Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM025NB04CR RLG

TSM025NB04CR RLG

MOSFET N-CH 40V 24A/161A 8PDFN

Taiwan Semiconductor Corporation
4,900 -

RFQ

TSM025NB04CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 161A (Tc) 10V 2.5mOhm @ 24A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 7150 pF @ 20 V - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM025NB04LCR RLG

TSM025NB04LCR RLG

MOSFET N-CH 40V 24A/161A 8PDFN

Taiwan Semiconductor Corporation
4,530 -

RFQ

TSM025NB04LCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 161A (Tc) 4.5V, 10V 2.5mOhm @ 24A, 10V 2.5V @ 250µA 112 nC @ 10 V ±20V 6435 pF @ 20 V - 3.1W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM480P06CP ROG

TSM480P06CP ROG

MOSFET P-CHANNEL 60V 20A TO252

Taiwan Semiconductor Corporation
8,567 -

RFQ

TSM480P06CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) Surface Mount
TSM4NB65CP ROG

TSM4NB65CP ROG

MOSFET N-CHANNEL 650V 4A TO252

Taiwan Semiconductor Corporation
2,456 -

RFQ

TSM4NB65CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3.37Ohm @ 2A, 10V 4.5V @ 250µA 13.46 nC @ 10 V ±30V 549 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM5NC50CP ROG

TSM5NC50CP ROG

MOSFET N-CHANNEL 500V 5A TO252

Taiwan Semiconductor Corporation
2,393 -

RFQ

TSM5NC50CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.38Ohm @ 2.4A, 10V 4.5V @ 250µA 15 nC @ 10 V ±30V 586 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N1R2CI C0G

TSM80N1R2CI C0G

MOSFET N-CH 800V 5.5A ITO220AB

Taiwan Semiconductor Corporation
2,264 -

RFQ

TSM80N1R2CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60N380CZ C0G

TSM60N380CZ C0G

MOSFET N-CHANNEL 600V 11A TO220

Taiwan Semiconductor Corporation
2,000 -

RFQ

TSM60N380CZ C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 20.5 nC @ 10 V ±30V 1040 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM160P02CS RLG

TSM160P02CS RLG

MOSFET P-CHANNEL 20V 11A 8SOP

Taiwan Semiconductor Corporation
2,747 -

RFQ

TSM160P02CS RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 1.8V, 4.5V 16mOhm @ 6A, 4.5V 1V @ 250µA 27 nC @ 4.5 V ±10V 2320 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N1R2CL C0G

TSM80N1R2CL C0G

MOSFET N-CH 800V 5.5A TO262S

Taiwan Semiconductor Corporation
3,432 -

RFQ

TSM80N1R2CL C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM900N10CH X0G

TSM900N10CH X0G

MOSFET N-CH 100V 15A TO251

Taiwan Semiconductor Corporation
3,556 -

RFQ

TSM900N10CH X0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 1480 pF @ 50 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM070NH04LCR RLG

TSM070NH04LCR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation
4,361 -

RFQ

TSM070NH04LCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 54A (Tc) 4.5V, 10V 7mOhm @ 27A, 10V 2.2V @ 250µA 23 nC @ 10 V ±16V 1446 pF @ 25 V - 46.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM7N90CI C0G

TSM7N90CI C0G

MOSFET N-CH 900V 7A ITO220AB

Taiwan Semiconductor Corporation
1,994 -

RFQ

TSM7N90CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1969 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
TQM070NB04CR RLG

TQM070NB04CR RLG

MOSFET N-CH 40V 15A/75A 8PDFNU

Taiwan Semiconductor Corporation
2,500 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 75A (Tc) 7V, 10V 7mOhm @ 15A, 10V 3.8V @ 250µA 42 nC @ 10 V ±20V 3125 pF @ 20 V - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
TSM70N900CP ROG

TSM70N900CP ROG

MOSFET N-CH 700V 4.5A TO252

Taiwan Semiconductor Corporation
2,458 -

RFQ

TSM70N900CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 4.5A (Tc) 10V 900mOhm @ 1.5A, 10V 4V @ 250µA 9.7 nC @ 10 V ±30V 482 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM70N750CP ROG

TSM70N750CP ROG

MOSFET N-CHANNEL 700V 6A TO252

Taiwan Semiconductor Corporation
4,688 -

RFQ

TSM70N750CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 750mOhm @ 1.8A, 10V 4V @ 250µA 10.7 nC @ 10 V ±30V 555 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM70N600CP ROG

TSM70N600CP ROG

MOSFET N-CHANNEL 700V 8A TO252

Taiwan Semiconductor Corporation
1,354 -

RFQ

TSM70N600CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM025NH04LCR RLG

TSM025NH04LCR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation
2,495 -

RFQ

TSM025NH04LCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PerFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.2V @ 250µA - ±16V - - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
TSM60NB260CI C0G

TSM60NB260CI C0G

MOSFET N-CH 600V 13A ITO220AB

Taiwan Semiconductor Corporation
2,917 -

RFQ

TSM60NB260CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 260mOhm @ 3.9A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1273 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB190CM2 RNG

TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

Taiwan Semiconductor Corporation
2,299 -

RFQ

TSM60NB190CM2 RNG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM60NB099CF C0G

TSM60NB099CF C0G

MOSFET N-CH 600V 38A ITO220S

Taiwan Semiconductor Corporation
941 -

RFQ

TSM60NB099CF C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 99mOhm @ 5.3A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 2587 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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