Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TP65H070LDG-TR

TP65H070LDG-TR

650 V 25 A GAN FET

Transphorm
206 -

RFQ

TP65H070LDG-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TP65H070L Active N-Channel GaNFET (Gallium Nitride) 650 V 25A (Tc) 10V 85mOhm @ 16A, 10V 4.8V @ 700µA 9.3 nC @ 10 V ±20V 600 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP65H150G4PS

TP65H150G4PS

GAN FET N-CH 650V TO-220

Transphorm
2,906 -

RFQ

Tube - Active - - - - - - - - - - - - - -
TPH3206LS

TPH3206LS

GANFET N-CH 600V 17A PQFN

Transphorm
2,822 -

RFQ

TPH3206LS

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 10V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPH3207WS

TPH3207WS

GANFET N-CH 650V 50A TO247-3

Transphorm
3,199 -

RFQ

TPH3207WS

Ficha técnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 50A (Tc) 10V 41mOhm @ 32A, 8V 2.65V @ 700µA 42 nC @ 8 V ±18V 2197 pF @ 400 V - 178W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H035WS

TP65H035WS

GANFET N-CH 650V 46.5A TO247-3

Transphorm
2,364 -

RFQ

TP65H035WS

Ficha técnica

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 46.5A (Tc) 12V 41mOhm @ 30A, 10V 4.8V @ 1mA 36 nC @ 10 V ±20V 1500 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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