Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT40GP60SG

APT40GP60SG

IGBT 600V 100A 543W D3PAK

Microsemi Corporation
3,081 -

RFQ

APT40GP60SG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 160 A 2.7V @ 15V, 40A 543 W 385µJ (on), 352µJ (off) Standard 135 nC 20ns/64ns 400V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT75GN60B2DQ3G

APT75GN60B2DQ3G

IGBT 600V 155A 536W TO264

Microsemi Corporation
2,166 -

RFQ

Tube - Obsolete - 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2500µJ (on), 2140µJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V - - Through Hole
APT25GP120BDQ1G

APT25GP120BDQ1G

IGBT 1200V 69A 417W TO247

Microchip Technology
3,589 -

RFQ

APT25GP120BDQ1G

Ficha técnica

Tube POWER MOS 7® Active PT 1200 V 69 A 90 A 3.9V @ 15V, 25A 417 W 500µJ (on), 440µJ (off) Standard 110 nC 12ns/70ns 600V, 25A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGPF30N30

FGPF30N30

IGBT 300V 46W TO220F

onsemi
3,446 -

RFQ

FGPF30N30

Ficha técnica

Tube - Obsolete - 300 V - 80 A 1.5V @ 15V, 10A 46 W - Standard 39 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGPF90N30

FGPF90N30

IGBT 300V 56.8W TO220F

onsemi
2,461 -

RFQ

FGPF90N30

Ficha técnica

Tube - Obsolete - 300 V - 220 A 1.55V @ 15V, 30A 56.8 W - Standard 93 nC - - - -55°C ~ 150°C (TJ) Through Hole
FGPF7N60LSDTU

FGPF7N60LSDTU

IGBT 600V 14A 45W TO220F

onsemi
3,970 -

RFQ

FGPF7N60LSDTU

Ficha técnica

Tube - Obsolete - 600 V 14 A 21 A 2V @ 15V, 7A 45 W 270µJ (on), 3.8mJ (off) Standard 24 nC 120ns/410ns 300V, 7A, 470Ohm, 15V 65 ns -55°C ~ 150°C (TJ) Through Hole
FGPF120N30TU

FGPF120N30TU

IGBT 300V 120A 60W TO220F

onsemi
2,468 -

RFQ

FGPF120N30TU

Ficha técnica

Tube - Obsolete - 300 V 120 A 180 A 1.4V @ 15V, 25A 60 W - Standard 112 nC - - - -55°C ~ 150°C (TJ) Through Hole
STGP19NC60WD

STGP19NC60WD

IGBT 600V 40A 125W TO220

STMicroelectronics
2,428 -

RFQ

STGP19NC60WD

Ficha técnica

Tube PowerMESH™ Obsolete - 600 V 40 A - 2.5V @ 15V, 12A 125 W 81µJ (on), 125µJ (off) Standard 53 nC 25ns/90ns 390V, 12A, 10Ohm, 15V 31 ns -55°C ~ 150°C (TJ) Through Hole
IXGH15N120CD1

IXGH15N120CD1

IGBT 1200V 30A 150W TO247

IXYS
2,737 -

RFQ

IXGH15N120CD1

Ficha técnica

Bulk - Active - 1200 V 30 A 60 A 3.8V @ 15V, 15A 150 W 1.05mJ (off) Standard 69 nC 25ns/150ns 960V, 15A, 10Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Through Hole
IXRH40N120

IXRH40N120

IGBT 1200V 55A 300W TO247AD

IXYS
2,400 -

RFQ

IXRH40N120

Ficha técnica

Bulk - Obsolete NPT 1200 V 55 A - 2.7V @ 15V, 30A 300 W 3mJ (on), 700µJ (off) Standard 90 nC - 600V, 35A, 15Ohm, 15V 2.1 µs -55°C ~ 150°C (TJ) Through Hole
FGL40N120ANTU

FGL40N120ANTU

IGBT NPT 1200V 64A TO264-3

onsemi
3,790 -

RFQ

FGL40N120ANTU

Ficha técnica

Tube - Obsolete NPT 1200 V 64 A 160 A 3.2V @ 15V, 40A 500 W 2.3mJ (on), 1.1mJ (off) Standard 220 nC 15ns/110ns 600V, 40A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGPF30N30DTU

FGPF30N30DTU

IGBT 300V 46W TO220F

onsemi
3,751 -

RFQ

FGPF30N30DTU

Ficha técnica

Tube - Obsolete - 300 V - 80 A 1.5V @ 15V, 10A 46 W - Standard 39 nC - - 21 ns -55°C ~ 150°C (TJ) Through Hole
FID35-06C

FID35-06C

IGBT 600V 38A 125W I4PAC5

IXYS
3,382 -

RFQ

FID35-06C

Ficha técnica

Tube - Active NPT 600 V 38 A - 2.4V @ 15V, 25A 125 W 1.1mJ (on), 600µJ (off) Standard 140 nC - 300V, 25A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
FID36-06D

FID36-06D

IGBT 600V 38A 125W I4PAC5

IXYS
3,659 -

RFQ

FID36-06D

Ficha técnica

Tube - Active NPT 600 V 38 A - 2.4V @ 15V, 25A 125 W 1.1mJ (on), 600µJ (off) Standard 140 nC - 300V, 25A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
FID60-06D

FID60-06D

IGBT 600V 65A 200W I4PAC5

IXYS
2,148 -

RFQ

FID60-06D

Ficha técnica

Tube - Obsolete NPT 600 V 65 A - 2V @ 15V, 30A 200 W 1mJ (on), 1.4mJ (off) Standard 120 nC - 300V, 30A, 22Ohm, 15V 70 ns -55°C ~ 150°C (TJ) Through Hole
FIO50-12BD

FIO50-12BD

IGBT 1200V 50A 200W I4PAC5

IXYS
3,765 -

RFQ

FIO50-12BD

Ficha técnica

Tube - Obsolete NPT 1200 V 50 A - 2.6V @ 15V, 30A 200 W 4.6mJ (on), 2.2mJ (off) Standard 150 nC - 600V, 30A, 39Ohm, 15V 150 ns -55°C ~ 150°C (TJ) Through Hole
IXBH14N250

IXBH14N250

IGBT 2500V TO247AD

IXYS
2,380 -

RFQ

Tube - Active - 2500 V - - - - - Standard - - - - - Through Hole
IXBH14N250A

IXBH14N250A

IGBT 2500V TO247AD

IXYS
2,606 -

RFQ

Tube - Active - 2500 V - - - - - Standard - - - - - Through Hole
IXBH5N160G

IXBH5N160G

IGBT 1600V 5.7A 68W TO247AD

IXYS
3,891 -

RFQ

IXBH5N160G

Ficha técnica

Tube BIMOSFET™ Active - 1600 V 5.7 A - 7.2V @ 15V, 3A 68 W - Standard 26 nC - 960V, 3A, 47Ohm, 10V - -55°C ~ 150°C (TJ) Through Hole
IXBH9N160G

IXBH9N160G

IGBT 1600V 9A 100W TO247AD

IXYS
3,636 -

RFQ

IXBH9N160G

Ficha técnica

Tube BIMOSFET™ Active - 1600 V 9 A 10 A 7V @ 15V, 5A 100 W - Standard 34 nC - 960V, 5A, 27Ohm, 10V - -55°C ~ 150°C (TJ) Through Hole
Total 4915 Record«Prev1... 2526272829303132...246Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario