Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUA250N04S6N008AUMA1

IAUA250N04S6N008AUMA1

OPTIMOS POWER MOSFET

Infineon Technologies
1,983 -

RFQ

IAUA250N04S6N008AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 51A (Ta) 7V, 10V 0.8mOhm @ 100A, 10V 3V @ 90µA 109 nC @ 10 V ±20V 7088 pF @ 25 V - 172W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP8440

FDP8440

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
18,984 -

RFQ

FDP8440

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF20N60T

FCPF20N60T

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,000 -

RFQ

FCPF20N60T

Ficha técnica

Bulk,Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS7734TRL7PP

IRFS7734TRL7PP

MOSFET N-CH 75V 197A D2PAK

Infineon Technologies
771 -

RFQ

IRFS7734TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 197A (Tc) 6V, 10V 3.05mOhm @ 100A, 10V 3.7V @ 150µA 270 nC @ 10 V ±20V 10130 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9383MTRPBF

IRF9383MTRPBF

MOSFET P-CH 30V 22A DIRECTFET

Infineon Technologies
3,391 -

RFQ

IRF9383MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISC0802NLSATMA1

ISC0802NLSATMA1

MOSFET N-CH 100V 22A/150A TDSON

Infineon Technologies
3,314 -

RFQ

ISC0802NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Ta), 150A (Tc) 4.5V, 10V 3.6mOhm @ 50A, 10V 2.3V @ 92µA 73 nC @ 10 V ±20V 5190 pF @ 50 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTE2991

NTE2991

MOSFET PWR N-CH 55V 110A TO-220

NTE Electronics, Inc
140 -

RFQ

NTE2991

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8Ohm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0402NSATMA1

BSC0402NSATMA1

150V, N-CH MOSFET, LOGIC LEVEL

Infineon Technologies
6,599 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - -
IRLS3813TRLPBF

IRLS3813TRLPBF

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies
109 -

RFQ

IRLS3813TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SST214 SOT-143 4L

SST214 SOT-143 4L

HIGH SPEED N-CHANNEL LATERAL DMO

Linear Integrated Systems, Inc.
950 -

RFQ

SST214 SOT-143 4L

Ficha técnica

Tape & Reel (TR) SST214 Active N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 5V, 25V 50Ohm @ 1mA, 10V 1.5V @ 1µA - ±40V - - 300mW (Ta) -55°C ~ 125°C (TJ) Surface Mount
FCH130N60

FCH130N60

MOSFET N-CH 600V 28A TO247-3

Fairchild Semiconductor
144 -

RFQ

FCH130N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75842P3

HUF75842P3

MOSFET N-CH 150V 43A TO220-3

Fairchild Semiconductor
4,636 -

RFQ

HUF75842P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL65R230C7AUMA1

IPL65R230C7AUMA1

MOSFET N-CH 650V 10A 4VSON

Infineon Technologies
808 -

RFQ

IPL65R230C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 230mOhm @ 2.4A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 67W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF3004WL

AUIRF3004WL

MOSFET N-CH 40V 240A TO262-3

International Rectifier
1,509 -

RFQ

AUIRF3004WL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 195A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9450 pF @ 32 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3435-AZ

2SK3435-AZ

2SK3435-AZ - SWITCHING N-CHANNEL

Renesas
1,213 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 14mOhm @ 40A, 10V 2.5V @ 1mA 60 nC @ 10 V ±20V 3200 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C Through Hole
IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
762 -

RFQ

IPB80N06S2L06ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 6mOhm @ 69A, 10V 2V @ 180µA 150 nC @ 10 V ±20V 3800 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DIT120N08

DIT120N08

MOSFET, TO-220AB, 80V, 120A, N

Diotec Semiconductor
4,500 -

RFQ

DIT120N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 6mOhm @ 40A, 10V 4V @ 250µA 163 nC @ 10 V ±20V 6500 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ)
HUFA75645S3S

HUFA75645S3S

MOSFET N-CH 100V 75A D2PAK

Fairchild Semiconductor
1,729 -

RFQ

HUFA75645S3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7534TRLPBF

IRFS7534TRLPBF

MOSFET N CH 60V 195A D2PAK

Infineon Technologies
415 -

RFQ

IRFS7534TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.7V @ 250µA 279 nC @ 10 V ±20V 10034 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP88N04NUG-S18-AY

NP88N04NUG-S18-AY

NP88N04NUG-S18-AY - MOS FIELD EF

Renesas
1,450 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 88A (Tc) 10V 3.4mOhm @ 44A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 15000 pF @ 25 V - 1.8W (Ta), 200W (Tc) 175°C Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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