Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
MSC70SM120JCU2

MSC70SM120JCU2

SICFET N-CH 1.2KV 89A SOT227

Microchip Technology
2,335 -

RFQ

MSC70SM120JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 395W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT10021JFLL

APT10021JFLL

MOSFET N-CH 1000V 37A ISOTOP

Microchip Technology
2,663 -

RFQ

APT10021JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC130SM120JCU3

MSC130SM120JCU3

SICFET N-CH 1.2KV 173A SOT227

Microchip Technology
3,996 -

RFQ

MSC130SM120JCU3

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC130SM120JCU2

MSC130SM120JCU2

SICFET N-CH 1.2KV 173A SOT227

Microchip Technology
2,379 -

RFQ

MSC130SM120JCU2

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 173A (Tc) 20V 16mOhm @ 80A, 20V 2.8V @ 2mA 464 nC @ 20 V +25V, -10V 6040 pF @ 1000 V - 745W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT12040JVR

APT12040JVR

MOSFET N-CH 1200V 26A SOT227

Microchip Technology
2,185 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 400mOhm @ 13A, 10V 4V @ 5mA 1200 nC @ 10 V ±30V 18000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VN2450N3-G

VN2450N3-G

MOSFET N-CH 500V 200MA TO92-3

Microchip Technology
741 -

RFQ

VN2450N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tj) 4.5V, 10V 13Ohm @ 400mA, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
VN0606L-G

VN0606L-G

MOSFET N-CH 60V 330MA TO92-3

Microchip Technology
143 -

RFQ

VN0606L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 330mA (Tj) 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP2540N3-G

TP2540N3-G

MOSFET P-CH 400V 86MA TO92-3

Microchip Technology
375 -

RFQ

TP2540N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 400 V 86mA (Tj) 4.5V, 10V 25Ohm @ 100mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
VN0550N3-G

VN0550N3-G

MOSFET N-CH 500V 50MA TO92-3

Microchip Technology
369 -

RFQ

VN0550N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 50mA (Tj) 5V, 10V 60Ohm @ 50mA, 10V 4V @ 1mA - ±20V 55 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN4012L-G

VN4012L-G

MOSFET N-CH 400V 160MA TO92-3

Microchip Technology
804 -

RFQ

VN4012L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 160mA (Tj) 4.5V 12Ohm @ 100mA, 4.5V 1.8V @ 1mA - ±20V 110 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP2450N3-G

VP2450N3-G

MOSFET P-CH 500V 100MA TO92-3

Microchip Technology
328 -

RFQ

VP2450N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 100mA (Tj) 4.5V, 10V 30Ohm @ 100mA, 10V 3.5V @ 1mA - ±20V 190 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
VP0550N3-G

VP0550N3-G

MOSFET P-CH 500V 54MA TO92-3

Microchip Technology
151 -

RFQ

VP0550N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 500 V 54mA (Tj) 5V, 10V 125Ohm @ 10mA, 10V 4.5V @ 1mA - ±20V 70 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30F50B

APT30F50B

MOSFET N-CH 500V 30A TO247

Microchip Technology
2,177 -

RFQ

APT30F50B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 190mOhm @ 14A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 4525 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT37F50B

APT37F50B

MOSFET N-CH 500V 37A TO247

Microchip Technology
2,932 -

RFQ

APT37F50B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 37A (Tc) 10V 150mOhm @ 18A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 5710 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC090SMA070B

MSC090SMA070B

SICFET N-CH 700V TO247-3

Microchip Technology
2,951 -

RFQ

MSC090SMA070B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V - - - - - - - - - -55°C ~ 175°C (TJ) Through Hole
MSC060SMA070B

MSC060SMA070B

SICFET N-CH 700V 39A TO247-3

Microchip Technology
2,037 -

RFQ

MSC060SMA070B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC060SMA070S

MSC060SMA070S

SICFET N-CH 700V 37A D3PAK

Microchip Technology
2,341 -

RFQ

MSC060SMA070S

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT56F50B2

APT56F50B2

MOSFET N-CH 500V 56A T-MAX

Microchip Technology
2,436 -

RFQ

APT56F50B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 56A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 2.5mA 220 nC @ 10 V ±30V 8800 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT47N60BC3G

APT47N60BC3G

MOSFET N-CH 600V 47A TO247

Microchip Technology
3,603 -

RFQ

APT47N60BC3G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 260 nC @ 10 V ±20V 7015 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT47N60SC3G

APT47N60SC3G

MOSFET N-CH 600V 47A D3PAK

Microchip Technology
2,953 -

RFQ

APT47N60SC3G

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 260 nC @ 10 V ±20V 7015 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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