Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQA6N80

FQA6N80

MOSFET N-CH 800V 6.3A TO3P

onsemi
2,974 -

RFQ

FQA6N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.3A (Tc) 10V 1.95Ohm @ 3.15A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 185W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF6N80

FQAF6N80

MOSFET N-CH 800V 4.4A TO3PF

onsemi
2,264 -

RFQ

FQAF6N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.95Ohm @ 2.2A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA6N70

FQA6N70

MOSFET N-CH 700V 6.4A TO3P

onsemi
2,397 -

RFQ

FQA6N70

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 6.4A (Tc) 10V 1.5Ohm @ 3.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 152W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFH9250L

SFH9250L

MOSFET P-CH 200V 19.5A TO3P

onsemi
3,195 -

RFQ

SFH9250L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 19.5A (Tc) 5V 230mOhm @ 9.8A, 5V 2V @ 250µA 120 nC @ 5 V ±20V 3250 pF @ 25 V - 204W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75639S3S

HUFA75639S3S

MOSFET N-CH 100V 56A D2PAK

onsemi
2,782 -

RFQ

Tube Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA55N10

FQA55N10

MOSFET N-CH 100V 61A TO3P

onsemi
2,325 -

RFQ

FQA55N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 61A (Tc) 10V 26mOhm @ 30.5A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2730 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75339S3S

HUFA75339S3S

MOSFET N-CH 55V 75A D2PAK

onsemi
3,277 -

RFQ

HUFA75339S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA76439S3S

HUFA76439S3S

MOSFET N-CH 60V 75A D2PAK

onsemi
3,413 -

RFQ

HUFA76439S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB6N90TM_AM002

FQB6N90TM_AM002

MOSFET N-CH 900V 5.8A D2PAK

onsemi
3,232 -

RFQ

FQB6N90TM_AM002

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Tc) 10V 1.9Ohm @ 2.9A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1880 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6612A

FDS6612A

MOSFET N-CH 30V 8.4A 8SOIC

onsemi
2,322 -

RFQ

FDS6612A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta) 4.5V, 10V 22mOhm @ 8.4A, 10V 3V @ 250µA 7.6 nC @ 5 V ±20V 560 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS9431A

FDS9431A

MOSFET P-CH 20V 3.5A 8SOIC

onsemi
2,369 -

RFQ

FDS9431A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 130mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 405 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA430NZ

FDMA430NZ

MOSFET N-CH 30V 5A 6MICROFET

onsemi
3,397 -

RFQ

FDMA430NZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 2.5V, 4.5V 40mOhm @ 5A, 4.5V 1.5V @ 250µA 11 nC @ 4.5 V ±12V 800 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD5P10TM

FQD5P10TM

MOSFET P-CH 100V 3.6A DPAK

onsemi
3,165 -

RFQ

FQD5P10TM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 3.6A (Tc) 10V 1.05Ohm @ 1.8A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD2955T4G

NTD2955T4G

MOSFET P-CH 60V 12A DPAK

onsemi
2,512 -

RFQ

NTD2955T4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 180mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 750 pF @ 25 V - 55W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FQD12N20LTM

FQD12N20LTM

MOSFET N-CH 200V 9A DPAK

onsemi
3,515 -

RFQ

FQD12N20LTM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 5V, 10V 280mOhm @ 4.5A, 10V 2V @ 250µA 21 nC @ 5 V ±20V 1080 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC86244

FDC86244

MOSFET N-CH 150V 2.3A SUPERSOT6

onsemi
2,550 -

RFQ

FDC86244

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 2.3A (Ta) 6V, 10V 144mOhm @ 2.3A, 10V 4V @ 250µA 6 nC @ 10 V ±20V 345 pF @ 75 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC638APZ

FDC638APZ

MOSFET P-CH 20V 4.5A SUPERSOT6

onsemi
2,500 -

RFQ

FDC638APZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 43mOhm @ 4.5A, 4.5V 1.5V @ 250µA 12 nC @ 4.5 V ±12V 1000 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQB70N10TM_AM002

FQB70N10TM_AM002

MOSFET N-CH 100V 57A D2PAK

onsemi
3,924 -

RFQ

FQB70N10TM_AM002

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3300 pF @ 25 V - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP13N50

FQP13N50

MOSFET N-CH 500V 12.5A TO220-3

onsemi
3,920 -

RFQ

FQP13N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA10N60C

FQA10N60C

MOSFET N-CH 600V 10A TO3P

onsemi
3,831 -

RFQ

FQA10N60C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 730mOhm @ 5A, 10V 4V @ 250µA 57 nC @ 10 V ±30V 2040 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 7100 Record«Prev1... 8687888990919293...355Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario