Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK5014DPP-E0#T2

RJK5014DPP-E0#T2

MOSFET N-CH 500V 19A TO220FP

Renesas Electronics America Inc
3,865 -

RFQ

RJK5014DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Ta) 10V 390mOhm @ 9.5A, 10V - 46 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
RJK5015DPM-00#T1

RJK5015DPM-00#T1

MOSFET N-CH 500V 25A TO3PFM

Renesas Electronics America Inc
3,425 -

RFQ

RJK5015DPM-00#T1

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 25A (Ta) 10V 240mOhm @ 12.5A, 10V - 66 nC @ 10 V ±30V 2600 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
RJK5018DPK-00#T0

RJK5018DPK-00#T0

MOSFET N-CH 500V 35A TO3P

Renesas Electronics America Inc
3,529 -

RFQ

RJK5018DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Ta) 10V 155mOhm @ 17.5A, 10V - 104 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
RJK5020DPK-00#T0

RJK5020DPK-00#T0

MOSFET N-CH 500V 40A TO3P

Renesas Electronics America Inc
3,371 -

RFQ

RJK5020DPK-00#T0

Ficha técnica

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 40A (Ta) 10V 118mOhm @ 20A, 10V - 126 nC @ 10 V ±30V 5150 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
RJK5026DPP-E0#T2

RJK5026DPP-E0#T2

MOSFET N-CH 500V 6A TO220FP

Renesas Electronics America Inc
2,268 -

RFQ

RJK5026DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V - 14 nC @ 10 V ±30V 440 pF @ 25 V - 28.5W (Tc) 150°C (TJ) Through Hole
RJK5026DPP-M0#T2

RJK5026DPP-M0#T2

MOSFET N-CH 500V 6A TO220FL

Renesas Electronics America Inc
3,227 -

RFQ

RJK5026DPP-M0#T2

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Ta) 10V 1.7Ohm @ 3A, 10V - 14 nC @ 10 V ±30V 440 pF @ 25 V - 28.5W (Tc) 150°C (TJ) Through Hole
RJK5030DPD-00#J2

RJK5030DPD-00#J2

MOSFET N-CH 500V 5A MP3A

Renesas Electronics America Inc
3,330 -

RFQ

RJK5030DPD-00#J2

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.6Ohm @ 2A, 10V - - ±30V 550 pF @ 25 V - 41.7W (Tc) 150°C (TJ) Surface Mount
RJK5031DPD-00#J2

RJK5031DPD-00#J2

MOSFET N-CH 500V 3A MP3A

Renesas Electronics America Inc
2,968 -

RFQ

RJK5031DPD-00#J2

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V - - ±30V 280 pF @ 25 V - 40.3W (Tc) 150°C (TJ) Surface Mount
RJK5034DPP-E0#T2

RJK5034DPP-E0#T2

MOSFET N-CH 500V 1.2A TO220

Renesas Electronics America Inc
2,852 -

RFQ

Tube - Discontinued at Mosen - - - - - - - - - - - - - Through Hole
RJK6002DPD-00#J2

RJK6002DPD-00#J2

MOSFET N-CH 600V 2A MP3A

Renesas Electronics America Inc
3,357 -

RFQ

RJK6002DPD-00#J2

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 6.8Ohm @ 1A, 10V - 6.2 nC @ 10 V ±30V 165 pF @ 25 V - 30W (Tc) 150°C (TJ) Surface Mount
RJK6006DPD-00#J2

RJK6006DPD-00#J2

MOSFET N-CH 600V 5A MP3A

Renesas Electronics America Inc
2,228 -

RFQ

RJK6006DPD-00#J2

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Ta) 10V 1.6Ohm @ 2.5A, 10V - 19 nC @ 10 V ±30V 600 pF @ 25 V - 77.6W (Tc) 150°C (TJ) Surface Mount
RJK6011DJE-00#Z0

RJK6011DJE-00#Z0

MOSFET N-CH 600V 100MA TO92MOD

Renesas Electronics America Inc
3,069 -

RFQ

RJK6011DJE-00#Z0

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 100mA (Ta) 10V 52Ohm @ 50mA, 10V - 3.7 nC @ 10 V ±30V 25 pF @ 25 V - 900mW (Ta) 150°C (TJ) Through Hole
RJK6012DPE-00#J3

RJK6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics America Inc
2,659 -

RFQ

RJK6012DPE-00#J3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 920mOhm @ 5A, 10V - 30 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJK6012DPP-E0#T2

RJK6012DPP-E0#T2

MOSFET N-CH 600V 10A TO220FP

Renesas Electronics America Inc
2,089 -

RFQ

RJK6012DPP-E0#T2

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 920mOhm @ 5A, 10V - 30 nC @ 10 V ±30V 1100 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
RJK6013DPE-00#J3

RJK6013DPE-00#J3

MOSFET N-CH 600V 11A 4LDPAK

Renesas Electronics America Inc
2,470 -

RFQ

RJK6013DPE-00#J3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 700mOhm @ 5.5A, 10V - 37.5 nC @ 10 V ±30V 1450 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJK6013DPP-E0#T2

RJK6013DPP-E0#T2

MOSFET N-CH 600V 11A TO220FP

Renesas Electronics America Inc
2,082 -

RFQ

RJK6013DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 700mOhm @ 5.5A, 10V - 37.5 nC @ 10 V ±30V 1450 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
RJK6014DPP-E0#T2

RJK6014DPP-E0#T2

MOSFET N-CH 600V 16A TO220FP

Renesas Electronics America Inc
3,000 -

RFQ

RJK6014DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Ta) 10V 575mOhm @ 8A, 10V - 45 nC @ 10 V ±30V 1800 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
RJK6015DPK-00#T0

RJK6015DPK-00#T0

MOSFET N-CH 600V 21A TO3P

Renesas Electronics America Inc
2,755 -

RFQ

RJK6015DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Ta) 10V 360mOhm @ 10.5A, 10V - 67 nC @ 10 V ±30V 2600 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
RJK6015DPM-00#T1

RJK6015DPM-00#T1

MOSFET N-CH 600V 21A TO3PFM

Renesas Electronics America Inc
2,775 -

RFQ

RJK6015DPM-00#T1

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Ta) 10V 360mOhm @ 10.5A, 10V - 67 nC @ 10 V ±30V 2600 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
RJK6018DPK-00#T0

RJK6018DPK-00#T0

MOSFET N-CH 600V 30A TO3P

Renesas Electronics America Inc
3,609 -

RFQ

RJK6018DPK-00#T0

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Ta) 10V 235mOhm @ 15A, 10V - 92 nC @ 10 V ±30V 4100 pF @ 25 V - 200W (Tc) 150°C (TJ) Through Hole
Total 1496 Record«Prev1... 3031323334353637...75Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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