Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGCL80TK60DGC11

RGCL80TK60DGC11

IGBT

Rohm Semiconductor
448 -

RFQ

RGCL80TK60DGC11

Ficha técnica

Tube - Active Trench Field Stop 600 V 35 A 160 A 1.8V @ 15V, 40A 57 W 1.11mJ (on), 1.68mJ (off) Standard 98 nC 53ns/227ns 400V, 40A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGW00TS65GC11

RGW00TS65GC11

650V 50A FIELD STOP TRENCH IGBT

Rohm Semiconductor
439 -

RFQ

RGW00TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 96 A 200 A 1.9V @ 15V, 50A 254 W 1.18mJ (on), 960µJ (off) Standard 141 nC 52ns/180ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV00TS65GC11

RGTV00TS65GC11

650V 50A FIELD STOP TRENCH IGBT

Rohm Semiconductor
324 -

RFQ

RGTV00TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 95 A 200 A 1.9V @ 15V, 50A 276 W 1.17mJ (on), 940µJ (off) Standard 104 nC 41ns/142ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH50TK65DGC11

RGTH50TK65DGC11

IGBT

Rohm Semiconductor
450 -

RFQ

RGTH50TK65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 26 A 100 A 2.1V @ 15V, 25A 59 W - Standard 49 nC 27ns/94ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGTH80TK65GC11

RGTH80TK65GC11

IGBT

Rohm Semiconductor
450 -

RFQ

RGTH80TK65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 31 A 160 A 2.1V @ 15V, 40A 66 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW80TK65GVC11

RGW80TK65GVC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor
450 -

RFQ

RGW80TK65GVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 39 A 160 A 1.9V @ 15V, 40A 81 W 760µJ (on), 720µJ (off) Standard 110 nC 44ns/143ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH60TK65DGC11

RGTH60TK65DGC11

IGBT

Rohm Semiconductor
403 -

RFQ

RGTH60TK65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 28 A 120 A 2.1V @ 15V, 30A 61 W - Standard 58 nC 27ns/105ns 400V, 30A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGW40TS65DGC11

RGW40TS65DGC11

650V 20A FIELD STOP TRENCH IGBT

Rohm Semiconductor
450 -

RFQ

Tube - Active Trench Field Stop 650 V 40 A 80 A 1.9V @ 15V, 20A 136 W 330µJ (on), 300µJ (off) Standard 59 nC 33ns/76ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TK65GVC11

RGW50TK65GVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
450 -

RFQ

Tube - Active Trench Field Stop 650 V 30 A 100 A 1.9V @ 15V, 25A 67 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV80TS65GC11

RGTV80TS65GC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor
450 -

RFQ

Tube - Active Trench Field Stop 650 V 78 A 160 A 1.9V @ 15V, 40A 234 W 1.02mJ (on), 710µJ (off) Standard 81 nC 39ns/113ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TS65DGC11

RGW50TS65DGC11

650V 25A FIELD STOP TRENCH IGBT

Rohm Semiconductor
446 -

RFQ

Tube - Active Trench Field Stop 650 V 50 A 100 A 1.9V @ 15V, 25A 156 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV80TK65GVC11

RGTV80TK65GVC11

2US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor
450 -

RFQ

Tube - Active Trench Field Stop 650 V 39 A 160 A 1.9V @ 15V, 40A 85 W 1.02mJ (on), 710µJ (off) Standard 81 nC 39ns/113ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TK65DGVC11

RGW50TK65DGVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor
450 -

RFQ

Tube - Active Trench Field Stop 650 V 30 A 100 A 1.9V @ 15V, 25A 67 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V 92 ns -40°C ~ 175°C (TJ) Through Hole
RGTH40TS65GC11

RGTH40TS65GC11

IGBT 650V 40A 144W TO-247N

Rohm Semiconductor
2,981 -

RFQ

RGTH40TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 40 A 80 A 2.1V @ 15V, 20A 144 W - Standard 40 nC 22ns/73ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH50TS65GC11

RGTH50TS65GC11

IGBT 650V 50A 174W TO-247N

Rohm Semiconductor
220 -

RFQ

RGTH50TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 50 A 100 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/94ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH50TS65DGC11

RGTH50TS65DGC11

IGBT 650V 50A 174W TO-247N

Rohm Semiconductor
188 -

RFQ

RGTH50TS65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 50 A 100 A 2.1V @ 15V, 25A 174 W - Standard 49 nC 27ns/94ns 400V, 25A, 10Ohm, 15V 58 ns -40°C ~ 175°C (TJ) Through Hole
RGTH80TS65GC11

RGTH80TS65GC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor
155 -

RFQ

RGTH80TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 70 A 160 A 2.1V @ 15V, 40A 234 W - Standard 79 nC 34ns/120ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTH00TS65GC11

RGTH00TS65GC11

IGBT 650V 85A 277W TO-247N

Rohm Semiconductor
2,792 -

RFQ

RGTH00TS65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 277 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGS30TSX2DGC11

RGS30TSX2DGC11

10US SHORT-CIRCUIT TOLERANCE, 12

Rohm Semiconductor
2,091 -

RFQ

RGS30TSX2DGC11

Ficha técnica

Tube - Active Trench Field Stop 1200 V 30 A 45 A 2.1V @ 15V, 15A 267 W 740µJ (on), 600µJ (off) Standard 41 nC 30ns/70ns 600V, 15A, 10Ohm, 15V 157 ns -40°C ~ 175°C (TJ) Through Hole
RGT16NS65DGTL

RGT16NS65DGTL

IGBT 650V 16A 94W TO-263S

Rohm Semiconductor
424 -

RFQ

RGT16NS65DGTL

Ficha técnica

Cut Tape (CT) - Not For New Designs Trench Field Stop 650 V 16 A 24 A 2.1V @ 15V, 8A 94 W - Standard 21 nC 13ns/33ns 400V, 8A, 10Ohm, 15V 42 ns -40°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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