Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT50N120

SCT50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics
509 -

RFQ

SCT50N120

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) Through Hole
STL45N65M5

STL45N65M5

MOSFET N-CH 650V 22.5A PWRFLAT

STMicroelectronics
2,273 -

RFQ

STL45N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 3.8A (Ta), 22.5A (Tc) 10V 86mOhm @ 14.5A, 10V 5V @ 250µA 82 nC @ 10 V ±25V 3470 pF @ 100 V - 2.8W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STWA20N95DK5

STWA20N95DK5

MOSFET N-CH 950V 18A TO247

STMicroelectronics
3,725 -

RFQ

STWA20N95DK5

Ficha técnica

Tube MDmesh™ DK5 Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA67N60M6

STWA67N60M6

MOSFET N-CH 600V 52A TO247

STMicroelectronics
3,515 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA50N65DM2AG

STWA50N65DM2AG

MOSFET N-CH 650V 38A TO247

STMicroelectronics
2,777 -

RFQ

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 87mOhm @ 19A, 10V 5V @ 250µA 69 nC @ 10 V ±25V 3200 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA48N60M6

STWA48N60M6

MOSFET N-CH 600V 39A TO247

STMicroelectronics
3,692 -

RFQ

STWA48N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 69mOhm @ 19.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V 2578 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW33N60M6

STW33N60M6

MOSFET N-CH 600V TO247

STMicroelectronics
2,706 -

RFQ

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tj) - - - - - - - - - Through Hole
STP318N4F6

STP318N4F6

MOSFET N-CH 40V 160A TO220

STMicroelectronics
3,895 -

RFQ

STP318N4F6

Ficha técnica

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 13800000 pF @ 25 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
STFW45N65M5

STFW45N65M5

MOSFET N-CH 650V 35A ISOWATT

STMicroelectronics
2,784 -

RFQ

STFW45N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 17.5A, 10V 5V @ 250µA 82 nC @ 10 V ±25V 3470 pF @ 100 V - 57W (Tc) 150°C (TJ) Through Hole
STW34N65M5

STW34N65M5

MOSFET N-CH 650V 28A TO247

STMicroelectronics
2,474 -

RFQ

STW34N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
STW48N60M6-4

STW48N60M6-4

MOSFET N-CH 600V 39A TO247-4

STMicroelectronics
2,049 -

RFQ

STW48N60M6-4

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 69mOhm @ 19.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V 2578 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF20N95K5

STF20N95K5

MOSFET N-CH 950V 17.5A TO220FP

STMicroelectronics
2,968 -

RFQ

STF20N95K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF42N65M5

STF42N65M5

MOSFET N-CH 650V 33A TO220FP

STMicroelectronics
3,480 -

RFQ

STF42N65M5

Ficha técnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 79mOhm @ 16.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 4650 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
STB32N65M5

STB32N65M5

MOSFET N-CH 650V 24A D2PAK

STMicroelectronics
3,678 -

RFQ

STB32N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Surface Mount
STB34NM60N

STB34NM60N

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics
2,725 -

RFQ

STB34NM60N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) Surface Mount
STW56N65M2-4

STW56N65M2-4

MOSFET N-CH 650V 49A TO247-4L

STMicroelectronics
2,971 -

RFQ

STW56N65M2-4

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 49A (Tc) 10V 62mOhm @ 24.5A, 10V 4V @ 250µA 93 nC @ 10 V ±25V 3900 pF @ 100 V - 358W (Tc) 150°C (TJ) Through Hole
STW70N60M2-4

STW70N60M2-4

MOSFET N-CH 600V 68A TO247

STMicroelectronics
2,294 -

RFQ

STW70N60M2-4

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 68A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 118 nC @ 10 V ±25V 5200 pF @ 100 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA72N60DM2AG

STWA72N60DM2AG

MOSFET N-CH 600V 66A TO247

STMicroelectronics
2,556 -

RFQ

STWA72N60DM2AG

Ficha técnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 42mOhm @ 33A, 10V 5V @ 250µA 121 nC @ 10 V ±25V 5508 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW42N60M2-EP

STFW42N60M2-EP

MOSFET N-CH 600V 34A ISOWATT

STMicroelectronics
3,483 -

RFQ

STFW42N60M2-EP

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 87mOhm @ 17A, 10V 4V @ 250µA 55 nC @ 10 V ±25V 2370 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF26NM60N

STF26NM60N

MOSFET N-CH 600V 20A TO220FP

STMicroelectronics
3,622 -

RFQ

STF26NM60N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 10A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1800 pF @ 50 V - 35W (Tc) 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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