Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM4NB60CI C0G

TSM4NB60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation
843 -

RFQ

TSM4NB60CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 500 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7453TR

IRF7453TR

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies
3,109 -

RFQ

IRF7453TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7470TR

IRF7470TR

MOSFET N-CH 40V 10A 8SO

Infineon Technologies
2,110 -

RFQ

IRF7470TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 2.8V, 10V 13mOhm @ 10A, 10V 2V @ 250µA 44 nC @ 4.5 V ±12V 3430 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM4NB65CI C0G

TSM4NB65CI C0G

MOSFET N-CH 650V 4A ITO220AB

Taiwan Semiconductor Corporation
841 -

RFQ

TSM4NB65CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3.37Ohm @ 2A, 10V 4.5V @ 250µA 13.46 nC @ 10 V ±30V 549 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7471TR

IRF7471TR

MOSFET N-CH 40V 10A 8SO

Infineon Technologies
3,221 -

RFQ

IRF7471TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 32 nC @ 4.5 V ±20V 2820 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF11N50CF

FQPF11N50CF

MOSFET N-CH 500V 11A TO220F

onsemi
114 -

RFQ

FQPF11N50CF

Ficha técnica

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7477TR

IRF7477TR

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,774 -

RFQ

IRF7477TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STB150N3LH6

STB150N3LH6

MOSFET N CH 30V 80A D2PAK

STMicroelectronics
998 -

RFQ

STB150N3LH6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 3mOhm @ 40A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 3800 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7700TR

IRF7700TR

MOSFET P-CH 20V 8.6A 8TSSOP

Infineon Technologies
3,209 -

RFQ

IRF7700TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8.6A (Tc) 2.5V, 4.5V 15mOhm @ 8.6A, 4.5V 1.2V @ 250µA 89 nC @ 5 V ±12V 4300 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD7N80K5

STD7N80K5

MOSFET N-CH 800V 6A DPAK

STMicroelectronics
2,387 -

RFQ

STD7N80K5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7701TR

IRF7701TR

MOSFET P-CH 12V 10A 8TSSOP

Infineon Technologies
2,722 -

RFQ

IRF7701TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 10A (Tc) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.2V @ 250µA 100 nC @ 4.5 V ±8V 5050 pF @ 10 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9530STRLPBF

IRF9530STRLPBF

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
583 -

RFQ

IRF9530STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7702TR

IRF7702TR

MOSFET P-CH 12V 8A 8TSSOP

Infineon Technologies
3,983 -

RFQ

IRF7702TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 14mOhm @ 8A, 4.5V 1.2V @ 250µA 81 nC @ 4.5 V ±8V 3470 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1N100P

IXTA1N100P

MOSFET N-CH 1000V 1A TO263

IXYS
3,347 -

RFQ

IXTA1N100P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7703TR

IRF7703TR

MOSFET P-CH 40V 6A 8TSSOP

Infineon Technologies
3,751 -

RFQ

IRF7703TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V 3V @ 250µA 62 nC @ 4.5 V ±20V 5220 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STD8N65M5

STD8N65M5

MOSFET N-CH 650V 7A DPAK

STMicroelectronics
2,332 -

RFQ

STD8N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 690 pF @ 100 V - 70W (Tc) 150°C (TJ) Surface Mount
IRF7704TR

IRF7704TR

MOSFET P-CH 40V 4.6A 8TSSOP

Infineon Technologies
2,805 -

RFQ

IRF7704TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Ta) 4.5V, 10V 46mOhm @ 4.6A, 10V 3V @ 250µA 38 nC @ 4.5 V ±20V 3150 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL640STRLPBF

IRL640STRLPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
398 -

RFQ

IRL640STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7705TR

IRF7705TR

MOSFET P-CH 30V 8A 8TSSOP

Infineon Technologies
2,773 -

RFQ

IRF7705TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 2774 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7706TR

IRF7706TR

MOSFET P-CH 30V 7A 8TSSOP

Infineon Technologies
3,448 -

RFQ

IRF7706TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 7A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2211 pF @ 25 V - 1.51W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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