Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
AUIRG4BC30SSTRL

AUIRG4BC30SSTRL

IGBT 600V 34A 100W D2PAK

Infineon Technologies
2,889 -

RFQ

AUIRG4BC30SSTRL

Ficha técnica

Tape & Reel (TR) - Active - 600 V 34 A 68 A 1.6V @ 15V, 18A 100 W 260µJ (on), 3.45mJ (off) Standard 50 nC 22ns/540ns 480V, 18A, 23Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXGA12N120A3

IXGA12N120A3

IGBT 1200V 22A 100W TO263

IXYS
3,515 -

RFQ

IXGA12N120A3

Ficha técnica

Tube GenX3™ Active PT 1200 V 22 A 60 A 3V @ 15V, 12A 100 W - Standard 20.4 nC - - - -55°C ~ 150°C (TJ) Surface Mount
IXGH12N120A3

IXGH12N120A3

IGBT 1200V 22A 100W TO247

IXYS
2,908 -

RFQ

IXGH12N120A3

Ficha técnica

Tube GenX3™ Active PT 1200 V 22 A 60 A 3V @ 15V, 12A 100 W - Standard 20.4 nC - - - -55°C ~ 150°C (TJ) Through Hole
SGB15N120ATMA1

SGB15N120ATMA1

IGBT 1200V 30A 198W TO263-3

Infineon Technologies
3,996 -

RFQ

SGB15N120ATMA1

Ficha técnica

Tape & Reel (TR),Bulk - Last Time Buy NPT 1200 V 30 A 52 A 3.6V @ 15V, 15A 198 W 1.9mJ Standard 130 nC 18ns/580ns 800V, 15A, 33Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT20GN60BG

APT20GN60BG

IGBT 600V 40A 136W TO247

Microchip Technology
3,254 -

RFQ

APT20GN60BG

Ficha técnica

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
AOK60B65M3

AOK60B65M3

IGBT 650V 60A TO247

Alpha & Omega Semiconductor Inc.
2,281 -

RFQ

AOK60B65M3

Ficha técnica

Tube Alpha IGBT™ Active - 650 V 120 A 180 A 2.45V @ 15V, 60A 500 W 2.6mJ (on), 1.3mJ (off) Standard 106 nC 44ns/166ns 400V, 60A, 5Ohm, 15V 346 ns -55°C ~ 175°C (TJ) Through Hole
STGW40H65FB

STGW40H65FB

IGBT 650V 80A 283W TO247

STMicroelectronics
3,635 -

RFQ

STGW40H65FB

Ficha técnica

Tube - Active Trench Field Stop 650 V 80 A 160 A 2.3V @ 15V, 40A 283 W 498mJ (on), 363mJ (off) Standard 210 nC 40ns/142ns 400V, 40A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYP30N65C3

IXYP30N65C3

DISC IGBT XPT-GENX3 TO-220AB/FP

IXYS
3,645 -

RFQ

Tube GenX3™, XPT™ Active PT 650 V 60 A 118 A 2.7V @ 15V, 30A 270 W 1mJ (on), 270µJ (off) Standard 44 nC 21ns/75ns 400V, 30A, 10Ohm, 15V 42 ns -55°C ~ 175°C (TJ) Through Hole
IGZ50N65H5XKSA1

IGZ50N65H5XKSA1

IGBT TRENCH 650V 85A TO247-4

Infineon Technologies
3,379 -

RFQ

IGZ50N65H5XKSA1

Ficha técnica

Bulk,Tube TrenchStop™ 5 Active Trench 650 V 85 A 200 A 2.1V @ 15V, 50A 273 W 410µJ (on), 190µJ (off) Standard 109 nC 20ns/250ns 400V, 25A, 12Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
MIW40N120-BP

MIW40N120-BP

IGBT 1200V 40A TO-247

Micro Commercial Co
3,963 -

RFQ

MIW40N120-BP

Ficha técnica

Tube - Active Trench Field Stop 1200 V 80 A 160 A 2.4V @ 15V, 40A 277 W 3.3mJ (on), 1.4mJ (off) Standard 239 nC 62ns/265ns 600V, 40A, 10Ohm, 15V 80 ns -55°C ~ 150°C (TJ) Through Hole
GT50N322A

GT50N322A

PB-F IGBT / TRANSISTOR TO-3PN IC

Toshiba Semiconductor and Storage
3,676 -

RFQ

GT50N322A

Ficha técnica

Tube - Active - 1000 V 50 A 120 A 2.8V @ 15V, 60A 156 W - Standard - - - 800 ns 150°C (TJ) Through Hole
SGP15N120XKSA1

SGP15N120XKSA1

IGBT 1200V 30A 198W TO220-3

Infineon Technologies
2,493 -

RFQ

SGP15N120XKSA1

Ficha técnica

Tube - Last Time Buy NPT 1200 V 30 A 52 A 3.6V @ 15V, 15A 198 W 1.9mJ Standard 130 nC 18ns/580ns 800V, 15A, 33Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGA20N120A3-TRL

IXGA20N120A3-TRL

IXGA20N120A3 TRL

IXYS
3,436 -

RFQ

Tape & Reel (TR) GenX3™ Active PT 1200 V 40 A 120 A 2.5V @ 15V, 20A 180 W 2.85mJ (on), 6.47mJ (off) Standard 50 nC 16ns/290ns 960V, 20A, 10Ohm, 15V 44 ns -55°C ~ 150°C (TJ) Surface Mount
STGW15M120DF3

STGW15M120DF3

IGBT 1200V 30A 259W

STMicroelectronics
3,700 -

RFQ

STGW15M120DF3

Ficha técnica

Tube - Active Trench Field Stop 1200 V 30 A 60 A 2.3V @ 15V, 15A 259 W 550µJ (on), 850µJ (off) Standard 226 nC 26ns/122ns 600V, 15A, 22Ohm, 15V 270 ns -55°C ~ 175°C (TJ) Through Hole
GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage
2,194 -

RFQ

GT50JR22(STA1,E,S)

Ficha técnica

Tube - Active - 600 V 50 A 100 A 2.2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) Through Hole
GT50JR21(STA1,E,S)

GT50JR21(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Toshiba Semiconductor and Storage
3,870 -

RFQ

GT50JR21(STA1,E,S)

Ficha técnica

Tube - Active - 600 V 50 A 100 A 2V @ 15V, 50A 230 W - Standard - - - - 175°C (TJ) Through Hole
NGTB20N120IHTG

NGTB20N120IHTG

IGBT 1200V 20A TO247

onsemi
2,766 -

RFQ

Tube - Not For New Designs - - - - - - - - - - - - - -
IXYP20N65C3

IXYP20N65C3

DISC IGBT XPT-GENX3 TO-220AB/FP

IXYS
2,222 -

RFQ

Tube - Active - 650 V 50 A 105 A - 200 W - - 30 nC - - 135 ns -55°C ~ 175°C (TJ) -
FGH75T65UPD-F155

FGH75T65UPD-F155

650V,75A FIELD STOP TRENCH IGBT

onsemi
2,810 -

RFQ

FGH75T65UPD-F155

Ficha técnica

Tube - Not For New Designs Trench Field Stop 650 V 150 A 225 A 2.3V @ 15V, 75A 375 W 3.68mJ (on), 1.6mJ (off) Standard 68 nC 42ns/216ns 400V, 75A, 3Ohm, 15V 85 ns -55°C ~ 175°C (TJ) Through Hole
IHW30N110R3XKSA1

IHW30N110R3XKSA1

IGBT TO-247-3

Infineon Technologies
3,383 -

RFQ

Tube * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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