Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRGS14C40LPBF

IRGS14C40LPBF

IRGS14C40 - DISCRETE IGBT WITHOU

International Rectifier
3,629 -

RFQ

IRGS14C40LPBF

Ficha técnica

Bulk - Obsolete - 430 V 20 A - 1.75V @ 5V, 14A 125 W - Logic 27 nC 900ns/6µs - - -40°C ~ 175°C (TJ) Surface Mount
IRG4PH40UD2-EP

IRG4PH40UD2-EP

IRG4PH40 - DISCRETE IGBT WITH AN

International Rectifier
2,373 -

RFQ

Bulk - Obsolete - 1200 V 41 A 82 A 3.1V @ 15V, 21A 160 W 1.95mJ (on), 1.71mJ (off) Standard 100 nC 22ns/100ns 800V, 21A, 10Ohm, 15V 50 ns -55°C ~ 150°C (TJ) Through Hole
IHW20N65R5

IHW20N65R5

INSULATED GATE BIPOLAR TRANSISTO

Infineon Technologies
2,979 -

RFQ

IHW20N65R5

Ficha técnica

Bulk * Active Trench Field Stop 650 V 40 A 60 A 1.7V @ 15V, 20A 150 W - Standard 97 nC 24ns/250ns 400V, 10A, 20Ohm, 15V 82 ns -40°C ~ 175°C (TJ) Through Hole
IKZ50N65NH5XKSA

IKZ50N65NH5XKSA

IKZ50N65 - DISCRETE IGBT WITH AN

Infineon Technologies
3,778 -

RFQ

IKZ50N65NH5XKSA

Ficha técnica

Bulk * Active Trench Field Stop 650 V 85 A 200 A 2.1V @ 15V, 50A 273 W 350µJ (on), 200µJ (off) Standard 109 nC 22ns/252ns 400V, 25A, 15Ohm, 15V 46 ns -40°C ~ 175°C (TJ) Through Hole
IGP20N60H3

IGP20N60H3

IGP20N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,951 -

RFQ

IGP20N60H3

Ficha técnica

Bulk * Active Trench Field Stop 600 V 40 A 80 A 2.4V @ 15V, 20A 170 W - Standard 120 nC 16ns/194ns 400V, 20A, 14.6Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IRG4PSC71KDPBF

IRG4PSC71KDPBF

IRG4PSC71 - DISCRETE IGBT WITH A

International Rectifier
2,423 -

RFQ

IRG4PSC71KDPBF

Ficha técnica

Bulk - Obsolete - 600 V 85 A 200 A 2.3V @ 15V, 60A 350 W 3.95mJ (on), 2.33mJ (off) Standard 340 nC 82ns/282ns 480V, 60A, 5Ohm, 15V 82 ns -55°C ~ 150°C (TJ) Through Hole
IGW50N60T

IGW50N60T

IGW50N60 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,262 -

RFQ

IGW50N60T

Ficha técnica

Bulk TrenchStop™ Active Trench Field Stop 600 V 90 A 150 A 2V @ 15V, 50A 333 W 1.2mJ (on), 1.4mJ (off) Standard 310 nC 26ns/299ns 400V, 50A, 7Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IKP20N65F5

IKP20N65F5

IKP20N65 - DISCRETE IGBT WITH AN

Infineon Technologies
2,040 -

RFQ

IKP20N65F5

Ficha técnica

Bulk TrenchStop™ 5 Active Trench Field Stop 650 V 42 A 60 A 2.1V @ 15V, 20A 125 W 160µJ (on), 60µJ (off) Standard 48 nC 20ns/165ns 400V, 10A, 32Ohm, 15V 53 ns -40°C ~ 175°C (TJ) Through Hole
IGTH10N50

IGTH10N50

N-CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
3,414 -

RFQ

IGTH10N50

Ficha técnica

Bulk - Active - 500 V 10 A - - - - Standard - - - - - Through Hole
IGTM20N50

IGTM20N50

N-CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
2,949 -

RFQ

IGTM20N50

Ficha técnica

Bulk - Active - 500 V 20 A - - - - Standard - - - - - Through Hole
IRGP20B120U-EP

IRGP20B120U-EP

IRGP20B120 - DISCRETE IGBT WITHO

International Rectifier
2,503 -

RFQ

Bulk - Obsolete NPT 1200 V 40 A 120 A 4.85V @ 15V, 40A 300 W 850µJ (on), 425µJ (off) Standard 169 nC - 600V, 20A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKB15N60T

IKB15N60T

IKB15N60 - DISCRETE IGBT WITH AN

Infineon Technologies
3,670 -

RFQ

IKB15N60T

Ficha técnica

Bulk * Active Trench Field Stop 600 V 26 A 45 A 2.05V @ 15V, 15A 130 W - Standard 87 nC 17ns/188ns 400V, 15A, 15Ohm, 15V 34 ns -40°C ~ 175°C (TJ) Surface Mount
NGD15N41ACLT4G

NGD15N41ACLT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
2,841 -

RFQ

NGD15N41ACLT4G

Ficha técnica

Bulk - Obsolete - 440 V 15 A 50 A 2.2V @ 4V, 10A 107 W - Logic - -/4µs 300V, 6.5A, 1kOhm - -55°C ~ 175°C (TJ) Surface Mount
IRGS4062DPBF

IRGS4062DPBF

IRGS4062 - IGBT WITH ULTRAFAST S

International Rectifier
3,194 -

RFQ

IRGS4062DPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

IRG4BC30 - DISCRETE IGBT WITH AN

Infineon Technologies
3,448 -

RFQ

IRG4BC30FD-SPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC30FPBF

IRG4BC30FPBF

IRG4BC30F - 600V FAST 1-8 KHZ DI

Infineon Technologies
3,658 -

RFQ

IRG4BC30FPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4PC50KDPBF

IRG4PC50KDPBF

IRG4PC50 - DISCRETE IGBT WITH AN

International Rectifier
3,948 -

RFQ

IRG4PC50KDPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IKB40N65EF5ATMA1

IKB40N65EF5ATMA1

IKB40N65 - INDUSTRY 14

Infineon Technologies
2,763 -

RFQ

IKB40N65EF5ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRGP4650D-EPBF

IRGP4650D-EPBF

IRGP4650D - IGBT WITH ANTI-PARAL

International Rectifier
3,973 -

RFQ

IRGP4650D-EPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRG4BC20SPBF

IRG4BC20SPBF

IRG4BC20 - DISCRETE IGBT WITHOUT

Infineon Technologies
3,576 -

RFQ

IRG4BC20SPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 4915 Record«Prev1... 240241242243244245246Next»
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario