Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTBLS4D0N15MC

NTBLS4D0N15MC

MOSFET N-CH 150V 19A/187A 8HPSOF

onsemi
2,366 -

RFQ

NTBLS4D0N15MC

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 19A (Ta), 187A (Tc) 8V, 10V 4.4mOhm @ 80A, 10V 4.5V @ 584µA 90.4 nC @ 10 V ±20V 7490 pF @ 75 V - 3.4W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB032N10N5ATMA1

IPB032N10N5ATMA1

MOSFET N-CH 100V 166A TO263-7

Infineon Technologies
2,654 -

RFQ

IPB032N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3.2mOhm @ 83A, 10V 3.8V @ 125µA 95 nC @ 10 V ±20V 6970 pF @ 50 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS240N08S5N019ATMA1

IAUS240N08S5N019ATMA1

MOSFET N-CH 80V 240A HSOG-8

Infineon Technologies
2,174 -

RFQ

IAUS240N08S5N019ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 160µA 130 nC @ 10 V ±20V 9264 pF @ 40 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPW1R306PL,L1Q

TPW1R306PL,L1Q

MOSFET N-CH 60V 260A 8DSOP

Toshiba Semiconductor and Storage
2,909 -

RFQ

TPW1R306PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 260A (Tc) 4.5V, 10V 1.29mOhm @ 50A, 10V 2.5V @ 1mA 91 nC @ 10 V ±20V 8100 pF @ 30 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
TPWR6003PL,L1Q

TPWR6003PL,L1Q

MOSFET N-CH 30V 150A 8DSOP

Toshiba Semiconductor and Storage
2,021 -

RFQ

TPWR6003PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.6mOhm @ 50A, 10V 2.1V @ 1mA 110 nC @ 10 V ±20V 10000 pF @ 15 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
SI7478DP-T1-GE3

SI7478DP-T1-GE3

MOSFET N-CH 60V 15A PPAK SO-8

Vishay Siliconix
3,378 -

RFQ

SI7478DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 4.5V, 10V 7.5mOhm @ 20A, 10V 3V @ 250µA 160 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP045N10N3GXKSA1

IPP045N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
2,828 -

RFQ

IPP045N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDJ127P

FDJ127P

MOSFET P-CH 20V 4.1A SC75-6 FLMP

onsemi
2,801 -

RFQ

FDJ127P

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 1.8V, 4.5V 60mOhm @ 4.1A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 780 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDR6580

FDR6580

MOSFET N-CH 20V 11.2A SUPERSOT8

onsemi
2,147 -

RFQ

FDR6580

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 11.2A (Ta) 2.5V, 4.5V 9mOhm @ 11.2A, 4.5V 1.5V @ 250µA 48 nC @ 4.5 V ±8V 3829 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDU3706

FDU3706

MOSFET N-CH 20V 14.7A/50A IPAK

onsemi
2,333 -

RFQ

FDU3706

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 14.7A (Ta), 50A (Tc) 2.5V, 10V 9mOhm @ 16.2A, 10V 1.5V @ 250µA 23 nC @ 4.5 V ±12V 1882 pF @ 10 V - 3.8W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDFC3N108

FDFC3N108

MOSFET N-CH 20V 3A SUPERSOT6

onsemi
3,223 -

RFQ

FDFC3N108

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 70mOhm @ 3A, 4.5V 1.5V @ 250µA 4.9 nC @ 4.5 V ±12V 355 pF @ 10 V Schottky Diode (Isolated) - -55°C ~ 150°C (TJ) Surface Mount
FDP5690

FDP5690

MOSFET N-CH 60V 32A TO220-3

onsemi
3,115 -

RFQ

FDP5690

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 6V, 10V 27mOhm @ 16A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 1120 pF @ 25 V - 58W (Tc) -65°C ~ 175°C (TJ) Through Hole
FDS4770

FDS4770

MOSFET N-CH 40V 13.2A 8SOIC

onsemi
3,906 -

RFQ

FDS4770

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 13.2A (Ta) 10V 7.5mOhm @ 13.2A, 10V 5V @ 250µA 67 nC @ 10 V ±20V 2819 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDU6296

FDU6296

MOSFET N-CH 30V 15A/50A IPAK

onsemi
2,184 -

RFQ

FDU6296

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6675A

FDS6675A

MOSFET P-CH 30V 11A 8SOIC

onsemi
3,203 -

RFQ

FDS6675A

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13mOhm @ 11A, 10V 3V @ 250µA 34 nC @ 5 V ±25V 2330 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDS6688S

FDS6688S

MOSFET N-CH 30V 16A 8SOIC

onsemi
3,462 -

RFQ

FDS6688S

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6mOhm @ 16A, 10V 3V @ 1mA 78 nC @ 10 V ±20V 3290 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDU044AN03L

FDU044AN03L

MOSFET N-CH 30V 21A/35A IPAK

onsemi
3,701 -

RFQ

FDU044AN03L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 35A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

onsemi
2,118 -

RFQ

FDU068AN03L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU8870

FDU8870

MOSFET N-CH 30V 21A/160A IPAK

onsemi
3,490 -

RFQ

FDU8870

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 118 nC @ 10 V ±20V 5160 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

onsemi
3,096 -

RFQ

FDD068AN03L

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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