Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDC6N50NZFTM

FDC6N50NZFTM

FDC6N50NZFTM

onsemi
2,406 -

RFQ

Bulk - Last Time Buy - - - - - - - - - - - - - -
FDBL9406-F085HM

FDBL9406-F085HM

MOSFET

onsemi
2,129 -

RFQ

Bulk PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.2mOhm @ 80A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 7735 pF @ 25 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDM6296-G

FDM6296-G

FDM6296 - TBD_25CH

onsemi
12,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NVH4L027N65S3F

NVH4L027N65S3F

SF3 FRFET AUTO 27MOHM TO-247-4L

onsemi
2,461 -

RFQ

NVH4L027N65S3F

Ficha técnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 227 nC @ 10 V ±30V 7780 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF600N60Z

FCPF600N60Z

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
58,200 -

RFQ

FCPF600N60Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDS8425

NDS8425

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
4,704 -

RFQ

NDS8425

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 2.7V, 4.5V 22mOhm @ 7.4A, 4.5V 1.5V @ 250µA 18 nC @ 4.5 V ±8V 1098 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6912

FDS6912

POWER FIELD-EFFECT TRANSISTOR, 6

onsemi
32,189 -

RFQ

FDS6912

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS3008SDC

FDMS3008SDC

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
6,000 -

RFQ

FDMS3008SDC

Ficha técnica

Bulk Dual Cool™, PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta) 4.5V, 10V 2.6mOhm @ 28A, 10V 3V @ 1mA 64 nC @ 10 V ±20V 4520 pF @ 15 V - 3.3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVH4L018N075SC1

NVH4L018N075SC1

SIC MOS TO247-4L 750V

onsemi
2,953 -

RFQ

NVH4L018N075SC1

Ficha técnica

Tray Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 750 V 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V 4.3V @ 22mA 262 nC @ 18 V +22V, -8V 5010 pF @ 375 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTC040N120SC1

NTC040N120SC1

SIC MOS WAFER SALES 40MOHM 1200V

onsemi
2,048 -

RFQ

NTC040N120SC1

Ficha técnica

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1781 pF @ 800 V - 348W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVH4L020N090SC1

NVH4L020N090SC1

SIC MOSFET 900V TO247-4L

onsemi
2,700 -

RFQ

NVH4L020N090SC1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 900 V 116A (Tc) 15V, 18V 16mOhm @ 60A, 18V 4.3V @ 20mA 196 nC @ 15 V +22V, -8V 4415 pF @ 450 V - 484W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6673BZ-G

FDS6673BZ-G

-30V P-CHANNEL POWERTRENCH MOSFE

onsemi
129,650 -

RFQ

Tape & Reel (TR) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 7.8mOhm @ 14.5A, 10V 3V @ 250µA 65 nC @ 5 V ±25V 4700 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTD5C446NT4G

NTD5C446NT4G

NTD5C446 - SINGLE N-CHANNEL POWE

onsemi
39,782 -

RFQ

NTD5C446NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 34.3 nC @ 10 V ±20V 2300 pF @ 20 V - 66W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA7N80C-F109

FQA7N80C-F109

POWER MOSFET, N-CHANNEL, QFET, 8

onsemi
26,300 -

RFQ

FQA7N80C-F109

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMF6704A

FDMF6704A

HALF BRIDGE BASED MOSFET DRIVER

onsemi
10,612 -

RFQ

FDMF6704A

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
FCP21N60N

FCP21N60N

FCP21N60 - N-CHANNEL, MOSFET

onsemi
6,400 -

RFQ

FCP21N60N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
NTC020N120SC1

NTC020N120SC1

SIC MOS WAFER SALES 20MOHM 1200V

onsemi
3,320 -

RFQ

NTC020N120SC1

Ficha técnica

Tray - Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 28mOhm @ 60A, 20V 4.3V @ 20mA 203 nC @ 20 V +25V, -15V 2890 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTP5860NG

NTP5860NG

SINGLE N-CHANNEL POWER MOSFET 60

onsemi
8,566 -

RFQ

NTP5860NG

Ficha técnica

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 10760 pF @ 25 V - 283W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK4065-DL-1EX

2SK4065-DL-1EX

2SK4065 - MOSFET N-CHANNEL 75V T

onsemi
3,140 -

RFQ

2SK4065-DL-1EX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Ta) - 6mOhm @ 50A, 10V - 220 nC @ 10 V - 12200 pF @ 20 V - 1.65W (Ta), 90W (Tc) 150°C (TJ) Surface Mount
FCA20N60-F109

FCA20N60-F109

DISCRETE MOSFET

onsemi
12,150 -

RFQ

FCA20N60-F109

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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