Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPTG054N15NM5ATMA1

IPTG054N15NM5ATMA1

TRENCH >=100V

Infineon Technologies
3,414 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R039M1HXUMA1

IMT65R039M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies
2,616 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPP017N06NF2SAKMA1

IPP017N06NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
2,839 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPP013N06NF2SAKMA1

IPP013N06NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
2,346 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
FQB11P06TM

FQB11P06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,678 -

RFQ

FQB11P06TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70R1K4CEAUMA1

IPD70R1K4CEAUMA1

MOSFET N-CH 700V 5.4A TO252-3

Infineon Technologies
1,019 -

RFQ

IPD70R1K4CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 130µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V Super Junction 53W (Tc) -40°C ~ 150°C (TJ) Surface Mount
GT55N06D5

GT55N06D5

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

Goford Semiconductor
2,231 -

RFQ

GT55N06D5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 53A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1988 pF @ 30 V - 70W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DI020N06D1

DI020N06D1

MOSFET, TO-252AA/D-PAK, 60V, 20A

Diotec Semiconductor
12,500 -

RFQ

DI020N06D1

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 35mOhm @ 20A, 10V 2.5V @ 250µA 25.3 nC @ 10 V ±20V 590 pF @ 15 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ4466AP-AU_R2_000A1

PJQ4466AP-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,900 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 33A (Tc) 4.5V, 10V 21mOhm @ 15A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 20 V - 2.4W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC080N03MSGATMA1

BSC080N03MSGATMA1

MOSFET N-CH 30V 13A/53A TDSON

Infineon Technologies
5,000 -

RFQ

BSC080N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 53A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2V @ 250µA 27 nC @ 10 V ±20V 2100 pF @ 15 V - 2.5W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT650N15K

GT650N15K

N150V,RD(MAX)<65M@10V,VTH2.5V~4.

Goford Semiconductor
2,460 -

RFQ

GT650N15K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Tc) 10V 65mOhm @ 10A, 10V 4.5V @ 250µA 12 nC @ 10 V ±20V 600 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJQ5466A1-AU_R2_000A1

PJQ5466A1-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,995 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 48A (Tc) 4.5V, 10V 17mOhm @ 20A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 1574 pF @ 25 V - 2.4W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN70R600P7SATMA1

IPN70R600P7SATMA1

MOSFET N-CH 700V 8.5A SOT223

Infineon Technologies
2,983 -

RFQ

IPN70R600P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 6.9W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PJQ4443P-AU_R2_000A1

PJQ4443P-AU_R2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,900 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 8.8A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2.1W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5304TRPBF

IRFH5304TRPBF

MOSFET N-CH 30V 22A/79A 8PQFN

Infineon Technologies
2,305 -

RFQ

IRFH5304TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 79A (Tc) 4.5V, 10V 4.5mOhm @ 47A, 10V 2.35V @ 50µA 41 nC @ 10 V ±20V 2360 pF @ 10 V - 3.6W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD78CN10NGATMA1

IPD78CN10NGATMA1

MOSFET N-CH 100V 13A TO252-3

Infineon Technologies
23,901 -

RFQ

IPD78CN10NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 78mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP321PH6327XTSA1

BSP321PH6327XTSA1

MOSFET P-CH 100V 980MA SOT223-4

Infineon Technologies
1,288 -

RFQ

BSP321PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 100 V 980mA (Tc) 10V 900mOhm @ 980mA, 10V 4V @ 380µA 12 nC @ 10 V ±20V 319 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSF030NE2LQXUMA1

BSF030NE2LQXUMA1

MOSFET N-CH 25V 24A/75A 2WDSON

Infineon Technologies
4,985 -

RFQ

BSF030NE2LQXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 75A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 23 nC @ 10 V ±20V 1700 pF @ 12 V - 2.2W (Ta), 28W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFZ46ZSTRLPBF

IRFZ46ZSTRLPBF

IRFZ46 - 12V-300V N-CHANNEL POWE

International Rectifier
63,576 -

RFQ

IRFZ46ZSTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R800CEAUMA1

IPD60R800CEAUMA1

CONSUMER

Infineon Technologies
2,271 -

RFQ

IPD60R800CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 74W (Tc) -40°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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