Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7Y9R9-80EX

BUK7Y9R9-80EX

TRANSISTOR >30MHZ

NXP USA Inc.
3,789 -

RFQ

BUK7Y9R9-80EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 10V 98mOhm @ 5A, 10V 4V @ 1mA 51.6 nC @ 10 V ±20V 498 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R6-40E,118

BUK961R6-40E,118

120A, 40V, 0.0016OHM, N-CHANNEL

NXP USA Inc.
3,007 -

RFQ

BUK961R6-40E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V 1.4mOhm @ 25A, 10V 2.1V @ 1mA 120 nC @ 5 V ±10V 16400 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y12-100EX

BUK7Y12-100EX

MOSFET N-CH 100V 85A LFPAK56

NXP USA Inc.
2,686 -

RFQ

BUK7Y12-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 1mA 68 nC @ 10 V ±20V 5067 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y6R0-60EX

BUK7Y6R0-60EX

TRANSISTOR >30MHZ

NXP USA Inc.
2,483 -

RFQ

BUK7Y6R0-60EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 45.4 nC @ 10 V ±20V 4021 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK769R6-80E,118

BUK769R6-80E,118

MOSFET N-CH 80V 75A D2PAK

NXP USA Inc.
2,983 -

RFQ

BUK769R6-80E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 9.6mOhm @ 20A, 10V 4V @ 1mA 59.8 nC @ 10 V ±20V 4682 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

NXP USA Inc.
3,204 -

RFQ

BUK762R6-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9E04-40A,127

BUK9E04-40A,127

MOSFET N-CH 40V 75A I2PAK

NXP USA Inc.
3,153 -

RFQ

BUK9E04-40A,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.3V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 128 nC @ 5 V ±15V 8260 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK766R0-60E,118

BUK766R0-60E,118

MOSFET N-CH 60V 75A D2PAK

NXP USA Inc.
3,208 -

RFQ

BUK766R0-60E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y18-55B,115

BUK7Y18-55B,115

NOW NEXPERIA BUK7Y18-55B - 47.4A

NXP USA Inc.
2,122 -

RFQ

BUK7Y18-55B,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 47.4A (Tc) 10V 18mOhm @ 20A, 10V 4V @ 1mA 21.9 nC @ 10 V ±20V 1263 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y65-100EX

BUK7Y65-100EX

TRANSISTOR >30MHZ

NXP USA Inc.
2,762 -

RFQ

BUK7Y65-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 65mOhm @ 5A, 10V 4V @ 1mA 17.8 nC @ 10 V ±20V 1023 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMZB290UNE,315

PMZB290UNE,315

MOSFET N-CH 20V 1A DFN1006B-3

NXP USA Inc.
2,235 -

RFQ

PMZB290UNE,315

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN020-30MLCX

PSMN020-30MLCX

TRANSISTOR >30MHZ

NXP USA Inc.
2,767 -

RFQ

PSMN020-30MLCX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 31.8A (Tc) 4.5V, 10V 18.1mOhm @ 5A, 10V 1.95V @ 1mA 9.5 nC @ 10 V ±20V 430 pF @ 15 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y12-55B,115

BUK9Y12-55B,115

NOW NEXPERIA BUK9Y12-55B - 61.8A

NXP USA Inc.
3,704 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 61.8A (Tc) 5V, 10V 11mOhm @ 20A, 10V 2.15V @ 1mA 32 nC @ 5 V ±15V 2880 pF @ 25 V - 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS84AKM,315

BSS84AKM,315

NOW NEXPERIA BSS84AKM - SMALL SI

NXP USA Inc.
2,442 -

RFQ

BSS84AKM,315

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 50 V 230mA (Ta) 10V 7.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 5 V ±20V 36 pF @ 25 V - 340mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7Y72-80EX

BUK7Y72-80EX

TRANSISTOR >30MHZ

NXP USA Inc.
2,201 -

RFQ

BUK7Y72-80EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Tc) 10V 72mOhm @ 5A, 10V 4V @ 1mA 9.8 nC @ 10 V ±20V 633 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9840-55/CUX

BUK9840-55/CUX

MOSFET N-CH 55V 5A/10.7A SOT223

NXP USA Inc.
2,293 -

RFQ

BUK9840-55/CUX

Ficha técnica

Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5A (Ta), 10.7A (Tc) 5V 40mOhm @ 5A, 5V 2V @ 1mA - ±10V 1400 pF @ 25 V - 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9M6R6-30EX

BUK9M6R6-30EX

BUK9M6R6-30E - N-CHANNEL 30V, LO

NXP USA Inc.
2,667 -

RFQ

BUK9M6R6-30EX

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 5V 5.3mOhm @ 20A, 10V 2.1V @ 1mA 18 nC @ 5 V ±10V 2001 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y59-60E,115

BUK9Y59-60E,115

N-CHANNEL 60 V, 59 MILLI OHMS LO

NXP USA Inc.
2,440 -

RFQ

BUK9Y59-60E,115

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 16.7A (Tc) 5V 52mOhm @ 5A, 10V 2.1V @ 1mA 6.1 nC @ 5 V ±10V 715 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y15-100EX

BUK7Y15-100EX

MOSFET N-CH 100V 68A LFPAK56

NXP USA Inc.
2,571 -

RFQ

BUK7Y15-100EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 68A (Tc) 10V 15mOhm @ 20A, 10V 4V @ 1mA 54.5 nC @ 10 V ±20V 3958 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMZB350UPE,315

PMZB350UPE,315

NOW NEXPERIA PMZB350UPE - SMALL

NXP USA Inc.
3,845 -

RFQ

PMZB350UPE,315

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 450mOhm @ 300mA, 4.5V 950mV @ 250µA 1.9 nC @ 4.5 V ±8V 127 pF @ 10 V - 360mW (Ta), 3.125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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