Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3207ZPBF

IRFB3207ZPBF

IRFB3207 - 12V-300V N-CHANNEL PO

International Rectifier
2,246 -

RFQ

IRFB3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410ZGPBF

IRFB4410ZGPBF

IRFB4410 - 12V-300V N-CHANNEL PO

International Rectifier
3,919 -

RFQ

IRFB4410ZGPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4115-7PPBF

IRFS4115-7PPBF

MOSFET N-CH 150V 105A D2PAK

International Rectifier
2,533 -

RFQ

IRFS4115-7PPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB31N20DPBF

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

International Rectifier
3,972 -

RFQ

IRFB31N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4321PBF

IRFB4321PBF

IRFB4321 - 12V-300V N-CHANNEL PO

International Rectifier
3,315 -

RFQ

IRFB4321PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH3707TRPBF

IRFH3707TRPBF

IRFH3707 - 12V-300V N-CHANNEL PO

International Rectifier
2,802 -

RFQ

IRFH3707TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 29A (Tc) 4.5V, 10V 12.4mOhm @ 12A, 10V 2.35V @ 25µA 8.1 nC @ 4.5 V ±20V 755 pF @ 15 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711ZTRPBF

IRFR3711ZTRPBF

IRFR3711 - 12V-300V N-CHANNEL PO

International Rectifier
3,940 -

RFQ

IRFR3711ZTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF141

IRF141

28A, 80V, 0.077OHM, N-CHANNEL PO

International Rectifier
3,003 -

RFQ

IRF141

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF142

IRF142

25A, 100V, 0.1OHM, N-CHANNEL POW

International Rectifier
3,147 -

RFQ

IRF142

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRL60HS118

IRL60HS118

IRL60HS118 - 12V-300V N-CHANNEL

International Rectifier
3,241 -

RFQ

IRL60HS118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 18.5A (Tc) 4.5V, 10V 17mOhm @ 11A, 10V 2.3V @ 10µA 8 nC @ 4.5 V ±20V 660 pF @ 25 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4321PBF

IRFP4321PBF

IRFP4321 - 12V-300V N-CHANNEL PO

International Rectifier
2,108 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 78A (Tc) 10V 15.5mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4227PBF

IRFP4227PBF

IRFP4227 - 12V-300V N-CHANNEL PO

International Rectifier
2,875 -

RFQ

IRFP4227PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 25mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF7420PBF

IRF7420PBF

MOSFET P-CH 12V 11.5A 8SO

International Rectifier
3,399 -

RFQ

IRF7420PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7468PBF

IRF7468PBF

MOSFET N-CH 40V 9.4A 8SO

International Rectifier
2,106 -

RFQ

IRF7468PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta) 4.5V, 10V 15.5mOhm @ 9.4A, 10V 2V @ 250µA 34 nC @ 4.5 V ±12V 2460 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP7530PBF

IRFP7530PBF

IRFP7530 - 12V-300V N-CHANNEL PO

International Rectifier
3,197 -

RFQ

IRFP7530PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.7V @ 250µA 411 nC @ 10 V ±20V 13703 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR4615PBF

IRFR4615PBF

MOSFET N-CH 150V 33A DPAK

International Rectifier
3,667 -

RFQ

IRFR4615PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7730PBF

IRFS7730PBF

MOSFET N-CH 75V 195A D2PAK

International Rectifier
2,745 -

RFQ

IRFS7730PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.7V @ 250µA 407 nC @ 10 V ±20V 13660 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3410PBF

IRFU3410PBF

MOSFET N-CH 100V 31A IPAK

International Rectifier
2,723 -

RFQ

IRFU3410PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 39mOhm @ 18A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 1690 pF @ 25 V - 3W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR7833TRPBF

IRLR7833TRPBF

IRLR7833 - 12V-300V N-CHANNEL PO

International Rectifier
3,840 -

RFQ

IRLR7833TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLS4030PBF

IRLS4030PBF

MOSFET N-CH 100V 180A D2PAK

International Rectifier
2,170 -

RFQ

IRLS4030PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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