Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRGS15B60KDPBF

IRGS15B60KDPBF

IGBT WITH RECOVERY DIODE

International Rectifier
2,272 -

RFQ

IRGS15B60KDPBF

Ficha técnica

Tube - Obsolete NPT 600 V 31 A 62 A 2.2V @ 15V, 15A 208 W 220µJ (on), 340µJ (off) Standard 56 nC 34ns/184ns 400V, 15A, 22Ohm, 15V 92 ns -55°C ~ 150°C (TJ) Surface Mount
IFS150B12N3T4_B31

IFS150B12N3T4_B31

IGBT, 150A, 1200V, N-CHANNEL

Infineon Technologies
2,190 -

RFQ

IFS150B12N3T4_B31

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IGP03N120H2

IGP03N120H2

IGBT, 9.6A, 1200V, N-CHANNEL

Infineon Technologies
2,132 -

RFQ

IGP03N120H2

Ficha técnica

Bulk - Active - 1200 V 9.6 A 9.9 A 2.8V @ 15V, 3A 62.5 W 290µJ Standard 22 nC 9.2ns/281ns 800V, 3A, 82Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
IGB30N60H3XKSA1

IGB30N60H3XKSA1

HIGH SPEED 600V, 30A IGBT

Infineon Technologies
2,092 -

RFQ

IGB30N60H3XKSA1

Ficha técnica

Bulk * Active Trench Field Stop 600 V 60 A 120 A 2.4V @ 15V, 30A 187 W - Standard 165 nC 18ns/207ns 400V, 30A, 10.5Ohm, 15V - -40°C ~ 175°C (TJ) Surface Mount
IGP20N60H3ATMA1

IGP20N60H3ATMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
2,063 -

RFQ

IGP20N60H3ATMA1

Ficha técnica

Bulk * Active Trench Field Stop 600 V 40 A 80 A 2.4V @ 15V, 20A 170 W - Standard 120 nC 16ns/194ns 400V, 20A, 14.6Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IGT6D11

IGT6D11

10A, 400V IGBT FOR MOTOR DRIVE

Harris Corporation
2,038 -

RFQ

IGT6D11

Ficha técnica

Bulk - Active - 400 V - - - - - Standard - - - - - Through Hole
HGT1S7N60C3D

HGT1S7N60C3D

IGBT, 14A, 600V, N-CHANNEL

Fairchild Semiconductor
2,004 -

RFQ

HGT1S7N60C3D

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2V @ 15V, 7A 60 W - Standard 38 nC - - 25 ns -40°C ~ 150°C (TJ) Through Hole
BUP403

BUP403

IGBT, 600V, N-CHANNEL

Infineon Technologies
3,903 -

RFQ

BUP403

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HGTG20N60B3_NL

HGTG20N60B3_NL

IGBT, 40A, 600V, N-CHANNEL

Fairchild Semiconductor
3,506 -

RFQ

HGTG20N60B3_NL

Ficha técnica

Bulk - Active - 600 V 40 A 160 A 2V @ 15V, 20A 165 W - Standard 135 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGTG30N60C3D_NL

HGTG30N60C3D_NL

IGBT, 63A, 600V, N-CHANNEL

Fairchild Semiconductor
3,819 -

RFQ

HGTG30N60C3D_NL

Ficha técnica

Bulk - Active - 600 V 63 A 252 A 1.8V @ 15V, 30A 208 W - Standard 250 nC - - 60 ns -40°C ~ 150°C (TJ) Through Hole
IKW25N120T2XK

IKW25N120T2XK

IGBT, 50A, 1200V, N-CHANNEL

Infineon Technologies
2,577 -

RFQ

IKW25N120T2XK

Ficha técnica

Bulk TrenchStop® Active Trench Field Stop 1200 V 50 A 100 A 2.2V @ 15V, 25A 349 W - Standard 120 nC 27ns/265ns 600V, 25A, 16.4Ohm, 15V 195 ns -40°C ~ 175°C (TJ) Through Hole
IKD04N60R6EDV1

IKD04N60R6EDV1

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
3,429 -

RFQ

IKD04N60R6EDV1

Ficha técnica

Bulk * Active Trench Field Stop 600 V 8 A 12 A 2.1V @ 15V, 4A 75 W 90µJ (on), 150µJ (off) Standard 27 nC 14ns/146ns 400V, 4A, 43Ohm, 15V 43 ns -40°C ~ 175°C (TJ) Surface Mount
HGTP14N44G3VL

HGTP14N44G3VL

IGBT, 27A, 490V, N-CHANNEL

Fairchild Semiconductor
3,412 -

RFQ

HGTP14N44G3VL

Ficha técnica

Bulk - Active - 490 V 27 A - 1.9V @ 4.5V, 8A 231 W - Logic - -/18µs 300V, 7.5A, 1kOhm, 5V - -40°C ~ 175°C (TJ) Through Hole
IKD04N60RBTMA1

IKD04N60RBTMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
2,772 -

RFQ

IKD04N60RBTMA1

Ficha técnica

Bulk TrenchStop® Active Trench 600 V 8 A 12 A 2.1V @ 15V, 4A 75 W 240µJ Standard 27 nC 14ns/146ns 400V, 4A, 43Ohm, 15V 43 ns -40°C ~ 175°C (TJ) Surface Mount
HGTP5N120CN

HGTP5N120CN

IGBT, 25A, 1200V, N-CHANNEL

Fairchild Semiconductor
3,627 -

RFQ

HGTP5N120CN

Ficha técnica

Bulk - Active NPT 1200 V 25 A 40 A 2.4V @ 15V, 5.5A 167 W 400µJ (on), 640µJ (off) Standard 75 nC 22ns/180ns 960V, 5.5A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKW03N120H2

IKW03N120H2

IGBT WITH ANTI-PARALLEL DIODE

Infineon Technologies
3,816 -

RFQ

IKW03N120H2

Ficha técnica

Bulk - Active - 1200 V 9.6 A 9.9 A 2.8V @ 15V, 3A 62.5 W 290µJ Standard 22 nC 9.2ns/281ns 800V, 3A, 82Ohm, 15V 42 ns -40°C ~ 150°C (TJ) Through Hole
IKW30N60DTP

IKW30N60DTP

HIGH SPEED IGBT

Infineon Technologies
2,202 -

RFQ

IKW30N60DTP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IKW40N65F5F

IKW40N65F5F

IGBT WITH ANTI-PARALLEL DIODE

Infineon Technologies
3,559 -

RFQ

IKW40N65F5F

Ficha técnica

Bulk * Active Trench Field Stop 650 V 74 A 120 A 2.1V @ 15V, 40A 255 W 360µJ (on), 100µJ (off) Standard 95 nC 19ns/160ns 400V, 20A, 15Ohm, 15V 60 ns -40°C ~ 175°C (TJ) Through Hole
IKW40TI20FKSA1

IKW40TI20FKSA1

IGBT, 75A, 1200V, N-CHANNEL

Infineon Technologies
3,190 -

RFQ

IKW40TI20FKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRG35B60PD-E

AUIRG35B60PD-E

AUTOMOTIVE ULTRAFAST SPEED IGBT

Infineon Technologies
3,273 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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