Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR540ZTRL

AUIRFR540ZTRL

MOSFET N-CH 100V 35A DPAK

International Rectifier
2,381 -

RFQ

AUIRFR540ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105PBF

IRFR4105PBF

MOSFET N-CH 55V 27A DPAK

International Rectifier
2,629 -

RFQ

IRFR4105PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1324S-7PPBF

IRF1324S-7PPBF

MOSFET N-CH 24V 240A D2PAK

International Rectifier
3,139 -

RFQ

IRF1324S-7PPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 24 V 240A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 252 nC @ 10 V ±20V 7700 pF @ 19 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4010TRL7PP

IRFS4010TRL7PP

IRFS4010 - 12V-300V N-CHANNEL PO

International Rectifier
3,809 -

RFQ

IRFS4010TRL7PP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315PBF

IRF3315PBF

MOSFET N-CH 150V 23A TO220AB

International Rectifier
2,027 -

RFQ

IRF3315PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) - 70mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL024ZPBF

IRLL024ZPBF

MOSFET N-CH 55V 5A SOT223

International Rectifier
3,001 -

RFQ

IRLL024ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 5A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V 3V @ 250µA 11 nC @ 5 V ±16V 380 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLS3813PBF

IRLS3813PBF

MOSFET N-CH 30V 160A D2PAK

International Rectifier
3,614 -

RFQ

IRLS3813PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1405ZSTRL

AUIRF1405ZSTRL

MOSFET N-CH 55V 150A D2PAK

International Rectifier
2,212 -

RFQ

AUIRF1405ZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 150A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3713PBF

IRL3713PBF

MOSFET N-CH 30V 260A TO220AB

International Rectifier
2,510 -

RFQ

IRL3713PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 260A (Tc) 4.5V, 10V 3mOhm @ 38A, 10V 2.5V @ 250µA 110 nC @ 4.5 V ±20V 5890 pF @ 15 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7424TRPBF

IRF7424TRPBF

IRF7424 - 20V-250V P-CHANNEL POW

International Rectifier
2,667 -

RFQ

IRF7424TRPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS8407

AUIRFS8407

AUIRFS8407 - 20V-40V N-CHANNEL A

International Rectifier
3,875 -

RFQ

AUIRFS8407

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44ZS

AUIRFZ44ZS

MOSFET N-CH 55V 51A D2PAK

International Rectifier
3,465 -

RFQ

AUIRFZ44ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7738L2TR

AUIRF7738L2TR

MOSFET N-CH 40V 35A/130A DIRECT

International Rectifier
3,370 -

RFQ

AUIRF7738L2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 130A (Tc) 10V 1.6mOhm @ 109A, 10V 4V @ 250µA 194 nC @ 10 V ±20V 7471 pF @ 25 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR13N15DPBF

IRFR13N15DPBF

MOSFET N-CH 150V 14A DPAK

International Rectifier
2,758 -

RFQ

IRFR13N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 180mOhm @ 8.3A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 620 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR8314TRPBF

IRFR8314TRPBF

IRFR8314 - 12V-300V N-CHANNEL PO

International Rectifier
2,068 -

RFQ

IRFR8314TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 90A, 10V 2.2V @ 100µA 54 nC @ 4.5 V ±20V 4945 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3806PBF

IRFS3806PBF

MOSFET N-CH 60V 43A D2PAK

International Rectifier
2,065 -

RFQ

IRFS3806PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR8401

AUIRFR8401

MOSFET N-CH 40V 100A DPAK

International Rectifier
3,751 -

RFQ

AUIRFR8401

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3411TRPBF

IRFR3411TRPBF

IRFR3411 - 12V-300V N-CHANNEL PO

International Rectifier
2,142 -

RFQ

IRFR3411TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR7746TRPBF

IRFR7746TRPBF

IRFR7746 - 12V-300V N-CHANNEL PO

International Rectifier
2,276 -

RFQ

IRFR7746TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3206PBF

IRFSL3206PBF

MOSFET N-CH 60V 120A TO262

International Rectifier
2,800 -

RFQ

IRFSL3206PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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