Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB22N60M6

STB22N60M6

MOSFET N-CH 600V 15A D2PAK

STMicroelectronics
132 -

RFQ

STB22N60M6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 230mOhm @ 7.5A, 10V 4.75V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW9N80K5

STW9N80K5

MOSFET N-CHANNEL 800V 7A TO247

STMicroelectronics
501 -

RFQ

STW9N80K5

Ficha técnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 100µA 12 nC @ 10 V ±30V 340 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
R8006KNXC7G

R8006KNXC7G

HIGH-SPEED SWITCHING NCH 800V 6A

Rohm Semiconductor
890 -

RFQ

R8006KNXC7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Ta) 10V 900mOhm @ 3A, 10V 4.5V @ 4mA 22 nC @ 10 V ±20V 650 pF @ 100 V - 52W (Tc) 150°C (TJ) Through Hole
TSM10NC65CF C0G

TSM10NC65CF C0G

MOSFET N-CH 650V 10A ITO220S

Taiwan Semiconductor Corporation
808 -

RFQ

TSM10NC65CF C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 900mOhm @ 2A, 10V 4.5V @ 250µA 34 nC @ 10 V ±30V 1650 pF @ 50 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB9406-F085

FDB9406-F085

MOSFET N-CH 40V 110A D2PAK

onsemi
3,943 -

RFQ

FDB9406-F085

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.8mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 7710 pF @ 25 V - 176W (Tj) -55°C ~ 175°C (TJ) Surface Mount
R6509KNJTL

R6509KNJTL

MOSFET N-CH 650V 9A LPTS

Rohm Semiconductor
3,229 -

RFQ

R6509KNJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 5V @ 230µA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 94W (Tc) 150°C (TJ) Surface Mount
R6509ENJTL

R6509ENJTL

MOSFET N-CH 650V 9A LPTS

Rohm Semiconductor
3,909 -

RFQ

R6509ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 585mOhm @ 2.8A, 10V 4V @ 230µA 24 nC @ 10 V ±20V 430 pF @ 25 V - 94W (Tc) 150°C (TJ) Surface Mount
FQB34N20LTM

FQB34N20LTM

MOSFET N-CH 200V 31A D2PAK

onsemi
3,281 -

RFQ

FQB34N20LTM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 5V, 10V 75mOhm @ 15.5A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW21N65M5

STW21N65M5

MOSFET N-CH 650V 17A TO247-3

STMicroelectronics
3,733 -

RFQ

STW21N65M5

Ficha técnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
IRFR3711TRR

IRFR3711TRR

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
3,321 -

RFQ

IRFR3711TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5410TR

IRFR5410TR

MOSFET P-CH 100V 13A DPAK

Infineon Technologies
2,694 -

RFQ

IRFR5410TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5410TRL

IRFR5410TRL

MOSFET P-CH 100V 13A DPAK

Infineon Technologies
3,506 -

RFQ

IRFR5410TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5410TRR

IRFR5410TRR

MOSFET P-CH 100V 13A DPAK

Infineon Technologies
3,450 -

RFQ

IRFR5410TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9N20DTR

IRFR9N20DTR

MOSFET N-CH 200V 9.4A DPAK

Infineon Technologies
2,732 -

RFQ

IRFR9N20DTR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9N20DTRL

IRFR9N20DTRL

MOSFET N-CH 200V 9.4A DPAK

Infineon Technologies
3,310 -

RFQ

IRFR9N20DTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9N20DTRR

IRFR9N20DTRR

MOSFET N-CH 200V 9.4A DPAK

Infineon Technologies
2,353 -

RFQ

IRFR9N20DTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS17N20DTRL

IRFS17N20DTRL

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies
3,838 -

RFQ

IRFS17N20DTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS17N20DTRR

IRFS17N20DTRR

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies
2,127 -

RFQ

IRFS17N20DTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44RSTRR

IRFZ44RSTRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,124 -

RFQ

IRFZ44RSTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44VSTRL

IRFZ44VSTRL

MOSFET N-CH 60V 55A D2PAK

Infineon Technologies
3,236 -

RFQ

IRFZ44VSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 16.5mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1812 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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