Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT56F60L

APT56F60L

MOSFET N-CH 600V 60A TO264

Microchip Technology
2,412 -

RFQ

APT56F60L

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 110mOhm @ 28A, 10V 5V @ 2.5mA 280 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010B2LLG

APT5010B2LLG

MOSFET N-CH 500V 46A T-MAX

Microchip Technology
3,168 -

RFQ

APT5010B2LLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010LVFRG

APT5010LVFRG

MOSFET N-CH 500V 47A TO264

Microchip Technology
2,491 -

RFQ

APT5010LVFRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) - 100mOhm @ 500mA, 10V 4V @ 2.5mA 470 nC @ 10 V - 8900 pF @ 25 V - - - Through Hole
APT14M100S

APT14M100S

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology
3,593 -

RFQ

APT14M100S

Ficha técnica

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 880mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5024BLLG

APT5024BLLG

MOSFET N-CH 500V 22A TO247

Microchip Technology
2,946 -

RFQ

APT5024BLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1900 pF @ 25 V - 265W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5024BFLLG

APT5024BFLLG

MOSFET N-CH 500V 22A TO247

Microchip Technology
3,285 -

RFQ

APT5024BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) - 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V - 1900 pF @ 25 V - - - Through Hole
APT17F80S

APT17F80S

MOSFET N-CH 800V 18A D3PAK

Microchip Technology
2,608 -

RFQ

APT17F80S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 18A (Tc) 10V 580mOhm @ 9A, 10V 5V @ 1mA 122 nC @ 10 V ±30V 3757 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1003RBLLG

APT1003RBLLG

MOSFET N-CH 1000V 4A TO247

Microchip Technology
2,513 -

RFQ

APT1003RBLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14F100S

APT14F100S

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology
2,731 -

RFQ

APT14F100S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 980mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSC750SMA170SA

MSC750SMA170SA

MOSFET SIC 1700 V 750 MOHM TO-26

Microchip Technology
2,571 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A (Tc) 20V 940mOhm @ 2.5A, 20V 3.25V @ 100µA (Typ) 11 nC @ 20 V +23V, -10V 184 pF @ 1000 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT5024SLLG/TR

APT5024SLLG/TR

MOSFET N-CH 500V 22A D3PAK

Microchip Technology
2,799 -

RFQ

APT5024SLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1900 pF @ 25 V - 265W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT5024SLLG

APT5024SLLG

MOSFET N-CH 500V 22A D3PAK

Microchip Technology
3,252 -

RFQ

APT5024SLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) - 240mOhm @ 11A, 10V 5V @ 1mA 43 nC @ 10 V - 1900 pF @ 25 V - - - Surface Mount
MSC180SMA120SA

MSC180SMA120SA

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology
2,852 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 225mOhm @ 8A, 20V 3.26V @ 500µA 34 nC @ 20 V +23V, -10V 510 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) -
MSC060SMA070SA

MSC060SMA070SA

MOSFET SIC 700 V 60 MOHM TO-263-

Microchip Technology
2,739 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 700 V 37A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC080SMA120SA

MSC080SMA120SA

MOSFET SIC 1200 V 80 MOHM TO-263

Microchip Technology
3,138 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC090SMA070SA

MSC090SMA070SA

MOSFET SIC 700 V 90 MOHM TO-263-

Microchip Technology
3,473 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 25A (Tc) 20V 115mOhm @ 15A, 20V 2.4V @ 750µA 38 nC @ 20 V +23V, -10V 785 pF @ 700 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC360SMA120SA

MSC360SMA120SA

MOSFET SIC 1200 V 360 MOHM TO-26

Microchip Technology
3,951 -

RFQ

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 20V 450mOhm @ 5A, 20V 3.14V @ 250µA 21 nC @ 20 V +23V, -10V 255 pF @ 1000 V - 71W (Tc) -55°C ~ 175°C (TJ) -
APT10M25BVRG

APT10M25BVRG

MOSFET N-CH 100V 75A TO247

Microchip Technology
3,136 -

RFQ

APT10M25BVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 25mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 5160 pF @ 25 V - - - Through Hole
APT1003RSLLG

APT1003RSLLG

MOSFET N-CH 1000V 4A D3PAK

Microchip Technology
3,705 -

RFQ

APT1003RSLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) - 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V - 694 pF @ 25 V - - - Surface Mount
APT5018SLLG/TR

APT5018SLLG/TR

MOSFET N-CH 500V 27A D3PAK

Microchip Technology
2,786 -

RFQ

APT5018SLLG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V ±30V 2596 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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