Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGW80TK65EGVC11

RGW80TK65EGVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,417 -

RFQ

RGW80TK65EGVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 39 A 160 A 1.9V @ 15V, 40A 81 W 760µJ (on), 720µJ (off) Standard 110 nC 44ns/143ns 400V, 40A, 10Ohm, 15V 102 ns -40°C ~ 175°C (TJ) Through Hole
RGS80TS65DHRC11

RGS80TS65DHRC11

8US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
3,557 -

RFQ

RGS80TS65DHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 73 A 120 A 2.1V @ 15V, 40A 272 W 1.05mJ (on), 1.03mJ (off) Standard 48 nC 37ns/112ns 400V, 40A, 10Ohm, 15V 103 ns -40°C ~ 175°C (TJ) Through Hole
RGWX5TS65DGC11

RGWX5TS65DGC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,738 -

RFQ

RGWX5TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W 2.39mJ (on), 1.68mJ (off) Standard 213 nC 64ns/229ns 400V, 75A, 10Ohm, 15V 101 ns -40°C ~ 175°C (TJ) Through Hole
RGS00TS65EHRC11

RGS00TS65EHRC11

8US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,293 -

RFQ

RGS00TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 88 A 150 A 2.1V @ 15V, 50A 326 W - Standard 58 nC 36ns/115ns 400V, 50A, 10Ohm, 15V 113 ns -40°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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