Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6530KNZ4C13

R6530KNZ4C13

650V 30A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor
441 -

RFQ

R6530KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 305W (Tc) 150°C (TJ) Through Hole
R6535KNX3C16

R6535KNX3C16

650V 35A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor
680 -

RFQ

R6535KNX3C16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 5V @ 1.3mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 370W (Tc) 150°C (TJ) Through Hole
R6535ENZ4C13

R6535ENZ4C13

650V 35A TO-247, LOW-NOISE POWER

Rohm Semiconductor
571 -

RFQ

R6535ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 115mOhm @ 18.1A, 10V 4V @ 1.21mA 110 nC @ 10 V ±20V 2600 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
R6535KNZ4C13

R6535KNZ4C13

650V 35A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor
528 -

RFQ

R6535KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 115mOhm @ 18.1A, 10V 5V @ 1.21mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
R6547ENZ4C13

R6547ENZ4C13

650V 47A TO-247, LOW-NOISE POWER

Rohm Semiconductor
509 -

RFQ

R6547ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 80mOhm @ 25.8A, 10V 4V @ 1.72mA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 480W (Tc) 150°C (TJ) Through Hole
R5016FNJTL

R5016FNJTL

MOSFET N-CH 500V 16A LPT

Rohm Semiconductor
816 -

RFQ

R5016FNJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) * Not For New Designs - - - - - - - - - - - - - -
ES6U1T2R

ES6U1T2R

MOSFET P-CH 12V 1.3A 6WEMT

Rohm Semiconductor
8,330 -

RFQ

ES6U1T2R

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.3A (Ta) 1.5V, 4.5V 260mOhm @ 1.3A, 4.5V 1V @ 1mA 2.4 nC @ 4.5 V ±10V 290 pF @ 6 V Schottky Diode (Isolated) 700mW (Ta) 150°C (TJ) Surface Mount
R6576KNZ4C13

R6576KNZ4C13

650V 76A TO-247, HIGH-SPEED SWIT

Rohm Semiconductor
504 -

RFQ

R6576KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 46mOhm @ 44.4A, 10V 5V @ 2.96mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
R6070JNZ4C13

R6070JNZ4C13

600V 70A TO-247, PRESTOMOS WITH

Rohm Semiconductor
600 -

RFQ

R6070JNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 15V 58mOhm @ 35A, 15V 7V @ 3mA 165 nC @ 15 V ±30V 6000 pF @ 100 V - 770W (Tc) 150°C (TJ) Through Hole
R6576ENZ4C13

R6576ENZ4C13

650V 76A TO-247, LOW-NOISE POWER

Rohm Semiconductor
597 -

RFQ

R6576ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Ta) 10V 46mOhm @ 44.4A, 10V 4V @ 2.96mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
RV5A040APTCR1

RV5A040APTCR1

MOSFET P-CH 12V 4A DFN1616-6

Rohm Semiconductor
3,000 -

RFQ

RV5A040APTCR1

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 12 V 4A (Ta) 1.5V, 4.5V 62mOhm @ 4A, 4.5V 1V @ 1mA 16 nC @ 4.5 V -8V, 0V 2000 pF @ 6 V - 700mW (Ta) 150°C (TJ) Surface Mount
2SK3019TL

2SK3019TL

MOSFET N-CH 30V 100MA EMT3

Rohm Semiconductor
125,794 -

RFQ

2SK3019TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 8Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13 pF @ 5 V - 150mW (Ta) 150°C (TJ) Surface Mount
2SK3018T106

2SK3018T106

MOSFET N-CH 30V 100MA UMT3

Rohm Semiconductor
51,460 -

RFQ

2SK3018T106

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 8Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 13 pF @ 5 V - 200mW (Ta) 150°C (TJ) Surface Mount
RTF010P02TL

RTF010P02TL

MOSFET P-CH 20V 1A TUMT3

Rohm Semiconductor
11,675 -

RFQ

RTF010P02TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 390mOhm @ 1A, 4.5V 2V @ 1mA 2.1 nC @ 4.5 V ±12V 150 pF @ 10 V - 800mW (Ta) 150°C (TJ) Surface Mount
R6046ANZ1C9

R6046ANZ1C9

MOSFET N-CH 600V 46A TO247

Rohm Semiconductor
448 -

RFQ

R6046ANZ1C9

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 90mOhm @ 23A, 10V 4.5V @ 1mA 150 nC @ 10 V ±30V 6000 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6046FNZ1C9

R6046FNZ1C9

MOSFET N-CH 600V 46A TO247

Rohm Semiconductor
282 -

RFQ

R6046FNZ1C9

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 98mOhm @ 23A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 6230 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
RRH050P03GZETB

RRH050P03GZETB

MOSFET P-CH 30V 5A 8SOIC

Rohm Semiconductor
398 -

RFQ

RRH050P03GZETB

Ficha técnica

Cut Tape (CT) * Active - - - - - - - - - - - - - -
RMW150N03TB

RMW150N03TB

MOSFET N-CH 30V 15A 8PSOP

Rohm Semiconductor
1,738 -

RFQ

RMW150N03TB

Ficha técnica

Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
RP1E050RPTR

RP1E050RPTR

MOSFET P-CH 30V 5A MPT6

Rohm Semiconductor
2,411 -

RFQ

RP1E050RPTR

Ficha técnica

Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
RS1E300GNTB

RS1E300GNTB

MOSFET N-CH 30V 30A 8-HSOP

Rohm Semiconductor
3,457 -

RFQ

RS1E300GNTB

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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