Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDG330P

FDG330P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
43,250 -

RFQ

FDG330P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ECH8659-M-TL-H

ECH8659-M-TL-H

POWER FIELD-EFFECT TRANSISTOR, N

onsemi
23,899 -

RFQ

ECH8659-M-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMA1028NZ

FDMA1028NZ

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
274,125 -

RFQ

FDMA1028NZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDT3612-SN00151

FDT3612-SN00151

MOSFET N-CH 100V SOT223

onsemi
3,906 -

RFQ

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.7A (Ta) 6V, 10V 120mOhm @ 3.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTMTS0D4N04CLTXG

NTMTS0D4N04CLTXG

MOSFET N-CH 40V 79.8A 8DFNW

onsemi
3,560 -

RFQ

NTMTS0D4N04CLTXG

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 553.8A (Tc) 4.5V, 10V 0.4mOhm @ 50A, 10V 2.5V @ 250µA 341 nC @ 10 V ±20V 20600 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH47N60-F085

FCH47N60-F085

MOSFET N-CH 600V 47A TO247-3

onsemi
3,012 -

RFQ

FCH47N60-F085

Ficha técnica

Tube,Tube Automotive, AEC-Q101, SuperFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 79mOhm @ 47A, 10V 5V @ 250µA 250 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL060N090SC1

NVHL060N090SC1

SICFET N-CH 900V 46A TO247-3

onsemi
3,178 -

RFQ

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTC080N120SC1

NTC080N120SC1

SIC MOS WAFER SALES 80MOHM 1200V

onsemi
2,166 -

RFQ

NTC080N120SC1

Ficha técnica

Tray - Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1112 pF @ 800 V - 178W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTHL019N60S5F

NTHL019N60S5F

SUPERFET5 FRFET, 19MOHM, TO-247-

onsemi
3,684 -

RFQ

NTHL019N60S5F

Ficha técnica

Tube SuperFET® V, FRFET® Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 19mOhm @ 37.5A,10V 4.8V @ 15.7mA 252 nC @ 10 V ±30V 13400 pF @ 400 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR15120A

NDCTR15120A

MOSFET N-CH 1200V 15A SMD

onsemi
2,677 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
NDCTR40120A

NDCTR40120A

MOSFET N-CH 1200V 40A SMD

onsemi
3,819 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
NVMYS1D7N04CT1G

NVMYS1D7N04CT1G

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi
2,145 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS1D6N04CLT1G

NVMYS1D6N04CLT1G

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi
2,075 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDCTR50120A

NDCTR50120A

MOSFET N-CH 1200V 50A SMD

onsemi
3,323 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
NDCTR20120A

NDCTR20120A

MOSFET N-CH 1200V 20A SMD

onsemi
2,369 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
2SJ632-TD-E

2SJ632-TD-E

2SJ632 - P-CHANNEL SILICON MOSFE

onsemi
12,073 -

RFQ

2SJ632-TD-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMA8878-F130

FDMA8878-F130

30V SINGLE N-CHANNEL POWER TRENC

onsemi
1,337,705 -

RFQ

Tape & Reel (TR) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 10A (Tc) 4.5V, 10V 16mOhm @ 9A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 720 pF @ 15 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD8880-SN00319

FDD8880-SN00319

FDD8880 - 35A, 30V, N-CHANNEL PO

onsemi
89,025 -

RFQ

FDD8880-SN00319

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDS6676AS-G

FDS6676AS-G

30V N-CHANNEL POWERTRENCH SYNCFE

onsemi
22,500 -

RFQ

Tape & Reel (TR) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2510 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQU12N20TU-T

FQU12N20TU-T

IC

onsemi
2,926 -

RFQ

Bulk - Last Time Buy - - - - - - - - - - - - - -
Total 7100 Record«Prev1... 334335336337338339340341...355Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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