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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PJD50N04_L2_0000140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,490 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.6A (Ta), 50A (Tc) | 4.5V, 10V | 9.5mOhm @ 8A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 1258 pF @ 25 V | - | 2W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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IRF8327STRPBFMOSFET N-CH 30V 14A/60A DIRECTFT International Rectifier |
25,238 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14 nC @ 4.5 V | ±20V | 1430 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
FDM6296-GFDM6296 - TBD_25CH onsemi |
12,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
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PJD70P03_L2_0000130V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,971 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 70A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | ±20V | 3228 pF @ 15 V | - | 2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
G12P10KP100V,RD(MAX)<200M@-10V,RD(MAX)< Goford Semiconductor |
2,212 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A | - | 200mOhm @ 6A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1720 pF @ 50 V | - | 57W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPN70R1K4P7SATMA1MOSFET N-CHANNEL 700V 4A SOT223 Infineon Technologies |
2,537 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7 nC @ 10 V | ±16V | 158 pF @ 400 V | - | 6.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
BSP89H6327XTSA1MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
1,773 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Active | N-Channel | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 4.5V, 10V | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJW7N06A-AU_R2_000A160V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
1,175 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6.6A (Ta) | 4.5V, 10V | 34mOhm @ 6A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 1173 pF @ 25 V | - | 3.7W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | |
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GT52N10D5N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Goford Semiconductor |
12,635 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 71A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | 44.5 nC @ 10 V | ±20V | 2626 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
GT100N12D5N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A | - | 10mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 120W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
PJD80N04_L2_0000140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,960 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | ±20V | 1258 pF @ 25 V | - | 2W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
PJQ4401P-AU_R2_000A130V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
4,984 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | ±20V | 3228 pF @ 15 V | - | 2W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ5442_R2_0000140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,798 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 90A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | ±20V | 1258 pF @ 25 V | - | 2W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
G08P06D3P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Goford Semiconductor |
2,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 10V | 52mOhm @ 6A, 10V | 3.5V @ 250µA | 25 nC @ 10 V | ±20V | 2972 pF @ 30 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G60N04KN40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A | - | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 65W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
18N10N100V,RD(MAX)<53M@10V,RD(MAX)<63 Goford Semiconductor |
2,460 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A | - | 53mOhm @ 10A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1318 pF @ 50 V | - | 62.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
60N06N60V,RD(MAX)<17M@10V,RD(MAX)<21M Goford Semiconductor |
1,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A | - | 17mOhm @ 5A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 2050 pF @ 30 V | - | 85W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7606TRMOSFET P-CH 30V 3.6A MICRO8 Infineon Technologies |
1,111 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.4A, 10V | 1V @ 250µA | 30 nC @ 10 V | ±20V | 520 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQPF2N70MOSFET N-CH 700V 2A TO220F Fairchild Semiconductor |
42,241 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 2A (Tc) | 10V | 6.3Ohm @ 1A, 10V | 5V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BSC0906NSATMA1MOSFET N-CH 30V 18A/63A TDSON Infineon Technologies |
4,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 13 nC @ 10 V | ±20V | 870 pF @ 15 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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