Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APTM120U10SAG

APTM120U10SAG

MOSFET N-CH 1200V 116A SP6

Microchip Technology
3,279 -

RFQ

APTM120U10SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65SAG

APTM100UM65SAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology
2,421 -

RFQ

APTM100UM65SAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
VN0104N3-G

VN0104N3-G

MOSFET N-CH 40V 350MA TO92-3

Microchip Technology
223 -

RFQ

VN0104N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 40 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN0109N3-G

VN0109N3-G

MOSFET N-CH 90V 350MA TO92-3

Microchip Technology
560 -

RFQ

VN0109N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 90 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN0104N3-G

TN0104N3-G

MOSFET N-CH 40V 450MA TO92-3

Microchip Technology
3,576 -

RFQ

TN0104N3-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 40 V 450mA (Ta) 3V, 10V 1.8Ohm @ 1A, 10V 1.6V @ 500µA - ±20V 70 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP0109N3-G

VP0109N3-G

MOSFET P-CH 90V 250MA TO92-3

Microchip Technology
2,116 -

RFQ

VP0109N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 90 V 250mA (Tj) 5V, 10V 8Ohm @ 500mA, 10V 3.5V @ 1mA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
APTM20UM03FAG

APTM20UM03FAG

MOSFET N-CH 200V 580A SP6

Microchip Technology
2,267 -

RFQ

APTM20UM03FAG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 200 V 580A (Tc) 10V 3.6mOhm @ 290A, 10V 5V @ 15mA 840 nC @ 10 V ±30V 43300 pF @ 25 V - 2270W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM10UM01FAG

APTM10UM01FAG

MOSFET N-CH 100V 860A SP6

Microchip Technology
2,074 -

RFQ

APTM10UM01FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 860A (Tc) 10V 1.6mOhm @ 275A, 10V 4V @ 12mA 2100 nC @ 10 V ±30V 60000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM60FAG

APTM100UM60FAG

MOSFET N-CH 1000V 129A SP6

Microchip Technology
3,566 -

RFQ

APTM100UM60FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 129A (Tc) 10V 70mOhm @ 64.5A, 10V 5V @ 15mA 1116 nC @ 10 V ±30V 31100 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70DAG

APTM120UM70DAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology
3,609 -

RFQ

APTM120UM70DAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120U10SCAVG

APTM120U10SCAVG

MOSFET N-CH 1200V 116A SP6

Microchip Technology
3,348 -

RFQ

APTM120U10SCAVG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50UM09FAG

APTM50UM09FAG

MOSFET N-CH 500V 497A SP6

Microchip Technology
3,913 -

RFQ

APTM50UM09FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 497A (Tc) 10V 10mOhm @ 248.5A, 10V 5V @ 30mA 1200 nC @ 10 V ±30V 63300 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65SCAVG

APTM100UM65SCAVG

MOSFET N-CH 1000V 145A SP6

Microchip Technology
3,523 -

RFQ

APTM100UM65SCAVG

Ficha técnica

Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM45FAG

APTM100UM45FAG

MOSFET N-CH 1000V 215A SP6

Microchip Technology
3,873 -

RFQ

APTM100UM45FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 215A (Tc) 10V 52mOhm @ 107.5A, 10V 5V @ 30mA 1602 nC @ 10 V ±30V 42700 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70FAG

APTM120UM70FAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology
2,795 -

RFQ

APTM120UM70FAG

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
DN2535N5-G

DN2535N5-G

MOSFET N-CH 350V 500MA TO220-3

Microchip Technology
426 -

RFQ

DN2535N5-G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 350 V 500mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 15W (Tc) -55°C ~ 150°C (TJ) Through Hole
VP3203N3-G

VP3203N3-G

MOSFET P-CH 30V 650MA TO92-3

Microchip Technology
101 -

RFQ

VP3203N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 30 V 650mA (Tj) 4.5V, 10V 600mOhm @ 3A, 10V 3.5V @ 10mA - ±20V 300 pF @ 25 V - 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
LP0701N3-G

LP0701N3-G

MOSFET P-CH 16.5V 500MA TO92

Microchip Technology
207 -

RFQ

LP0701N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 16.5 V 500mA (Tj) 2V, 5V 1.5Ohm @ 300mA, 5V 1V @ 1mA - ±10V 250 pF @ 15 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN1206L-G

VN1206L-G

MOSFET N-CH 120V 230MA TO92-3

Microchip Technology
3,031 -

RFQ

VN1206L-G

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 120 V 230mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±30V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC025SMA120B4

MSC025SMA120B4

TRANS SJT N-CH 1200V 103A TO247

Microchip Technology
2,025 -

RFQ

MSC025SMA120B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 3mA 232 nC @ 20 V +23V, -10V 3020 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 697 Record«Prev1... 29303132333435Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario