Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
NXH40B120MNQ0SNG

NXH40B120MNQ0SNG

80KW GENII 1200V 80MOHM SIC MOSF

onsemi
3,916 -

RFQ

Tray - Active - Dual Boost Chopper - - 118 W - - 3.227 nF @ 20 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH100B120H3Q0PTG

NXH100B120H3Q0PTG

IGBT MODULE 1200V 50A 186W 22PIM

onsemi
3,735 -

RFQ

NXH100B120H3Q0PTG

Ficha técnica

Tray - Active Trench Field Stop 2 Independent 1200 V 50 A 186 W 2.3V @ 15V, 50A 200 µA 9.075 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
NXH450B100H4Q2F2SG

NXH450B100H4Q2F2SG

1000V,75A FSIII IGBT, MID SPEED

onsemi
2,234 -

RFQ

NXH450B100H4Q2F2SG

Ficha técnica

Tray - Active - 2 Independent 1000 V 101 A 234 W 2.25V @ 15V, 150A 600 µA 9.342 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH240B120H3Q1PG

NXH240B120H3Q1PG

PIM Q1 3 CHANNEL IGBT+SIC BOOST

onsemi
3,443 -

RFQ

NXH240B120H3Q1PG

Ficha técnica

Tray - Active Trench Field Stop Triple, Dual - Common Source 1200 V 68 A 158 W 2V @ 15V, 80A 400 µA 18.151 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH300B100H4Q2F2PG

NXH300B100H4Q2F2PG

MASS MARKET 250KW 1500V Q2 3 LEV

onsemi
3,566 -

RFQ

NXH300B100H4Q2F2PG

Ficha técnica

Tray - Active Trench Field Stop Dual, Common Source 1118 V 73 A 194 W 2.25V @ 15V, 100A 800 µA 6.323 nF @ 20 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH300B100H4Q2F2SG

NXH300B100H4Q2F2SG

MASS MARKET 250KW 1500V Q2 3 LEV

onsemi
3,500 -

RFQ

NXH300B100H4Q2F2SG

Ficha técnica

Tray - Active Trench Field Stop Dual, Common Source 1118 V 73 A 194 W 2.25V @ 15V, 100A 800 µA 6.323 nF @ 20 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH450B100H4Q2F2PG

NXH450B100H4Q2F2PG

1000V,75A FSIII IGBT, MID SPEED

onsemi
3,740 -

RFQ

NXH450B100H4Q2F2PG

Ficha técnica

Tray - Active - 2 Independent 1000 V 101 A 234 W 2.25V @ 15V, 150A 600 µA 9.342 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH350N100H4Q2F2S1G

NXH350N100H4Q2F2S1G

IC PWR MODULE 1000V 350A PIM42

onsemi
3,197 -

RFQ

NXH350N100H4Q2F2S1G

Ficha técnica

Tray - Active Trench Field Stop Three Level Inverter 1000 V 303 A 276 W 2.3V @ 15V, 375A 1 mA 24.146 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH350N100H4Q2F2P1G

NXH350N100H4Q2F2P1G

IC PWR MODULE 1000V 350A PIM42

onsemi
3,419 -

RFQ

NXH350N100H4Q2F2P1G

Ficha técnica

Tray - Active Trench Field Stop Three Level Inverter 1000 V 303 A 276 W 2.3V @ 15V, 375A 1 mA 24.146 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH400N100H4Q2F2SG

NXH400N100H4Q2F2SG

MASS MARKET 250KW 1500V Q2 PACK

onsemi
2,177 -

RFQ

NXH400N100H4Q2F2SG

Ficha técnica

Tray - Active Trench Field Stop Three Level Inverter 1000 V 409 A 959 W 2.3V @ 15V, 400A 500 µA 26.093 nF @ 20 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH50M65L4Q1SG

NXH50M65L4Q1SG

Q1PACK 50A 650V

onsemi
2,142 -

RFQ

NXH50M65L4Q1SG

Ficha técnica

Tray - Active Trench Field Stop Full Bridge 650 V 48 A 86 W 2.22V @ 15V, 50A 300 µA 3.137 nF @ 20 V Standard Yes 175°C (TJ) Chassis Mount
NXH75M65L4Q1SG

NXH75M65L4Q1SG

Q1PACK 75A 650V

onsemi
3,996 -

RFQ

NXH75M65L4Q1SG

Ficha técnica

Tray - Active Trench Field Stop Half Bridge 650 V 59 A 86 W 2.22V @ 15V, 75A 300 µA 5.665 nF @ 30 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH25C120L2C2SG

NXH25C120L2C2SG

IGBT MODULE, CIB 1200 V, 25 A IG

onsemi
2,352 -

RFQ

NXH25C120L2C2SG

Ficha técnica

Tube - Active - Three Phase Inverter with Brake 1200 V 25 A 20 mW 2.4V @ 15V, 25A 250 µA 6.2 nF @ 20 V Three Phase Bridge Rectifier Yes -40°C ~ 150°C (TJ) Through Hole
NXH35C120L2C2S1G

NXH35C120L2C2S1G

IGBT MOD 1200V 35A 26DIP

onsemi
3,131 -

RFQ

Tube - Active - Three Phase Inverter with Brake 1200 V 35 A 20 mW 2.4V @ 15V, 35A 250 µA 8.33 nF @ 20 V Three Phase Bridge Rectifier Yes -40°C ~ 150°C (TJ) Through Hole
NXH75M65L4Q1PTG

NXH75M65L4Q1PTG

6KW H6.5 75A Q1PACK PRESS-FIT PI

onsemi
2,723 -

RFQ

NXH75M65L4Q1PTG

Ficha técnica

Tray - Active Trench Field Stop Half Bridge 650 V 59 A 86 W 2.22V @ 15V, 75A 300 µA 5.665 nF @ 30 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
NXH100B120H3Q0STG

NXH100B120H3Q0STG

IGBT MODULE 1200V 50A 186W PIM22

onsemi
3,001 -

RFQ

NXH100B120H3Q0STG

Ficha técnica

Tray - Active Trench Field Stop 2 Independent 1200 V 50 A 186 W 2.3V @ 15V, 50A 200 µA 9.075 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
NXH25T120L2Q1PG

NXH25T120L2Q1PG

PIM Q1 3 CHANNEL T-TYPE NPC 25A

onsemi
2,548 -

RFQ

NXH25T120L2Q1PG

Ficha técnica

Tray - Active - Three Phase Inverter 1200 V 25 A 81 W 2.5V @ 15V, 25A 300 µA 8.502 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH25T120L2Q1PTG

NXH25T120L2Q1PTG

PIM Q1 3 CHANNEL T-TYPE NPC 25A

onsemi
2,800 -

RFQ

NXH25T120L2Q1PTG

Ficha técnica

Tray - Active - Three Phase Inverter 1200 V 25 A 81 W 2.5V @ 15V, 25A 300 µA 8.502 nF @ 20 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
NXH027B120MNF2PTG

NXH027B120MNF2PTG

IGBT MODULE 1200V

onsemi
3,386 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - -
NXH50C120L2C2ES1G

NXH50C120L2C2ES1G

IGBT MOD 1200V 50A 26DIP

onsemi
3,225 -

RFQ

Tube - Active - Three Phase Inverter with Brake 1200 V 50 A 20 mW 2.4V @ 15V, 50A 250 µA 11.89 nF @ 20 V Three Phase Bridge Rectifier Yes -40°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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