Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGT80TS65DGC13

RGT80TS65DGC13

5US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
2,654 -

RFQ

RGT80TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 120 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/119ns 400V, 40A, 10Ohm, 15V 236 ns -40°C ~ 175°C (TJ) Through Hole
RGWX5TS65EHRC11

RGWX5TS65EHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,978 -

RFQ

RGWX5TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 59ns/243ns 400V, 37.5A, 10Ohm, 15V 100 ns -40°C ~ 175°C (TJ) Through Hole
RGSX5TS65EHRC11

RGSX5TS65EHRC11

8S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor
2,927 -

RFQ

RGSX5TS65EHRC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 114 A 225 A 2.15V @ 15V, 75A 404 W 3.44mJ (on), 1.9mJ (off) Standard 79 nC 43ns/113ns 400V, 75A, 10Ohm, 15V 116 ns -40°C ~ 175°C (TJ) Through Hole
RGW60TS65CHRC11

RGW60TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,509 -

RFQ

RGW60TS65CHRC11

Ficha técnica

Tube - Active - 650 V 64 A 120 A 1.9V @ 15V, 30A 178 W 70µJ (on), 220µJ (off) Standard 84 nC 37ns/91ns 400V, 15A, 10Ohm, 15V 34 ns -40°C ~ 175°C (TJ) Through Hole
RGW80TS65CHRC11

RGW80TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,369 -

RFQ

RGW80TS65CHRC11

Ficha técnica

Tube - Active - 650 V 81 A 160 A 1.9V @ 15V, 40A 214 W 120µJ (on), 340µJ (off) Standard 110 nC 43ns/145ns 400V, 20A, 10Ohm, 15V 33 ns -40°C ~ 175°C (TJ) Through Hole
RGW00TS65CHRC11

RGW00TS65CHRC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,012 -

RFQ

RGW00TS65CHRC11

Ficha técnica

Tube - Active - 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W 180µJ (on), 420µJ (off) Standard 141 nC 49ns/180ns 400V, 25A, 10Ohm, 15V 33 ns -40°C ~ 175°C (TJ) Through Hole
RGT8BM65DTL

RGT8BM65DTL

IGBT 650V 8A 62W TO-252

Rohm Semiconductor
3,679 -

RFQ

RGT8BM65DTL

Ficha técnica

Cut Tape (CT) - Not For New Designs Trench Field Stop 650 V 8 A 12 A 2.1V @ 15V, 4A 62 W - Standard 13.5 nC 17ns/69ns 400V, 4A, 50Ohm, 15V 40 ns -40°C ~ 175°C (TJ) Surface Mount
RGTH00TS65GC13

RGTH00TS65GC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor
2,553 -

RFQ

RGTH00TS65GC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW40TK65DGVC11

RGW40TK65DGVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,389 -

RFQ

RGW40TK65DGVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 27 A 80 A 1.9V @ 15V, 20A 61 W - Standard 59 nC 33ns/76ns 400V, 20A, 10Ohm, 15V 92 ns -40°C ~ 175°C (TJ) Through Hole
RGTH40TS65DGC11

RGTH40TS65DGC11

IGBT 650V 40A 144W TO-247N

Rohm Semiconductor
3,499 -

RFQ

RGTH40TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 40 A 80 A 2.1V @ 15V, 20A 144 W - Standard 40 nC 22ns/73ns 400V, 20A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGTH60TS65DGC11

RGTH60TS65DGC11

IGBT 650V 58A 194W TO-247N

Rohm Semiconductor
3,720 -

RFQ

RGTH60TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGT60TS65DGC11

RGT60TS65DGC11

IGBT 650V 55A 194W TO-247N

Rohm Semiconductor
129 -

RFQ

RGT60TS65DGC11

Ficha técnica

Tube,Tube - Not For New Designs Trench Field Stop 650 V 55 A 90 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 29ns/100ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGT50TS65DGC11

RGT50TS65DGC11

IGBT 650V 48A 174W TO-247N

Rohm Semiconductor
431 -

RFQ

RGT50TS65DGC11

Ficha técnica

Tube,Tube - Not For New Designs Trench Field Stop 650 V 48 A 75 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/88ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGTH80TS65DGC11

RGTH80TS65DGC11

IGBT 650V 70A 234W TO-247N

Rohm Semiconductor
3,076 -

RFQ

RGTH80TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 160 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGTH60TS65GC11

RGTH60TS65GC11

IGBT 650V 58A 197W TO-247N

Rohm Semiconductor
3,565 -

RFQ

RGTH60TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 197 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH60TS65GC13

RGTH60TS65GC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor
3,389 -

RFQ

RGTH60TS65GC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW40TK65GVC11

RGW40TK65GVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
2,203 -

RFQ

RGW40TK65GVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 27 A 80 A 1.9V @ 15V, 20A 61 W 330µJ (on), 300µJ (off) Standard 59 nC 33ns/76ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH00TS65DGC11

RGTH00TS65DGC11

IGBT 650V 85A 277W TO-247N

Rohm Semiconductor
2,031 -

RFQ

RGTH00TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V 54 ns -40°C ~ 175°C (TJ) Through Hole
RGTH60TS65DGC13

RGTH60TS65DGC13

HIGH-SPEED SWITCHING TYPE, 650V

Rohm Semiconductor
2,789 -

RFQ

RGTH60TS65DGC13

Ficha técnica

Tube - Active Trench Field Stop 650 V 58 A 120 A 2.1V @ 15V, 30A 194 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGWX5TS65GC11

RGWX5TS65GC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
3,683 -

RFQ

RGWX5TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 132 A 300 A 1.9V @ 15V, 75A 348 W - Standard 213 nC 64ns/229ns 400V, 75A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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