Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK6018DPM-00#T1

RJK6018DPM-00#T1

MOSFET N-CH 600V 30A TO3PFM

Renesas Electronics America Inc
3,719 -

RFQ

RJK6018DPM-00#T1

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 235mOhm @ 15A, 10V - 92 nC @ 10 V ±30V 4100 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
RJK6020DPK-00#T0

RJK6020DPK-00#T0

MOSFET N-CH 600V 32A TO3P

Renesas Electronics America Inc
3,768 -

RFQ

RJK6020DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Ta) 10V 175mOhm @ 16A, 10V - 121 nC @ 10 V ±30V 5150 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
RJK6026DPE-00#J3

RJK6026DPE-00#J3

MOSFET N-CH 600V 5A 4LDPAK

Renesas Electronics America Inc
3,683 -

RFQ

RJK6026DPE-00#J3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 2.4Ohm @ 2.5A, 10V - 14 nC @ 10 V ±30V 440 pF @ 25 V - 62.5W (Tc) 150°C (TJ) Surface Mount
RJK6032DPD-00#J2

RJK6032DPD-00#J2

MOSFET N-CH 600V 3A MP3A

Renesas Electronics America Inc
3,111 -

RFQ

RJK6032DPD-00#J2

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V - 9 nC @ 10 V ±30V 285 pF @ 25 V - 40.3W (Tc) 150°C (TJ) Surface Mount
RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

MOSFET N-CH 600V 3A TO251

Renesas Electronics America Inc
2,507 -

RFQ

RJK6032DPH-E0#T2

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V - 9 nC @ 10 V ±30V 285 pF @ 25 V - 40.3W (Tc) 150°C (TJ) Through Hole
RJL5012DPE-00#J3

RJL5012DPE-00#J3

MOSFET N-CH 500V 12A 4LDPAK

Renesas Electronics America Inc
3,202 -

RFQ

RJL5012DPE-00#J3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 700mOhm @ 6A, 10V - 27.8 nC @ 10 V ±30V 1050 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJL5012DPP-M0#T2

RJL5012DPP-M0#T2

MOSFET N-CH 500V 12A TO220FL

Renesas Electronics America Inc
2,488 -

RFQ

RJL5012DPP-M0#T2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Ta) 10V 700mOhm @ 6A, 10V - 27.8 nC @ 10 V ±30V 1050 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
RJL5014DPK-00#T0

RJL5014DPK-00#T0

MOSFET N-CH 500V 19A TO3P

Renesas Electronics America Inc
2,835 -

RFQ

RJL5014DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 400mOhm @ 9.5A, 10V - 43 nC @ 10 V ±30V 1700 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
RJL5020DPK-00#T0

RJL5020DPK-00#T0

MOSFET N-CH 500V 38A TO3P

Renesas Electronics America Inc
2,709 -

RFQ

RJL5020DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 38A (Ta) 10V 135mOhm @ 19A, 10V - 140 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
RJL6012DPE-00#J3

RJL6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics America Inc
3,043 -

RFQ

RJL6012DPE-00#J3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 1.1Ohm @ 5A, 10V - 28 nC @ 10 V ±30V 1050 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJL6013DPE-00#J3

RJL6013DPE-00#J3

MOSFET N-CH 600V 11A 4LDPAK

Renesas Electronics America Inc
3,086 -

RFQ

RJL6013DPE-00#J3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 810mOhm @ 5.5A, 10V - 38 nC @ 10 V ±30V 1400 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJL6018DPK-00#T0

RJL6018DPK-00#T0

MOSFET N-CH 600V 27A TO3P

Renesas Electronics America Inc
2,303 -

RFQ

RJL6018DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Ta) 10V 265mOhm @ 13.5A, 10V - 98 nC @ 10 V ±30V 3830 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
RJL6020DPK-00#T0

RJL6020DPK-00#T0

MOSFET N-CH 600V 30A TO3P

Renesas Electronics America Inc
2,257 -

RFQ

RJL6020DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 210mOhm @ 15A, 10V - 130 nC @ 10 V ±30V 4750 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
UPA2735GR-E1-AT

UPA2735GR-E1-AT

MOSFET P-CH 30V 16A 8SOP

Renesas Electronics America Inc
2,376 -

RFQ

UPA2735GR-E1-AT

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 5mOhm @ 16A, 10V - 195 nC @ 10 V ±20V 6250 pF @ 10 V - 1.1W (Ta) 150°C (TJ) Surface Mount
UPA2736GR-E1-AT

UPA2736GR-E1-AT

MOSFET P-CH 30V 14A 8SOP

Renesas Electronics America Inc
3,108 -

RFQ

UPA2736GR-E1-AT

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7mOhm @ 14A, 10V - 80 nC @ 10 V ±20V 3400 pF @ 10 V - 1.1W (Ta) 150°C (TJ) Surface Mount
UPA2737GR-E1-AT

UPA2737GR-E1-AT

MOSFET P-CH 30V 11A 8SOP

Renesas Electronics America Inc
2,413 -

RFQ

UPA2737GR-E1-AT

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13mOhm @ 11A, 10V - 45 nC @ 10 V ±20V 1750 pF @ 10 V - 1.1W (Ta) 150°C (TJ) Surface Mount
UPA2738GR-E1-AT

UPA2738GR-E1-AT

MOSFET P-CH 30V 10A 8SOP

Renesas Electronics America Inc
2,742 -

RFQ

UPA2738GR-E1-AT

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V - 37 nC @ 10 V ±20V 1450 pF @ 10 V - 1.1W (Ta) 150°C (TJ) Surface Mount
UPA2812T1L-E2-AT

UPA2812T1L-E2-AT

MOSFET P-CH 30V 30A 8HWSON

Renesas Electronics America Inc
2,469 -

RFQ

UPA2812T1L-E2-AT

Ficha técnica

Tape & Reel (TR) - Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V - 100 nC @ 10 V ±20V 3740 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
UPA2813T1L-E2-AT

UPA2813T1L-E2-AT

MOSFET P-CH 30V 27A 8HWSON

Renesas Electronics America Inc
2,119 -

RFQ

UPA2813T1L-E2-AT

Ficha técnica

Tape & Reel (TR) - Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6.2mOhm @ 27A, 10V - 80 nC @ 10 V ±20V 3130 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
UPA2821T1L-E1-AT

UPA2821T1L-E1-AT

MOSFET N-CH 30V 26A 8HWSON

Renesas Electronics America Inc
3,190 -

RFQ

UPA2821T1L-E1-AT

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 26A (Tc) 4.5V, 10V 3.8mOhm @ 26A, 10V - 51 nC @ 10 V ±20V 2490 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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