| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                     
                    
                     
                     
                    
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                    FQPF13N06LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |  
                2,468 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 5V, 10V | 110mOhm @ 5A, 10V | 2.5V @ 250µA | 6.4 nC @ 5 V | ±20V | 350 pF @ 25 V | - | 24W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQPF7N65CPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |  
                3,622 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FDMC86520LPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |  
                3,066 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 7.9mOhm @ 13.5A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 4550 pF @ 30 V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDBL0210N80POWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |  
                2,007 | - | 
                    
                    RFQ | 
                   
                   Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10 pF @ 40 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | |
                     
                    
                     
                     
                    
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                    FQD4P40TMPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |  
                2,167 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 2.7A (Tc) | 10V | 3.1Ohm @ 1.35A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 680 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDD4141POWER FIELD-EFFECT TRANSISTOR, 5 Fairchild Semiconductor |  
                3,107 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 10.8A (Ta), 50A (Tc) | 4.5V, 10V | 12.3mOhm @ 12.7A, 10V | 3V @ 250µA | 50 nC @ 10 V | ±20V | 2775 pF @ 20 V | - | 2.4W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDD5690POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |  
                3,536 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 6V, 10V | 27mOhm @ 9A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1110 pF @ 25 V | - | 3.2W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDPF16N50POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |  
                3,228 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FCH125N60EMOSFET N-CH 600V 29A TO247-3 Fairchild Semiconductor |  
                3,350 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95 nC @ 10 V | ±20V | 2990 pF @ 380 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FCPF850N80ZPOWER FIELD-EFFECT TRANSISTOR, N Fairchild Semiconductor |  
                2,205 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    BSS138KSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                3,673 | - | 
                    
                    RFQ | 
                   
                   Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 220mA (Ta) | 1.8V, 2.5V | 1.6Ohm @ 50mA, 5V | 1.2V @ 250µA | 2.4 nC @ 10 V | ±12V | 58 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
                     
                    
                     
                     
                    
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                    FDBL0090N40MOSFET N-CH 40V 240A 8HPSOF Fairchild Semiconductor |  
                2,852 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.9mOhm @ 80A, 10V | 4V @ 250µA | 188 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDN304PSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                2,997 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 1.8V, 4.5V | 52mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 20 nC @ 4.5 V | ±8V | 1312 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDS6670ASSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                2,167 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 38 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDS6690ASSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                2,964 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 3V @ 1mA | 23 nC @ 10 V | ±20V | 910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FQT7N10LTFPOWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |  
                3,943 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tc) | 5V, 10V | 350mOhm @ 850mA, 10V | 2V @ 250µA | 6 nC @ 5 V | ±20V | 290 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDC658APSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                2,820 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 8.1 nC @ 5 V | ±25V | 470 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDS9400AMOSFET P-CH 30V 3.4A 8SOIC Fairchild Semiconductor |  
                2,273 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.4A (Ta) | 4.5V, 10V | 130mOhm @ 1A, 10V | 3V @ 250µA | 3.5 nC @ 5 V | ±25V | 205 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 
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                    FDB0250N807LMOSFET N-CH 80V 240A TO263-7 Fairchild Semiconductor |  
                3,777 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 8V, 10V | 2.2mOhm @ 30A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 15400 pF @ 40 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FDN360PSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |  
                2,781 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 80mOhm @ 2A, 10V | 3V @ 250µA | 9 nC @ 10 V | ±20V | 298 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |