Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
FPF1C2P5MF07AM

FPF1C2P5MF07AM

IGBT MODULE 620V 39A 231W F1

onsemi
2,630 -

RFQ

FPF1C2P5MF07AM

Ficha técnica

Tray - Obsolete - Full Bridge Inverter 620 V 39 A 231 W 1.6V @ 15V, 30A 25 µA - Single Phase Bridge Rectifier No -40°C ~ 150°C (TJ) Chassis Mount
FPF2C8P2NL07A

FPF2C8P2NL07A

IGBT MODULE 650V 30A 135W F2

onsemi
2,876 -

RFQ

FPF2C8P2NL07A

Ficha técnica

Bulk,Tube - Obsolete Field Stop Three Phase 650 V 30 A 135 W 2.2V @ 15V, 30A 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
FPF2G120BF07AS

FPF2G120BF07AS

IGBT MODULE 650V 40A 156W F2

onsemi
2,322 -

RFQ

FPF2G120BF07AS

Ficha técnica

Tray,Tray - Obsolete Field Stop 3 Independent 650 V 40 A 156 W 2.2V @ 15V, 40A 250 µA - Standard Yes -40°C ~ 150°C (TJ) Through Hole
NXH80T120L2Q0SG

NXH80T120L2Q0SG

IGBT MODULE 1200V 65A 146W PIM20

onsemi
2,804 -

RFQ

Tray - Active - T-Type 1200 V 65 A 146 W 2.8V @ 15V, 80A 100 µA 1.99 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Through Hole
FPF2C110BI07AS2

FPF2C110BI07AS2

IGBT MODULE 650V 40A 300W F2

onsemi
3,221 -

RFQ

FPF2C110BI07AS2

Ficha técnica

Tray - Active - Half Bridge 650 V 40 A 300 W 2.3V @ 15V, 40A 250 µA - Standard Yes -40°C ~ 150°C Through Hole
NXH160T120L2Q2F2SG

NXH160T120L2Q2F2SG

PIM 1200V, 160A SPLIT TNP

onsemi
3,192 -

RFQ

NXH160T120L2Q2F2SG

Ficha técnica

Tray * Obsolete - - - - - - - - - - - -
NXH80B120H2Q0SG

NXH80B120H2Q0SG

PIM 1200V, 40A DUAL BOOST

onsemi
3,386 -

RFQ

NXH80B120H2Q0SG

Ficha técnica

Tray * Obsolete - - - - - - - - - - - -
FAM65CR51DZ2

FAM65CR51DZ2

IGBT MOD 650V 33A 160W APMCD-B16

onsemi
3,715 -

RFQ

FAM65CR51DZ2

Ficha técnica

Tube - Active - 2 Independent 650 V 33 A 160 W - - 4.86 nF @ 400 V Standard No -55°C ~ 150°C (TJ) Through Hole
FAM65HR51DS2

FAM65HR51DS2

IGBT MODULE 650V 33A 135W

onsemi
3,214 -

RFQ

FAM65HR51DS2

Ficha técnica

Tube - Active - Half Bridge Inverter 650 V 33 A 135 W - - 4.86 nF @ 400 V Standard No -55°C ~ 150°C (TJ) Through Hole
NXH80T120L2Q0S2G

NXH80T120L2Q0S2G

PIM 1200V 80A TNPC STAND

onsemi
2,926 -

RFQ

NXH80T120L2Q0S2G

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - -
FTOO3V43A1

FTOO3V43A1

IGBT MODULE PWR 3-PHASE

onsemi
2,472 -

RFQ

Tube * Obsolete - - - - - - - - - - - -
F59314548D

F59314548D

IGBT MODULE POWER IPM

onsemi
2,623 -

RFQ

Tray * Obsolete - - - - - - - - - - - -
SNXH100M95H3Q2F2PG

SNXH100M95H3Q2F2PG

IC MODULE PIM 100V

onsemi
3,762 -

RFQ

Tray - Obsolete Trench Field Stop Full Bridge Inverter 950 V 85 A 193 W 2.25V @ 15V, 150A 400 µA 9.546 nF @ 20 V Standard Yes 175°C (TJ) Chassis Mount
NXH350N100H4Q2F2PG

NXH350N100H4Q2F2PG

IC MODULE PIM 350A 1000V

onsemi
2,722 -

RFQ

NXH350N100H4Q2F2PG

Ficha técnica

Tray - Obsolete Trench Field Stop Three Level Inverter 1000 V 303 A 592 W 1.8V @ 15V, 375A 1 mA 24.146 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
SNXH80T120L2Q0P2G

SNXH80T120L2Q0P2G

IC MODULE PIM 1200V 80A

onsemi
2,325 -

RFQ

SNXH80T120L2Q0P2G

Ficha técnica

Tray - Active Trench Field Stop Three Level Inverter 1200 V 67 A 158 W 2.85V @ 15V, 80A 300 µA 19.4 nF @ 20 V Standard Yes 175°C (TJ) Chassis Mount
NXH350N100H4Q2F2SG

NXH350N100H4Q2F2SG

IC MODULE PIM 350A 1000V

onsemi
3,456 -

RFQ

NXH350N100H4Q2F2SG

Ficha técnica

Tray - Obsolete Trench Field Stop Three Level Inverter 1000 V 303 A 592 W 1.8V @ 15V, 375A 1 mA 24.146 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH80T120L2Q0S2TG

NXH80T120L2Q0S2TG

MODULE PIM 1200V 80A

onsemi
3,022 -

RFQ

Bulk - Obsolete - - - - - - - - - - - -
NXH160T120L2Q2F2S1G

NXH160T120L2Q2F2S1G

PIM POWER MODULE

onsemi
2,401 -

RFQ

NXH160T120L2Q2F2S1G

Ficha técnica

Tray - Active - Three Level Inverter 1200 V 181 A 500 W 2.7V @ 15V, 160A 500 µA 38.8 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH80B120H2Q0SNG

NXH80B120H2Q0SNG

PIM POWER MODULE

onsemi
2,938 -

RFQ

NXH80B120H2Q0SNG

Ficha técnica

Tray - Obsolete - Dual Boost Chopper 1200 V 41 A 103 W 2.5V @ 15V, 40A 200 µA 9.7 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
FPF2G160BF12A2P

FPF2G160BF12A2P

IGBT MODULE

onsemi
3,487 -

RFQ

Tray - Obsolete - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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