Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB16N25TM

FQB16N25TM

MOSFET N-CH 250V 16A D2PAK

onsemi
3,236 -

RFQ

FQB16N25TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 16A (Tc) 10V 230mOhm @ 8A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1200 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQAF9P25

FQAF9P25

MOSFET P-CH 250V 7.1A TO3PF

onsemi
3,832 -

RFQ

FQAF9P25

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 7.1A (Tc) 10V 620mOhm @ 3.55A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC653N

FDC653N

MOSFET N-CH 30V 5A SUPERSOT6

onsemi
3,889 -

RFQ

FDC653N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 35mOhm @ 5A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 350 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP6N60

FQP6N60

MOSFET N-CH 600V 6.2A TO220-3

onsemi
3,450 -

RFQ

FQP6N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1000 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF22P10

FQAF22P10

MOSFET P-CH 100V 16.6A TO3PF

onsemi
3,757 -

RFQ

FQAF22P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 16.6A (Tc) 10V 125mOhm @ 8.3A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1500 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF33N10L

FQAF33N10L

MOSFET N-CH 100V 25.8A TO3PF

onsemi
2,435 -

RFQ

FQAF33N10L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25.8A (Tc) 5V, 10V 52mOhm @ 12.9A, 10V 2V @ 250µA 40 nC @ 5 V ±20V 1630 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF33N10

FQAF33N10

MOSFET N-CH 100V 25.8A TO3PF

onsemi
2,904 -

RFQ

FQAF33N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25.8A (Tc) 10V 52mOhm @ 12.9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
NDP6030PL

NDP6030PL

MOSFET P-CH 30V 30A TO220-3

onsemi
3,212 -

RFQ

NDP6030PL

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 25mOhm @ 19A, 10V 2V @ 250µA 36 nC @ 5 V ±16V 1570 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Through Hole
MGSF2N02ELT1G

MGSF2N02ELT1G

MOSFET N-CH 20V 2.8A SOT23-3

onsemi
2,990 -

RFQ

MGSF2N02ELT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 85mOhm @ 3.6A, 4.5V 1V @ 250µA 3.5 nC @ 4 V ±8V 150 pF @ 5 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS8880

FDS8880

MOSFET N-CH 30V 11.6A 8SOIC

onsemi
24,850 -

RFQ

FDS8880

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 11.6A (Ta) 4.5V, 10V 10mOhm @ 11.6A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1235 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQD1N60CTM

FQD1N60CTM

MOSFET N-CH 600V 1A DPAK

onsemi
80,900 -

RFQ

FQD1N60CTM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 4V @ 250µA 6.2 nC @ 10 V ±30V 170 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP4N90

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

onsemi
3,351 -

RFQ

FQP4N90

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA22P10

FQA22P10

MOSFET P-CH 100V 24A TO3PN

onsemi
3,117 -

RFQ

FQA22P10

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 1500 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDW256P

FDW256P

MOSFET P-CH 30V 8A 8TSSOP

onsemi
3,532 -

RFQ

FDW256P

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 13.5mOhm @ 8A, 10V 3V @ 250µA 38 nC @ 5 V ±25V 2267 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQAF19N20L

FQAF19N20L

MOSFET N-CH 200V 16A TO3PF

onsemi
2,311 -

RFQ

FQAF19N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 5V, 10V 140mOhm @ 8A, 10V 2V @ 250µA 35 nC @ 5 V ±20V 2200 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF12P20

FQAF12P20

MOSFET P-CH 200V 8.6A TO3PF

onsemi
2,960 -

RFQ

FQAF12P20

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 8.6A (Tc) 10V 470mOhm @ 4.3A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1200 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA33N10

FQA33N10

MOSFET N-CH 100V 36A TO3P

onsemi
3,866 -

RFQ

FQA33N10

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 52mOhm @ 18A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75332S3ST

HUF75332S3ST

MOSFET N-CH 55V 60A D2PAK

onsemi
2,449 -

RFQ

HUF75332S3ST

Ficha técnica

Tape & Reel (TR) UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB14N30TM

FQB14N30TM

MOSFET N-CH 300V 14.4A D2PAK

onsemi
2,648 -

RFQ

FQB14N30TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 14.4A (Tc) 10V 290mOhm @ 7.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI32N12V2TU

FQI32N12V2TU

MOSFET N-CH 120V 32A I2PAK

onsemi
3,891 -

RFQ

FQI32N12V2TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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