Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK764R4-60E,118

BUK764R4-60E,118

MOSFET N-CH 60V 100A D2PAK

Nexperia USA Inc.
214 -

RFQ

BUK764R4-60E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.5mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF51N25RDTU

FDPF51N25RDTU

MOSFET N-CH 250V 51A TO220F

onsemi
666 -

RFQ

FDPF51N25RDTU

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 60mOhm @ 25.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 3410 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8N80C

FQPF8N80C

MOSFET N-CH 800V 8A TO220F

onsemi
306 -

RFQ

FQPF8N80C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.55Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2050 pF @ 25 V - 59W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020KNZ1C9

R6020KNZ1C9

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor
160 -

RFQ

R6020KNZ1C9

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) -55°C ~ 150°C (TJ) Through Hole
BFL4026-1E

BFL4026-1E

MOSFET N-CH 900V 3.5A TO220F-3FS

onsemi
2,772 -

RFQ

BFL4026-1E

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.5A (Tc) 10V 3.6Ohm @ 2.5A, 10V - 33 nC @ 10 V ±30V 650 pF @ 30 V - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL12N65M5

STL12N65M5

MOSFET N-CH 650V 8.5A POWERFLAT

STMicroelectronics
2,142 -

RFQ

STL12N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 530mOhm @ 4.25A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 644 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP2002UPS-13

DMP2002UPS-13

MOSFET P-CH 20V 60A PWRDI5060-8

Diodes Incorporated
400 -

RFQ

DMP2002UPS-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.9mOhm @ 25A, 10V 1.4V @ 250µA 585 nC @ 10 V ±12V 12826 pF @ 10 V - 2.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIRA99DP-T1-GE3

SIRA99DP-T1-GE3

MOSFET P-CH 30V 47.9A/195A PPAK

Vishay Siliconix
300 -

RFQ

SIRA99DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 47.9A (Ta), 195A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.5V @ 250µA 260 nC @ 10 V +16V, -20V 10955 pF @ 15 V - 6.35W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75639S3ST

HUF75639S3ST

MOSFET N-CH 100V 56A D2PAK

onsemi
577 -

RFQ

HUF75639S3ST

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP10N62K3

STP10N62K3

MOSFET N-CH 620V 8.4A TO220AB

STMicroelectronics
813 -

RFQ

STP10N62K3

Ficha técnica

Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 620 V 8.4A (Tc) 10V 750mOhm @ 4A, 10V 4.5V @ 100µA 42 nC @ 10 V ±30V 1250 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ24NS

AUIRFZ24NS

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
682 -

RFQ

AUIRFZ24NS

Ficha técnica

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STH140N6F7-2

STH140N6F7-2

MOSFET N-CH 60V 80A H2PAK-2

STMicroelectronics
977 -

RFQ

STH140N6F7-2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VII Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 3mOhm @ 40A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 158W (Tc) 175°C (TJ) Surface Mount
STI18N65M2

STI18N65M2

MOSFET N-CH 650V 12A I2PAK

STMicroelectronics
839 -

RFQ

STI18N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 330mOhm @ 6A, 10V 4V @ 250µA 20 nC @ 10 V ±25V 770 pF @ 100 V - 110W (Tc) 150°C (TJ) Through Hole
IRL3705ZLPBF

IRL3705ZLPBF

MOSFET N-CH 55V 75A TO262

Infineon Technologies
500 -

RFQ

IRL3705ZLPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7707TR

IRF7707TR

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies
2,922 -

RFQ

IRF7707TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7726

IRF7726

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies
2,265 -

RFQ

IRF7726

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V 2.5V @ 250µA 69 nC @ 10 V ±20V 2204 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7805ATR

IRF7805ATR

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
2,559 -

RFQ

IRF7805ATR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807ATR

IRF7807ATR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,000 -

RFQ

IRF7807ATR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VD1

IRF7807VD1

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,325 -

RFQ

IRF7807VD1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807VD1TR

IRF7807VD1TR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,622 -

RFQ

IRF7807VD1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 3V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Record«Prev1... 137138139140141142143144...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario