Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF13N50

FQPF13N50

MOSFET N-CH 500V 12.5A TO220F

onsemi
3,424 -

RFQ

FQPF13N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA8N90C

FQA8N90C

MOSFET N-CH 900V 8A TO3P

onsemi
3,712 -

RFQ

FQA8N90C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.9Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF47P06

FQAF47P06

MOSFET P-CH 60V 38A TO3PF

onsemi
2,286 -

RFQ

FQAF47P06

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 38A (Tc) 10V 26mOhm @ 19A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA34N20

FQA34N20

MOSFET N-CH 200V 34A TO3P

onsemi
2,295 -

RFQ

FQA34N20

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 34A (Tc) 10V 75mOhm @ 17A, 10V 5V @ 250µA 78 nC @ 10 V ±30V 3100 pF @ 25 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF13N50T

FQPF13N50T

MOSFET N-CH 500V 12.5A TO220F

onsemi
2,616 -

RFQ

FQPF13N50T

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75343S3

HUF75343S3

MOSFET N-CH 55V 75A I2PAK

onsemi
2,197 -

RFQ

HUF75343S3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75343S3S

HUF75343S3S

MOSFET N-CH 55V 75A D2PAK

onsemi
3,136 -

RFQ

HUF75343S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDME820NZT

FDME820NZT

MOSFET N-CH 20V 9A MICROFET

onsemi
2,118 -

RFQ

FDME820NZT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±12V 865 pF @ 10 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDP7061

NDP7061

MOSFET N-CH 60V 64A TO220-3

onsemi
3,087 -

RFQ

NDP7061

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 10V 16mOhm @ 35A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 1930 pF @ 25 V - 130W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQB70N08TM

FQB70N08TM

MOSFET N-CH 80V 70A D2PAK

onsemi
2,029 -

RFQ

FQB70N08TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMS4177PR2G

NTMS4177PR2G

MOSFET P-CH 30V 6.6A 8SOIC

onsemi
3,628 -

RFQ

NTMS4177PR2G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 6.6A (Ta) 4.5V, 10V 12mOhm @ 11.4A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 24 V - 840mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDT86246L

FDT86246L

MOSFET N-CH 150V 2A SOT223-4

onsemi
3,170 -

RFQ

FDT86246L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Ta) 4.5V, 10V 228mOhm @ 2A, 10V 2.5V @ 250µA 6.3 nC @ 10 V ±20V 335 pF @ 75 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6375

FDS6375

MOSFET P-CH 20V 8A 8SOIC

onsemi
2,819 -

RFQ

FDS6375

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 36 nC @ 4.5 V ±8V 2694 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
HUF75321D3ST

HUF75321D3ST

MOSFET N-CH 55V 20A TO252AA

onsemi
3,949 -

RFQ

HUF75321D3ST

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTFS5116PLTAG

NVTFS5116PLTAG

MOSFET P-CH 60V 6A 8WDFN

onsemi
2,586 -

RFQ

NVTFS5116PLTAG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4.5V, 10V 52mOhm @ 7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1258 pF @ 25 V - 3.2W (Ta), 21W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQAF7N80

FQAF7N80

MOSFET N-CH 800V 5A TO3PF

onsemi
2,883 -

RFQ

FQAF7N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI12N60CTU

FQI12N60CTU

MOSFET N-CH 600V 12A I2PAK

onsemi
2,329 -

RFQ

FQI12N60CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 3.13W (Ta), 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA7N80

FQA7N80

MOSFET N-CH 800V 7.2A TO3P

onsemi
2,997 -

RFQ

FQA7N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7.2A (Tc) 10V 1.5Ohm @ 3.6A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB12N60TM_AM002

FQB12N60TM_AM002

MOSFET N-CH 600V 10.5A D2PAK

onsemi
3,996 -

RFQ

FQB12N60TM_AM002

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI12N60TU

FQI12N60TU

MOSFET N-CH 600V 10.5A I2PAK

onsemi
2,988 -

RFQ

FQI12N60TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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