Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7607-55B,118

BUK7607-55B,118

NOW NEXPERIA BUK7607-55B - 119A

NXP USA Inc.
2,951 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.1mOhm @ 25A, 10V 4V @ 1mA 53 nC @ 10 V ±20V 3760 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
BUK7613-75B,118

BUK7613-75B,118

MOSFET N-CH 75V 75A D2PAK

NXP USA Inc.
2,306 -

RFQ

BUK7613-75B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 13mOhm @ 25A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 2644 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R4-60E,118

BUK762R4-60E,118

MOSFET N-CH 60V 120A D2PAK

NXP USA Inc.
3,426 -

RFQ

BUK762R4-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB15XN,115

PMPB15XN,115

NOW NEXPERIA PMPB15XN - 7.3A, 20

NXP USA Inc.
2,841 -

RFQ

PMPB15XN,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 7.3A (Ta) 1.8V, 4.5V 21mOhm @ 7.3A, 4.5V 900mV @ 250µA 20.2 nC @ 4.5 V ±12V 1240 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN4R4-30MLC,115

PSMN4R4-30MLC,115

NOW NEXPERIA PSMN4R4-30MLC - 70A

NXP USA Inc.
2,904 -

RFQ

PSMN4R4-30MLC,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.65mOhm @ 25A, 10V 2.15V @ 1mA 23 nC @ 10 V ±20V 1515 pF @ 15 V - 69W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R2-40BS,118

PSMN2R2-40BS,118

MOSFET N-CH 40V 100A D2PAK

NXP USA Inc.
3,597 -

RFQ

PSMN2R2-40BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8423 pF @ 20 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK765R3-40E,118

BUK765R3-40E,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
2,202 -

RFQ

BUK765R3-40E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 1mA 35.5 nC @ 10 V ±20V 2772 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R6-60PSQ127

PSMN2R6-60PSQ127

MOSFET N-CH 60V 150A TO220AB

NXP USA Inc.
3,960 -

RFQ

PSMN2R6-60PSQ127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Ta) - 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 7629 pF @ 25 V - 326W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK9C10-55BIT/A,11

BUK9C10-55BIT/A,11

MOSFET N-CH 55V 75A D2PAK-7

NXP USA Inc.
2,425 -

RFQ

BUK9C10-55BIT/A,11

Ficha técnica

Bulk TrenchPLUS Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) 4.5V, 10V 9mOhm @ 10A, 10V 2V @ 1mA 51 nC @ 5 V ±15V 4667 pF @ 25 V - 194W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y6R0-60E,115

BUK9Y6R0-60E,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,728 -

RFQ

BUK9Y6R0-60E,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V 5.2mOhm @ 25A, 10V 2.1V @ 1mA 39.4 nC @ 5 V ±10V 6319 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMV50EPEAR

PMV50EPEAR

PMV50EPEA - 30 V, P-CHANNEL TREN

NXP USA Inc.
2,766 -

RFQ

PMV50EPEAR

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 45mOhm @ 4.2A, 10V 3V @ 250µA 19.2 nC @ 10 V ±20V 793 pF @ 15 V - 310mW (Ta), 455mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN5R3-25MLDX

PSMN5R3-25MLDX

PSMN5R3-25MLD - N-CHANNEL 25V, L

NXP USA Inc.
3,656 -

RFQ

PSMN5R3-25MLDX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 70A (Tc) 4.5V, 10V 5.9mOhm @ 15A, 10V 2.2V @ 1mA 12.7 nC @ 10 V ±20V 858 pF @ 12 V Schottky Diode (Body) 51W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK954R8-60E,127

BUK954R8-60E,127

MOSFET N-CH 60V 100A TO220AB

NXP USA Inc.
3,210 -

RFQ

BUK954R8-60E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 65 nC @ 5 V ±10V 9710 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7Y113-100EX

BUK7Y113-100EX

MOSFET N-CH 100V 12A LFPAK56

NXP USA Inc.
2,443 -

RFQ

BUK7Y113-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 113mOhm @ 5A, 10V 4V @ 1mA 10.4 nC @ 10 V ±20V 601 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK962R8-60E,118

BUK962R8-60E,118

NOW NEXPERIA BUK962R8-60E - 120A

NXP USA Inc.
3,804 -

RFQ

BUK962R8-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 5V 2.5mOhm @ 25A, 10V 2.1V @ 1mA 92 nC @ 5 V ±10V 15600 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y153-100E,115

BUK9Y153-100E,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,421 -

RFQ

BUK9Y153-100E,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 5V 146mOhm @ 2A, 10V 2.1V @ 1mA 6.8 nC @ 5 V ±10V 716 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y14-40B,115

BUK9Y14-40B,115

TRANSISTOR >30MHZ

NXP USA Inc.
2,099 -

RFQ

BUK9Y14-40B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 5V 11mOhm @ 20A, 10V 2V @ 1mA 21 nC @ 5 V ±15V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB20EN,115

PMPB20EN,115

MOSFET N-CH 30V 7.2A DFN2020MD-6

NXP USA Inc.
2,997 -

RFQ

PMPB20EN,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 19.5mOhm @ 7A, 10V 2V @ 250µA 10.8 nC @ 10 V ±20V 435 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB15XP,115

PMPB15XP,115

NOW NEXPERIA PMPB15XP - 8.2A, 12

NXP USA Inc.
2,666 -

RFQ

PMPB15XP,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 8.2A (Ta) 1.8V, 4.5V 19mOhm @ 8.2A, 4.5V 900mV @ 250µA 100 nC @ 4.5 V ±12V 2875 pF @ 6 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002BK,215

2N7002BK,215

SMALL SIGNAL FIELD-EFFECT TRANSI

NXP USA Inc.
2,052 -

RFQ

2N7002BK,215

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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