Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STWA40N95K5

STWA40N95K5

MOSFET N-CH 950V 38A TO247-3

STMicroelectronics
2,566 -

RFQ

STWA40N95K5

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 950 V 38A (Tc) 10V 130mOhm @ 19A, 10V 5V @ 100µA 93 nC @ 10 V ±30V 3300 pF @ 100 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW40N90K5

STW40N90K5

MOSFET N-CH 900V 40A TO247

STMicroelectronics
2,195 -

RFQ

STW40N90K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 99mOhm @ 20A, 10V 5V @ 100µA 89 nC @ 10 V ±30V 3260 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW60NM50N

STW60NM50N

MOSFET N-CH 500V 68A TO247

STMicroelectronics
2,438 -

RFQ

STW60NM50N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 68A (Tc) 10V 43mOhm @ 34A, 10V 4V @ 250µA 178 nC @ 10 V ±25V 5790 pF @ 100 V - 446W (Tc) 150°C (TJ) Through Hole
SCT30N120D2

SCT30N120D2

SICFET N-CH 1200V 40A HIP247

STMicroelectronics
2,385 -

RFQ

Tray - Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 20V 100mOhm @ 20A, 20V 3.5V @ 1mA 105 nC @ 20 V +25V, -10V 1700 pF @ 400 V - 270W (Tc) -55°C ~ 200°C (TJ) Through Hole
STY60NM60

STY60NM60

MOSFET N-CH 600V 60A MAX247

STMicroelectronics
3,096 -

RFQ

STY60NM60

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 560W (Tc) 150°C (TJ) Through Hole
SCTH60N120G2-7

SCTH60N120G2-7

PTD WBG & POWER RF

STMicroelectronics
2,022 -

RFQ

SCTH60N120G2-7

Ficha técnica

Tape & Reel (TR) - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 10V 5V @ 1mA 94 nC @ 18 V +22V, -10V 1969 pF @ 800 V - 390W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STY112N65M5

STY112N65M5

MOSFET N-CH 650V 96A MAX247

STMicroelectronics
3,563 -

RFQ

STY112N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 47A, 10V 5V @ 250µA 350 nC @ 10 V ±25V 16870 pF @ 100 V - 625W (Tc) 150°C (TJ) Through Hole
STE40NC60

STE40NC60

MOSFET N-CH 600V 40A ISOTOP

STMicroelectronics
2,847 -

RFQ

STE40NC60

Ficha técnica

Tube PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 20A, 10V 4V @ 250µA 430 nC @ 10 V ±30V 11100 pF @ 25 V - 460W (Tc) 150°C (TJ) Chassis Mount
STE70NM60

STE70NM60

MOSFET N-CH 600V 70A ISOTOP

STMicroelectronics
3,197 -

RFQ

STE70NM60

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 600W (Tc) 150°C (TJ) Chassis Mount
STP200N3LL

STP200N3LL

MOSFET N-CH 30V 120A TO220

STMicroelectronics
937 -

RFQ

STP200N3LL

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 2.4mOhm @ 60A, 10V 2.5V @ 250µA 53 nC @ 4.5 V ±20V 5200 pF @ 25 V - 176.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP160N3LL

STP160N3LL

MOSFET N-CH 30V 120A TO220

STMicroelectronics
717 -

RFQ

STP160N3LL

Ficha técnica

Tube STripFET™ H6 Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 3.2mOhm @ 60A, 10V 2.5V @ 250µA 42 nC @ 4.5 V ±20V 3500 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP120NF10

STP120NF10

MOSFET N-CH 100V 110A TO220AB

STMicroelectronics
7,580 -

RFQ

STP120NF10

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 10.5mOhm @ 60A, 10V 4V @ 250µA 233 nC @ 10 V ±20V 5200 pF @ 25 V - 312W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW45N65M5

STW45N65M5

MOSFET N-CH 650V 35A TO247

STMicroelectronics
2,412 -

RFQ

STW45N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 19.5A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 3375 pF @ 100 V - 210W (Tc) 150°C (TJ) Through Hole
STB4NK60ZT4

STB4NK60ZT4

MOSFET N-CH 600V 4A D2PAK

STMicroelectronics
1,540 -

RFQ

STB4NK60ZT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) Surface Mount
STP7N60M2

STP7N60M2

MOSFET N-CH 600V 5A TO220

STMicroelectronics
562 -

RFQ

STP7N60M2

Ficha técnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 950mOhm @ 2.5A, 10V 4V @ 250µA 8.8 nC @ 10 V ±25V 271 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP6NK60Z

STP6NK60Z

MOSFET N-CH 600V 6A TO220AB

STMicroelectronics
990 -

RFQ

STP6NK60Z

Ficha técnica

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP55NF06L

STP55NF06L

MOSFET N-CH 60V 55A TO220AB

STMicroelectronics
130 -

RFQ

STP55NF06L

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V, 5V 18mOhm @ 27.5A, 10V 1.7V @ 250µA 37 nC @ 4.5 V ±16V 1700 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP19NF20

STP19NF20

MOSFET N-CH 200V 15A TO220AB

STMicroelectronics
1,476 -

RFQ

STP19NF20

Ficha técnica

Tube MESH OVERLAY™ Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 160mOhm @ 7.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 800 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF20NF20

STF20NF20

MOSFET N-CH 200V 18A TO220FP

STMicroelectronics
700 -

RFQ

STF20NF20

Ficha técnica

Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 125mOhm @ 10A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 940 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP110N8F6

STP110N8F6

MOSFET N-CH 80V 110A TO220

STMicroelectronics
189 -

RFQ

STP110N8F6

Ficha técnica

Tube STripFET™ F6 Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 6.5mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 9130 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 2402 Record«Prev1... 110111112113114115116117...121Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario