HV

IXYH12N250CV1HV

IGBT 2500V 28A TO247HV

IXYS
3,583 -

RFQ

IXYH12N250CV1HV

Ficha técnica

Tube XPT™ Active - 2500 V 28 A 80 A 4.5V @ 15V, 12A 310 W 3.56mJ (on), 1.7mJ (off) Standard 56 nC 12ns/167ns 1250V, 12A, 10Ohm, 15V 16 ns -55°C ~ 175°C (TJ) Through Hole
IXBA16N170AHV

IXBA16N170AHV

REVERSE CONDUCTING IGBT

IXYS
2,427 -

RFQ

IXBA16N170AHV

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Surface Mount
IXYB82N120C3H1

IXYB82N120C3H1

IGBT 1200V 164A 1040W PLUS264

IXYS
3,924 -

RFQ

IXYB82N120C3H1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 164 A 320 A 3.2V @ 15V, 82A 1040 W 4.95mJ (on), 2.78mJ (off) Standard 215 nC 29ns/192ns 600V, 80A, 2Ohm, 15V 420 ns -55°C ~ 150°C (TJ) Through Hole
IXYL40N250CV1

IXYL40N250CV1

IGBT 2.5KV 70A ISOPLUSI5-PAK

IXYS
2,775 -

RFQ

IXYL40N250CV1

Ficha técnica

Tube XPT™ Active - 2500 V 70 A 400 A 4V @ 15V, 40A 577 W 11.7mJ (on), 6.9mJ (off) Standard 270 nC 21ns/200ns 1250V, 40A, 1Ohm, 15V 210 ns -55°C ~ 175°C (TJ) Through Hole
IXYH16N170C

IXYH16N170C

IGBT 1.7KV 40A TO247

IXYS
2,527 -

RFQ

IXYH16N170C

Ficha técnica

Tube XPT™ Active - 1700 V 40 A 100 A 3.8V @ 15V, 16A 310 W 2.1mJ (on), 1.5mJ (off) Standard 56 nC 11ns/140ns 850V, 16A, 10Ohm, 15V 19 ns -55°C ~ 175°C (TJ) Through Hole
IXGH16N170

IXGH16N170

IGBT 1700V 32A 190W TO247AD

IXYS
3,618 -

RFQ

IXGH16N170

Ficha técnica

Tube - Active NPT 1700 V 32 A 80 A 3.5V @ 15V, 16A 190 W 9.3mJ (off) Standard 78 nC 45ns/400ns 1360V, 16A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXBH16N170

IXBH16N170

IGBT 1700V 40A 250W TO247AD

IXYS
2,204 -

RFQ

IXBH16N170

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 40 A 120 A 3.3V @ 15V, 16A 250 W - Standard 72 nC - - 1.32 µs -55°C ~ 150°C (TJ) Through Hole
IXXX200N65B4

IXXX200N65B4

IGBT 650V 370A 1150W PLUS247

IXYS
2,167 -

RFQ

IXXX200N65B4

Ficha técnica

Tube GenX4™, XPT™ Active PT 650 V 370 A 1000 A 1.7V @ 15V, 160A 1150 W 4.4mJ (on), 2.2mJ (off) Standard 553 nC 62ns/245ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYH30N450HV

IXYH30N450HV

IGBT 4500V 30A TO-247HV

IXYS
2,036 -

RFQ

IXYH30N450HV

Ficha técnica

Tube XPT™ Active PT 4500 V 60 A 200 A 3.9V @ 15V, 30A 430 W - Standard 88 nC - 960V, 30A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYT30N450HV

IXYT30N450HV

IGBT

IXYS
507 -

RFQ

IXYT30N450HV

Ficha técnica

Tube XPT™ Active - 4500 V 60 A 200 A 3.9V @ 15V, 30A 430 W - Standard 88 nC 38ns/168ns 960V, 30A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXBT42N300HV

IXBT42N300HV

IGBT 3000V 42A 357W TO268

IXYS
2,222 -

RFQ

IXBT42N300HV

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 104 A 400 A 3V @ 15V, 42A 500 W - Standard 200 nC 72ns/445ns 1500V, 42A, 20Ohm, 15V 1.7 µs -55°C ~ 150°C (TJ) Surface Mount
IXBF20N360

IXBF20N360

IGBT 3600V 45A ISOPLUS I4PAK

IXYS
2,610 -

RFQ

IXBF20N360

Ficha técnica

Tube BIMOSFET™ Active - 3600 V 45 A 220 A 3.4V @ 15V, 20A 230 W 15.5mJ (on), 4.3mJ (off) Standard 43 nC 18ns/238ns 1500V, 20A, 10Ohm, 15V 1.7 µs -55°C ~ 150°C (TJ) Through Hole
IXBH32N300

IXBH32N300

IGBT 3000V 80A 400W TO247

IXYS
2,386 -

RFQ

IXBH32N300

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 80 A 280 A 3.2V @ 15V, 32A 400 W - Standard 142 nC - - 1.5 µs -55°C ~ 150°C (TJ) Through Hole
IXBK55N300

IXBK55N300

IGBT 3000V 130A 625W TO264

IXYS
2,096 -

RFQ

IXBK55N300

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 130 A 600 A 3.2V @ 15V, 55A 625 W - Standard 335 nC - - 1.9 µs -55°C ~ 150°C (TJ) Through Hole
IXGH30N60C3D1

IXGH30N60C3D1

IGBT 600V 60A 220W TO247

IXYS
3,271 -

RFQ

IXGH30N60C3D1

Ficha técnica

Tube GenX3™ Active - 600 V 60 A 150 A 3V @ 15V, 20A 220 W 270µJ (on), 90µJ (off) Standard 38 nC 16ns/42ns 300V, 20A, 5Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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