Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF32N12V2

FQPF32N12V2

MOSFET N-CH 120V 32A TO220F

onsemi
3,746 -

RFQ

FQPF32N12V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI3N90TU

FQI3N90TU

MOSFET N-CH 900V 3.6A I2PAK

onsemi
2,142 -

RFQ

FQI3N90TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 4.25Ohm @ 1.8A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 910 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N90TM

FQB3N90TM

MOSFET N-CH 900V 3.6A D2PAK

onsemi
3,474 -

RFQ

FQB3N90TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 4.25Ohm @ 1.8A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 910 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP14N30

FQP14N30

MOSFET N-CH 300V 14.4A TO220-3

onsemi
2,945 -

RFQ

FQP14N30

Ficha técnica

Bulk,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 14.4A (Tc) 10V 290mOhm @ 7.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF4N80

FQPF4N80

MOSFET N-CH 800V 2.2A TO220F

onsemi
2,301 -

RFQ

FQPF4N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB55N06TM

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

onsemi
2,669 -

RFQ

FQB55N06TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 20mOhm @ 27.5A, 10V 4V @ 250µA 46 nC @ 10 V ±25V 1690 pF @ 25 V - 3.75W (Ta), 133W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

onsemi
2,444 -

RFQ

FQP32N12V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI32N20CTU

FQI32N20CTU

MOSFET N-CH 200V 28A I2PAK

onsemi
2,211 -

RFQ

FQI32N20CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 3.13W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB6N60TM

FQB6N60TM

MOSFET N-CH 600V 6.2A D2PAK

onsemi
3,722 -

RFQ

FQB6N60TM

Ficha técnica

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1000 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFP22N10

RFP22N10

MOSFET N-CH 100V 22A TO220-3

onsemi
3,980 -

RFQ

RFP22N10

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 80mOhm @ 22A, 10V 4V @ 250µA 150 nC @ 20 V ±20V - - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76429P3

HUFA76429P3

MOSFET N-CH 60V 47A TO220-3

onsemi
2,733 -

RFQ

HUFA76429P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 4.5V, 10V 22mOhm @ 47A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75329P3

HUFA75329P3

MOSFET N-CH 55V 49A TO220-3

onsemi
3,725 -

RFQ

HUFA75329P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75623S3ST

HUFA75623S3ST

MOSFET N-CH 100V 22A D2PAK

onsemi
2,426 -

RFQ

HUFA75623S3ST

Ficha técnica

Tape & Reel (TR) UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 64mOhm @ 22A, 10V 4V @ 250µA 52 nC @ 20 V ±20V 790 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF65N06

FQPF65N06

MOSFET N-CH 60V 40A TO220F

onsemi
2,956 -

RFQ

FQPF65N06

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 16mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 10 V ±25V 2410 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76423S3ST

HUFA76423S3ST

MOSFET N-CH 60V 35A D2PAK

onsemi
3,500 -

RFQ

HUFA76423S3ST

Ficha técnica

Tape & Reel (TR) UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75333P3

HUF75333P3

MOSFET N-CH 55V 66A TO220-3

onsemi
2,634 -

RFQ

HUF75333P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF14N30

FQPF14N30

MOSFET N-CH 300V 8.5A TO220F

onsemi
2,670 -

RFQ

FQPF14N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 8.5A (Tc) 10V 290mOhm @ 4.25A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVTFS6H888NTAG

NVTFS6H888NTAG

MOSFET N-CH 80V 4.7A/12A 8WDFN

onsemi
3,796 -

RFQ

NVTFS6H888NTAG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 4.7A (Ta), 12A (Tc) 10V 55mOhm @ 5A, 10V 4V @ 15µA 4.7 nC @ 10 V ±20V 220 pF @ 40 V - 2.9W (Ta), 18W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDN537N

FDN537N

MOSFET N-CH 30V 6.5A SUPERSOT3

onsemi
3,495 -

RFQ

FDN537N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 6.5A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 8.4 nC @ 10 V ±20V 465 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SFP9640L

SFP9640L

MOSFET P-CH 200V 11A TO220-3

onsemi
3,449 -

RFQ

SFP9640L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 5V 500mOhm @ 5.5A, 5V 2V @ 250µA 59 nC @ 5 V ±20V 1585 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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